VS-10MQ100-M3/5AT

VS-10MQ100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low forward voltage drop Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Halogen-free according to IEC 61249-2-21 definition • Small foot print, surface mountable DO-214AC (SMA) • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRODUCT SUMMARY Package DO-214AC (SMA) IF(AV) 1A • Compliant to RoHS Directive 2002/95/EC VR 100 V DESCRIPTION VF at IF 0.63 V The VS-10MQ100-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. IRM 1 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 1.0 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS DC VRRM 1 A 100 V IFSM tp = 5 μs sine 120 A VF 1.5 Apk, TJ = 125 °C 0.68 V TJ Range - 55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-10MQ100-M3 UNITS 100 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 SYMBOL IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 126 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5 50 % duty cycle at TL = 135 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1 UNITS A Maximum peak one cycle non-repetitive surge current, TJ = 25 °C See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Revision: 12-Oct-11 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 120 30 Document Number: 93365 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 1.5 A 1A TJ = 125 °C 1.5 A Maximum reverse leakage current See fig. 2 Threshold voltage IRM VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.78 0.85 V 0.63 0.68 0.1 mA 1 0.52 V 78.4 m 38 pF 2.0 nH 10 000 V/μs VALUES UNITS - 55 to 150 °C 80 °C/W 0.07 g Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS DC operation Approximate weight Marking device 0.002 Case style SMA (similar D-64) oz. 1J Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 12-Oct-11 Document Number: 93365 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ100-M3 www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.4 150 140 130 120 110 Square wave (D = 0.50) 80 % rated VR applied 100 See note (1) 90 0.6 0.8 1.0 1.2 1.4 1.6 0 0.8 1.2 1.6 2.0 2.4 IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 1.6 TJ = 150 °C TJ = 125 °C 0.1 Average Power Loss (W) IR - Reverse Current (mA) 0.4 VFM - Forward Voltage Drop (V) 1 TJ = 100 °C 0.01 TJ = 75 °C 0.001 TJ = 50 °C 0.0001 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.4 1.2 1.0 RMS limit 0.8 0.6 DC 0.4 0.2 TJ = 25 °C 0 0 0 20 40 60 80 100 0 VR - Reverse Voltage (V) TJ = 25 °C 10 1 20 40 60 80 0.8 1.2 1.6 2.0 2.4 Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage IFSM - Non-Repetitive Surge Current (A) 100 0 0.4 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 TJ = 25 °C At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 12-Oct-11 Document Number: 93365 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10MQ100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 M Q 100 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (100 = 100 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-10MQ100-M3/5AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 12-Oct-11 Document Number: 93365 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMA DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode band Mounting Pad Layout 0.074 (1.88) MAX. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 95400 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000