VS-10ETF10S-M3

VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Glass passivated pellet chip junction Base cathode + 2 • Meets MSL level 1, per LF maximum peak of 245 °C • Designed and qualified JEDEC®-JESD 47 2 1 3 D2PAK (TO-263AB) 1 Anode - J-STD-020, according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 - Anode APPLICATIONS • Output rectification and choppers and converters PRIMARY CHARACTERISTICS IF(AV) 10 A VR 1000 V, 1200 V VF at IF 1.33 V IFSM 155 A trr 80 ns TJ max. 150 °C freewheeling • Input rectifications where severe conducted EMI should be met in inverters, restrictions on DESCRIPTION The VS-10ETF..S-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Snap factor 0.6 Package D2PAK (TO-263AB) Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 10 A Sinusoidal waveform VRRM 1000, 1200 V IFSM 155 A VF 10 A, TJ = 25 °C trr 1 A, 100 A/μs TJ Range 1.33 V 80 ns -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-10ETF10S-M3 1000 1100 VS-10ETF12S-M3 1200 1300 VOLTAGE RATINGS PART NUMBER 4 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 125 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 130 10 ms sine pulse, no voltage reapplied 155 10 ms sine pulse, rated VRRM applied 85 10 ms sine pulse, no voltage reapplied 120 t = 0.1 ms to 10 ms, no voltage reapplied 1200 UNITS A A2s A2√s Revision: 16-Dec-2021 Document Number: 94885 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = rated VRRM TJ = 150 °C UNITS 1.33 V 22.9 mΩ 0.96 V 0.1 mA 4 RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C VALUES UNITS 310 ns 4.7 A μC Reverse recovery current Irr Reverse recovery charge Qrr 1.05 S 0.6 Typical snap factor IFM trr t dir dt Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS -40 to +150 °C 1.5 °C/W RthJA (1) 62 Approximate weight Marking device VALUES Case style D2PAK (TO-263AB) 2 g 0.07 oz. 10ETF10S 10ETF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 16-Dec-2021 Document Number: 94885 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors 24 10ETF.. Series RthJC (DC) = 1.5 °C/W 145 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 Ø Conduction angle 135 130 125 120 115 12 RMS limit Ø 8 Conduction period 4 10ETF.. Series TJ = 150 °C 0 0 2 4 10 8 6 2 0 12 4 6 8 12 10 16 14 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 140 10ETF.. Series RthJC (DC) = 1.5 °C/W 145 140 Ø 135 Conduction period 130 30° 60° 125 90° 120 8 6 100 90 80 70 60 10 VS-10ETF..S Series 30 115 4 110 40 DC 180° 2 120 50 120° 0 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150°C at 60 Hz 0.0083s at 50 Hz 0.0100s 130 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 16 60° 90° 120° 180° 30° 12 14 16 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 170 16 180° 120° 90° 60° 30° 14 12 150 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 20 10 RMS limit 8 6 Ø Conduction angle 4 10ETF.. Series TJ = 150 °C 2 2 4 6 8 110 90 70 50 30 0 0 130 10 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 10 0.01 VS-10ETF..S Series 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 16-Dec-2021 Document Number: 94885 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF10S-M3, VS-10ETF12S-M3 Series Vishay Semiconductors 1000 2.0 10ETF.. Series TJ = 25 °C TJ = 150 °C TJ = 25 °C Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com 100 10 1 0.5 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 5 10ETF.. Series TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) 10ETF.. Series TJ = 25 °C 0.5 trr - Typical Reverse Recovery Time (µs) 1.6 10ETF.. Series 0.6 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.3 0.2 0.1 0 IFM = 10 A 4 IFM = 8 A 3 IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.8 20 10ETF.. Series TJ = 25 °C 0.6 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C trr - Typical Reverse Recovery Time (µs) IFM = 10 A IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.2 0 IFM = 10 A 16 IFM = 8 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 16-Dec-2021 Document Number: 94885 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors 25 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C IFM = 10 A 20 IFM = 8 A 15 IFM = 5 A IFM = 2 A 10 IFM = 1 A 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 0.1 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 10ETF.. Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 16-Dec-2021 Document Number: 94885 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T F 12 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: TRL -M3 8 9 E = single 4 - Package: T = D2PAK (TO-263AB) 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - 10 = 1000 V 12 = 1200 V None = tube TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-10ETF10S-M3 50 Antistatic plastic tubes VS-10ETF10STRR-M3 800 13" diameter reel VS-10ETF10STRL-M3 800 13" diameter reel VS-10ETF12S-M3 50 Antistatic plastic tubes VS-10ETF12STRR-M3 800 13" diameter reel VS-10ETF12STRL-M3 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision: 16-Dec-2021 Document Number: 94885 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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