VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series
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Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 10 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Base
cathode
2
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
2
1
1
Anode
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
D2PAK (TO-263AB)
APPLICATIONS
• Input rectification
PRIMARY CHARACTERISTICS
• Vishay switches and output rectifiers which are available
in identical package outlines
IF(AV)
10 A
VR
800 V, 1000 V, 1200 V
VF at IF
1.1 V
IFSM
160 A
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
DESCRIPTION
The VS-10ETS..S-M3 rectifier series has been optimized for
very low forward voltage drop, with moderate leakage. The
glass passivation technology used has reliable operation up
to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
12.0
16.0
A
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
10
A
VRRM
800 to 1200
V
IFSM
160
A
1.1
V
-40 to +150
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VF
10 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VS-10ETS08S-M3
800
900
VS-10ETS10S-M3
1000
1100
VS-10ETS12S-M3
1200
1300
0.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
10
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied
135
10 ms sine pulse, no voltage reapplied
160
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
10 ms sine pulse, rated VRRM applied
91
10 ms sine pulse, no voltage reapplied
130
t = 0.1 ms to 10 ms, no voltage reapplied
1290
UNITS
A
A2s
A2√s
Revision: 16-Dec-2021
Document Number: 94888
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
20
mΩ
0.82
V
0.05
VR = rated VRRM
TJ = 150 °C
UNITS
1.1
mA
0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
TEST CONDITIONS
TJ, TStg
RthJC
VALUES
UNITS
-40 to +150
°C
DC operation
2.5
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount)
RthJA (1)
62
Approximate weight
2
g
0.07
oz.
10ETS08S
Case style D2PAK (TO-263AB)
Marking device
10ETS10S
10ETS12S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
150
Maximum Allowable
Case Temperature (°C)
140
Maximum Allowable
Case Temperature (°C)
150
10ETS.. Series
RthJC (DC) = 2.5 °C/W
130
Ø
Conduction angle
120
110
100
30°
60°
90
90°
120°
10ETS.. Series
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction period
120
110
30°
60°
100
90°
120°
180°
80
180°
DC
90
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
18
Revision: 16-Dec-2021
Document Number: 94888
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series
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150
16
180°
120°
90°
60°
30°
14
12
130
10
RMS limit
8
6
Ø
4
Conduction angle
2
10ETS.. Series
TJ = 150 °C
120
110
100
90
80
70
60
50
VS-10ETS..S Series
40
30
0
0
2
4
6
8
1
10
10
100
Average Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
170
20
DC
180°
120°
90°
60°
30°
16
14
12
RMS limit
10
8
6
Ø
Conduction period
10ETS.. Series
TJ = 150 °C
4
2
2
4
6
8
10
12
14
130
110
90
70
50
30
VS-10ETS..S Series
10
0.01
0
0
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
150
Peak Half Sine Wave
Forward Current (A)
18
Maximum Average
Forward Power Loss (W)
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
140
Peak Half Sine Wave
Forward Current (A)
Maximum Average
Forward Power Loss (W)
Vishay Semiconductors
16
0.1
1
10
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Average Forward Current (A)
100
TJ = 25 °C
TJ = 150 °C
10
10ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 16-Dec-2021
Document Number: 94888
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ZthJC - Transient
Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
10ETS.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
S
12
S
1
2
3
4
5
6
7
1
-
Vishay Semicondutors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
4
-
Package:
TRL -M3
8
9
E = single
T = D2PAK (TO-263AB)
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
08 = 800 V
10 = 1000 V
12 = 1200 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Revision: 16-Dec-2021
Document Number: 94888
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-10ETS08S-M3
50
Antistatic plastic tube
VS-10ETS08STRR-M3
800
13" diameter reel
VS-10ETS08STRL-M3
800
13" diameter reel
VS-10ETS10S-M3
50
Antistatic plastic tube
VS-10ETS10STRR-M3
800
13" diameter reel
VS-10ETS10STRL-M3
800
13" diameter reel
VS-10ETS12S-M3
50
Antistatic plastic tube
VS-10ETS12STRR-M3
800
13" diameter reel
VS-10ETS12STRL-M3
800
13" diameter reel
VS-10ETS08S-M3
50
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 16-Dec-2021
Document Number: 94888
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
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Document Number: 91000