VS-10MQ060NTRPBF

VS-10MQ060NTRPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term reliability SMA (DO-214AC) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified for industrial level PRODUCT SUMMARY Package SMA (DO-214AC) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 1A VR 60 V DESCRIPTION VF at IF 0.63 IRM 7.5 mA at 125 °C The VS-10MQ060NTRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. TJ max. 150 °C Diode variation Single EAS 2.0 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS Rectangular waveform 1 A 60 V IFSM tp = 5 μs sine 40 A VF 1.5 Apk, TJ = 125 °C TJ Range IF(AV) CHARACTERISTICS VRRM 0.63 V -55 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-10MQ060NTRPbF UNITS 60 V VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES 50 % duty cycle at TL = 120 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5 50 % duty cycle at TL = 129 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1 5 μs sine or 3 μs rect. pulse 40 UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 4 mH 2.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A A 10 Revision: 17-May-17 Document Number: 94118 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ060NTRPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 1.5 A 1A TJ = 125 °C 1.5 A Maximum reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.63 0.71 V 0.57 0.63 0.5 mA 7.5 0.45 V 86.8 mΩ 31 pF 2.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C 80 °C/W 0.07 g Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS DC operation Approximate weight Marking device 0.002 Case style SMA (DO-214AC) (similar D-64) oz. 1H Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 17-May-17 Document Number: 94118 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ060NTRPbF Vishay Semiconductors Allowable Case Temperature (°C) 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.2 150 140 DC 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 100 90 Square wave (D = 0.50) 80 % rated VR applied 80 See note (1) 70 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 0.4 0.8 1.2 1.6 2.0 2.4 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 100 1.4 10 1.2 Average Power Loss (W) IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit 0.8 DC 0.6 0.4 0.2 0 0.0001 0 10 20 30 40 50 60 0 0.4 0.8 1.2 1.6 2.0 2.4 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 10 20 30 40 50 60 IFSM - Non-Repetitive Surge Current (A) VR - Reverse Voltage (V) 100 10 At any rated load condition and with rated VRRM applied following surge 1 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 17-May-17 Document Number: 94118 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ060NTRPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 M Q 060 N TR PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (10 = 1 A) 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (060 = 60 V) 6 - N = new SMA 7 - TR = tape and reel 8 - PbF = lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-10MQ060NTRPbF PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 17-May-17 Document Number: 94118 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMA DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode band Mounting Pad Layout 0.074 (1.88) MAX. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 95400 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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