VS-10ETF10FP-M3, VS-10ETF12FP-M3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
1
Cathode
1
2
Anode
• Designed and qualified
JEDEC®-JESD 47
according
to
• Fully isolated package (VINS = 2500 VRMS)
• UL pending
2
2L TO-220 FullPAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VR
1000 V, 1200 V
VF at IF
1.33 V
IFSM
140 A
trr
80 ns
TJ max.
150 °C
Snap factor
0.6
Package
2L TO-220 FullPAK
Circuit configuration
Single
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF1..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
Sinusoidal waveform
IFSM
VALUES
UNITS
1000, 1200
V
10
140
trr
1 A, 100 A/µs
VF
10 A, TJ = 25 °C
80
A
ns
1.33
V
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-10ETF10FP-M3
1000
1100
VS-10ETF12FP-M3
1200
1300
TJ
VOLTAGE RATINGS
PART NUMBER
4
Revision: 15-Sep-17
Document Number: 96294
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VS-10ETF10FP-M3, VS-10ETF12FP-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 95 °C, 180° conduction half sine wave
10
10 ms sine pulse, rated VRRM applied
115
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
VALUES
UNITS
A
10 ms sine pulse, no voltage reapplied
140
10 ms sine pulse, rated VRRM applied
66
10 ms sine pulse, no voltage reapplied
94
t = 0.1 to 10 ms, no voltage reapplied
940
A2s
VALUES
UNITS
A2s
ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
Maximum forward voltage drop
VFM
rt
Forward slope resistance
VF(TO)
Threshold voltage
Maximum reverse leakage current
IRM
TEST CONDITIONS
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
m
0.96
V
0.1
VR = Rated VRRM
TJ = 150 °C
1.33
22.9
mA
4
RECOVERY CHARACTERISTICS
SYMBOL
PARAMETER
trr
Reverse recovery time
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
VALUES
UNITS
310
ns
4.7
A
μC
Reverse recovery current
Irr
Reverse recovery charge
Qrr
1.05
S
0.6
Snap factor
IFM
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance
junction to case
RthJC
Maximum thermal resistance
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
DC operation
Marking device
UNITS
-40 to +150
°C
2.5
62
Mounting surface, smooth, and greased
°C/W
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style 2L TO-220 FullPAK
10ETF10FP
10ETF12FP
Revision: 15-Sep-17
Document Number: 96294
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF10FP-M3, VS-10ETF12FP-M3
Vishay Semiconductors
150
RthJC(DC) = 2.5 °C/W
140
130
Ø
120
Conduction angle
110
100
90
60°
80
120°
180°
30°
90°
70
0
2
4
6
8
10
12
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
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24
20
16
12
130
Ø
Conduction period
110
100
30°
120°
DC
60°
180°
90°
70
0
2
4
6
8
10
12
14
16
18
4
0
0
2
4
6
8
10
12
16
14
Average Forward Current (A)
130
At any rated load condition and with
rated VRRM applied following surge.
Initial Tj = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
120
110
100
90
80
70
60
50
40
30
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
180°
120°
90°
60°
30°
14
12
10
RMS limit
6
Ø
Conduction angle
4
TJ = 150 °C
2
0
0
TJ = 150 °C
Average Forward Current (A)
16
8
Peak Half Sine Wave Forward Current (A)
140
2
4
6
8
10
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Average Forward Power Loss (W)
RthJC(DC) = 2.5 °C/W
80
Ø
Conduction period
Fig. 4 - Forward Power Loss Characteristics
150
90
RMS limit
8
Fig. 1 - Current Rating Characteristics
120
DC
180°
120°
90°
60°
30°
140
120
100
Maximum non-repetitive surge current
vs. pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated VRRM reapplied
80
60
40
20
0
0.01
0.1
1
10
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 15-Sep-17
Document Number: 96294
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF10FP-M3, VS-10ETF12FP-M3
Vishay Semiconductors
1000
TJ = 150 °C
TJ = 25 °C
100
10
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Qrr - Typical Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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0.6
TJ = 25 °C
0.5
IFM = 1 A
IFM = 2 A
IFM = 5 A
IFM = 8 A
IFM = 10 A
0.4
0.3
0.2
0.1
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
TJ = 150 °C
0.6
IFM = 1 A
IFM = 2 A
IFM = 5 A
IFM = 8 A
IFM = 10 A
0.4
0.2
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
IFM = 10 A
1.6
IFM = 8 A
1.2
IFM = 5 A
0.8
IFM = 2 A
0.4
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
5
TJ = 150 °C
IFM = 10 A
4
IFM = 8 A
3
IFM = 5 A
2
IFM = 2 A
1
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Irr - Typical Reverse Recovery Current (A)
trr - Typical Reverse Recovery Time (µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
0.8
TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Typical Reverse Recovery Charge (µC)
trr - Typical Reverse Recovery Time (µs)
Fig. 7 - Forward Voltage Drop Characteristics
2.0
20
TJ = 25 °C
IFM = 10 A
16
IFM = 8 A
12
IFM = 5 A
8
IFM = 2 A
IFM = 1 A
4
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 15-Sep-17
Document Number: 96294
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF10FP-M3, VS-10ETF12FP-M3
www.vishay.com
Irr - Typical Reverse Recovery Current (A)
Vishay Semiconductors
25
TJ = 150 °C
IFM = 10 A
20
IFM = 8 A
15
IFM = 5 A
IFM = 2 A
10
IFM = 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
1
10ETF.. Series
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 15-Sep-17
Document Number: 96294
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF10FP-M3, VS-10ETF12FP-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
F
12
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
4
-
E = single diode
Package:
T = TO-220
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
FullPAK
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
F = fast soft recovery rectifier
02 = 200 V
04 = 400 V
06 = 600 V
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-10ETF10FP-M3
50
1000
Antistatic plastic tubes
VS-10ETF12FP-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96157
Part marking information
www.vishay.com/doc?95392
Revision: 15-Sep-17
Document Number: 96294
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
2L TO-220 FullPAK
DIMENSIONS in millimeters
3.40
Hole Ø 3.10
10.6
10.0
3.7
3.2
2.80
2.44
7.31
6.50
16.0
15.8
Mold flash bleeding
3.3
3.1
Exposed Cu
13.56
12.90
2.54 TYP.
0.61
0.38
0.9
0.7
2.85
2.65
1.20
1.47
1.30
1.05
2.54 TYP.
Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
5° ± 0.5°
Revision: 06-Jul-17
Document Number: 96157
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Revision: 01-Jan-2022
1
Document Number: 91000
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VS-10ETF12FP-M3 VS-10ETF10FP-M3
