VS-10TQ045HN3

VS-10TQ035HN3, VS-10TQ040HN3, VS10TQ045HN3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation 2 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 TO-220AC 1 Cathode 1 3 Anode • Guard ring for enhanced ruggedness and long term reliability • Meet JESD 201 class 2 whisker test • AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) 10 A VR 35 V, 40 V, 45 V VF at IF 0.49 V IRM 15 mA at 125 °C TJ max. 175 °C EAS 13 mJ Package TO-220AC Circuit configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-10TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.  MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS Rectangular waveform VRRM 10 A 35/45 V IFSM tp = 5 μs sine 1050 A VF 10 Apk, TJ = 125 °C 0.49 V TJ Range -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-10TQ035HN3 VS-10TQ040HN3 VS-10TQ045HN3 UNITS 35 40 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current  See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 6.5 mH 13 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Repetitive avalanche current 50 % duty cycle at TC = 151 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 10 1050 A 280 Revision: 22-Sep-17 Document Number: 96381 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TQ035HN3, VS-10TQ040HN3, VS10TQ045HN3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 10 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 20 A 10 A TJ = 125 °C 20 A Maximum reverse leakage current See fig. 2 IRM (1) Maximum junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.57 0.67 V 0.49 0.61 2 mA 15 900 pF 8.0 nH 10 000 V/μs VALUES UNITS -55 to +175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation See fig. 4 2.0 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.50 Approximate weight Mounting torque °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf. cm (lbfin) 10TQ035H Marking device Case style TO-220AC 10TQ040H 10TQ045H Revision: 22-Sep-17 Document Number: 96381 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TQ035HN3, VS-10TQ040HN3, VS10TQ045HN3 www.vishay.com Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.1 100 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 10 5 VFM - Forward Voltage Drop (V) 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 40 30 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.0001 0.001 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Sep-17 Document Number: 96381 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TQ035HN3, VS-10TQ040HN3, VS10TQ045HN3 www.vishay.com Vishay Semiconductors 8 10TQ RthJC (DC) = 2.0 °C/W 175 170 DC 165 160 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 7 Average Power Loss (W) Allowable Case Temperature (°C) 180 6 5 RMS limit 4 3 DC 2 1 0 155 0 5 10 5 0 15 10 15 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Revision: 22-Sep-17 Document Number: 96381 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TQ035HN3, VS-10TQ040HN3, VS10TQ045HN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 T Q 045 H N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Package: T = TO-220 4 - Schottky “Q” series 5 - Voltage ratings 6 - H = AEC-Q101 qualified 7 - Environmental digit 035 = 35 V 040 = 40 V 045 = 45 V N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10TQ035HN3 50 1000 Antistatic plastic tube VS-10TQ040HN3 50 1000 Antistatic plastic tube VS-10TQ045HN3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95221 Part marking information www.vishay.com/doc?95068 Revision: 22-Sep-17 Document Number: 96381 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 2 3 D D A L1 E A1 (6) H1 (7) (6) D 1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 3 Lead tip L3 C E1 (6) L4 L c e1 A Conforms to JEDEC® outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6 A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7 A2 2.56 2.92 0.101 0.115 e1 4.88 5.28 0.192 0.208 b 0.69 1.01 0.027 0.040 H1 5.84 6.86 0.230 0.270 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552 L1 3.32 3.82 0.131 0.150 4 L3 1.78 2.13 0.070 0.084 c 0.36 0.61 0.014 0.024 L4 0.76 1.27 0.030 0.050 c1 0.36 0.56 0.014 0.022 4 ØP 3.54 3.73 0.139 0.147 3 Q 2.60 3.00 0.102 0.118 D 14.85 15.25 0.585 0.600 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 6, 7 2 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Revision: 09-Sep-2019 Document Number: 95221 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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