VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
1
Cathode
1
2
Anode
2
• Designed and qualified
JEDEC®-JESD 47
according
to
• Fully isolated package (VINS = 2500 VRMS)
• UL pending
2L TO-220 FullPAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
APPLICATIONS
IF(AV)
10 A
VR
200 V, 400 V, 600 V
VF at IF
1.2 V
IFSM
160 A
trr
50 ns
TJ max.
150 °C
Snap factor
0.5
Package
2L TO-220 FullPAK
Circuit configuration
Single
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF0..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
Sinusoidal waveform
IFSM
VALUES
UNITS
200 to 600
V
10
160
A
trr
1 A, 100 A/µs
50
ns
VF
10 A, TJ = 25 °C
1.2
V
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-10ETF02FP-M3
200
300
VS-10ETF04FP-M3
400
500
VS-10ETF06FP-M3
600
700
TJ
VOLTAGE RATINGS
PART NUMBER
3
Revision: 15-Sep-17
Document Number: 96293
1
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VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 98 °C, 180° conduction half sine wave
10
10 ms sine pulse, rated VRRM applied
150
UNITS
A
10 ms sine pulse, no voltage reapplied
160
10 ms sine pulse, rated VRRM applied
112.5
10 ms sine pulse, no voltage reapplied
160
t = 0.1 to 10 ms, no voltage reapplied
1600
A2s
VALUES
UNITS
1.2
V
23.5
m
0.85
V
A2s
ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
Maximum forward voltage drop
VFM
rt
Forward slope resistance
VF(TO)
Threshold voltage
Maximum reverse leakage current
IRM
TEST CONDITIONS
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
0.1
VR = Rated VRRM
TJ = 150 °C
mA
3.0
RECOVERY CHARACTERISTICS
SYMBOL
PARAMETER
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
S
Snap factor
VALUES
UNITS
200
ns
2.75
A
0.32
μC
IFM
trr
t
dir
dt
0.6
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance
junction to case
RthJC
Maximum thermal resistance
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
2.5
°C/W
62
Mounting surface, smooth, and greased
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style 2L TO-220 FullPAK
10ETF02FP
10ETF04FP
10ETF06FP
Revision: 15-Sep-17
Document Number: 96293
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
Vishay Semiconductors
150
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction angle
120
110
100
90
30°
60°
90° 120°
180°
80
0
2
6
4
10
8
12
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable CaseTemperature (°C)
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20
130
Ø
Conduction period
120
110
100
DC
90
0
2
4
8
6
10
12
14
16
18
DC
30°
RMS limit
12
8
Ø
4
Conduction period
0
4
0
8
12
16
Average Forward Current (A)
160
At any rated load condition and with
rated VRRM applied following surge.
140
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
120
100
80
60
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
120°
14
90°
60°
12
180°
30°
RMS limit
8
6
Ø
4
Conduction angle
2
TJ = 150 °C
0
0
180°
Average Forward Current (A)
16
10
Peak Half Sine Wave Forward Current (A)
140
2
4
6
8
10
Peak Half Sine Wave Forward Current (A)
Maximum Allowable CaseTemperature (°C)
Maximum Average ForwardPower Loss (W)
RthJC (DC) = 2.5 °C/W
180°
120°
Fig. 4 - Forward Power Loss Characteristics
150
90° 120°
60°
16
Fig. 1 - Current Rating Characteristics
30° 60°
90°
TJ = 150 °C
180
160
Maximum non-repetitive surge current
vs. pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
140
120
100
80
60
40
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 15-Sep-17
Document Number: 96293
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
Vishay Semiconductors
100
TJ = 150 °C
TJ = 25 °C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Qrr - Typical Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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0.4
TJ = 25 °C
0.3
I FM = 20 A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
TJ = 150 °C
0.3
IFM = 20 A
0.2
IFM = 10 A
IFM = 5 A
0.1
IFM = 2 A
IFM = 1 A
0
0
40
80
120
160
200
IFM = 20 A
1.0
IFM = 10 A
0.8
0.6
IFM = 5 A
0.4
IFM = 2 A
0.2
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
2.5
TJ = 150 °C
IFM = 20 A
2.0
IFM = 10 A
1.5
IFM = 5 A
1.0
IFM = 2 A
0.5
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Irr - Typical Reverse Recovery Current (A)
trr - Typical Reverse Recovery Time (µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
0.4
TJ = 25 °C
1.2
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Typical Reverse Recovery Charge (µC)
trr - Typical Reverse Recovery Time (µs)
Fig. 7 - Forward Voltage Drop Characteristics
1.4
15
TJ = 25 °C
IFM = 20 A
12
IFM = 10 A
IFM = 5 A
9
IFM = 2 A
6
IFM = 1 A
3
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 15-Sep-17
Document Number: 96293
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
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Irr - Typical Reverse Recovery Current (A)
Vishay Semiconductors
20
TJ = 150 °C
IFM = 20 A
16
IFM = 10 A
IFM = 5 A
12
IFM = 2 A
8
IFM = 1 A
4
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 15-Sep-17
Document Number: 96293
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
F
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
T = TO-220
5
-
Type of silicon:
F = fast soft recovery rectifier
02 = 200 V
04 = 400 V
06 = 600 V
6
-
7
-
FullPAK
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Voltage code x 100 = VRRM
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-10ETF02FP-M3
50
1000
Antistatic plastic tubes
VS-10ETF04FP-M3
50
1000
Antistatic plastic tubes
VS-10ETF06FP-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96157
Part marking information
www.vishay.com/doc?95392
Revision: 15-Sep-17
Document Number: 96293
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
2L TO-220 FullPAK
DIMENSIONS in millimeters
3.40
Hole Ø 3.10
10.6
10.0
3.7
3.2
2.80
2.44
7.31
6.50
16.0
15.8
Mold flash bleeding
3.3
3.1
Exposed Cu
13.56
12.90
2.54 TYP.
0.61
0.38
0.9
0.7
2.85
2.65
1.20
1.47
1.30
1.05
2.54 TYP.
Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
5° ± 0.5°
Revision: 06-Jul-17
Document Number: 96157
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
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