VS-10ETF06SLHM3
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Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
Base
cathode
+
2
• Glass passivated pellet chip junction
• AEC-Q101 qualified
2
• Meets JESD 201 class 1A whisker test
3
1
D2PAK (TO-263AB)
1
Anode -
• Flexible solution
rectification
3
- Anode
for
reliable
AC
power
• High surge, low VF rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
10 A
APPLICATIONS
VR
600 V
• Input rectification
VF at IF
1.2 V
• On-board and off-board EV / HEV battery chargers
IFSM
140 A
trr
50 ns
DESCRIPTION
TJ max.
150 °C
Snap factor
0.6
Package
D2PAK (TO-263AB)
Circuit configuration
Single
The VS-10ETF06SLHM3 fast soft recovery rectifier series
has been optimized for combined short reverse recovery
time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
600
V
VRRM
IF(AV)
Sinusoidal waveform
10
A
140
IFSM
trr
1 A, 100 A/μs
50
VF
10 A, TJ = 25 °C
1.2
V
TJ
Range
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
600
700
2.5
ns
VOLTAGE RATINGS
PART NUMBER
VS-10ETF06SLHM3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 128 °C, 180° conduction half sine wave
10
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied
115
10 ms sine pulse, no voltage reapplied
140
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
66
10 ms sine pulse, no voltage reapplied
94
t = 0.1 ms to 10 ms, no voltage reapplied
940
UNITS
A
A2s
A2s
Revision: 22-Feb-18
Document Number: 96485
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF06SLHM3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
VALUES
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
UNITS
1.2
V
12.7
m
1.25
V
0.1
mA
2.5
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
S
VALUES
UNITS
200
ns
2.75
A
0.32
μC
IFM
trr
t
dir
dt
Qrr
IRM(REC)
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
UNITS
-40 to +150
°C
1.5
°C/W
RthJA (1)
40
Approximate weight
Marking device
VALUES
Case style D2PAK (TO-263AB)
2
g
0.07
oz.
10ETF06SH
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
Revision: 22-Feb-18
Document Number: 96485
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF06SLHM3
Vishay Semiconductors
150
RthJC (DC) = 1.5 °C/W
145
140
Ø
Conduction angle
135
130
120°
125
30°
60°
90°
6
8
180°
120
0
2
4
10
12
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
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20
140
Ø
Conduction period
135
DC
30°
120°
90°
180°
120
0
2
4
6
8
10
12
14
16
DC
30°
RMS limit
12
8
Ø
4
Conduction period
0
4
0
8
12
16
Average Forward Current (A)
130
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
120
110
100
90
80
70
60
50
40
30
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
120°
14
90°
60°
12
180°
30°
RMS limit
8
6
Ø
4
Conduction angle
2
TJ = 150 °C
0
0
180°
Number of Equal Amplitude Half Cycle
Current Pulses (N)
16
10
Peak Half Sine Wave Forward Current (A)
145
2
4
6
8
10
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Average Forward Power Loss (W)
RthJC (DC) = 1.5 °C/W
125
120°
Fig. 4 - Forward Power Loss Characteristics
150
60°
60°
16
Fig. 1 - Current Rating Characteristics
130
90°
TJ = 150 °C
150
130
110
Maximum non-repetitive surge current
vs. pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
90
70
50
30
10
0.01
0.1
1
10
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 22-Feb-18
Document Number: 96485
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF06SLHM3
Vishay Semiconductors
100
TJ = 150 °C
TJ = 25 °C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Qrr - Typiacl Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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TJ = 25 °C
0.30
IFM = 20 A
IFM = 10 A
IFM = 8 A
0.20
IFM = 5 A
0.10
IFM = 2 A
IFM = 1 A
0
0
40
80
120
160
200
Irr - Typiacl Reverse Recovery Current (A)
0.40
TJ = 25 °C
IFM = 20 A
1.2
1.0
IFM = 10 A
0.8
0.6
IFM = 5 A
0.4
IFM = 2 A
0.2
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
15
TJ = 25 °C
IFM = 20 A
12
IFM = 10 A
IFM = 5 A
9
IFM = 2 A
6
IFM = 1 A
3
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.4
TJ = 150 °C
0.3
IFM = 20 A
0.2
IFM = 10 A
IFM = 5 A
0.1
IFM = 2 A
IFM = 1 A
0
0
40
80
120
160
200
Irr - Typiacl Reverse Recovery Current (A)
trr - Typiacl Reverse Recovery Time (µs)
trr - Typiacl Reverse Recovery Time (µs)
Fig. 7 - Forward Voltage Drop Characteristics
1.4
15
TJ = 25 °C
IFM = 20 A
12
IFM = 10 A
IFM = 5 A
9
IFM = 2 A
6
IFM = 1 A
3
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 22-Feb-18
Document Number: 96485
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF06SLHM3
Irr - Typiacl Reverse Recovery Current (A)
www.vishay.com
Vishay Semiconductors
20
TJ = 150 °C
IFM = 20 A
16
IFM = 10 A
12
IFM = 5 A
IFM = 2 A
8
IFM = 1 A
4
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
1
Steady state value
(DC operation)
0.1
0.01
Single pulse
0.001
0.001
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 22-Feb-18
Document Number: 96485
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF06SLHM3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
F
06
S
L
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
E = single
4
-
Package:
T = D2PAK (TO-263AB)
5
-
Type of silicon:
F = fast soft recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
L = tape and reel (left oriented), for different orientation,
contact factory
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
06 = 600 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10ETF06SLHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96317
Revision: 22-Feb-18
Document Number: 96485
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
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Document Number: 91000
