VS-111RKI120M

VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES • High current and high surge ratings • Hermetic ceramic housing • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-94 (TO-209AC) TYPICAL APPLICATIONS • DC motor controls PRIMARY CHARACTERISTICS • Controlled DC power supplies IT(AV) 110 A VDRM/VRRM 400 V, 800 V, 1200 V VTM 1.57 V IGT 80 mA TJ -40 °C to +140 °C Package TO-94 (TO-209AC) Circuit configuration Single SCR • AC controllers      MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 110 A 90 °C 172 ITSM I2t 50 Hz 2080 60 Hz 2180 50 Hz 21.7 60 Hz 19.8 VDRM/VRRM tq Typical TJ A kA2s 400 to 1200 V 110 μs -40 to +140 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-110RKI VS-111RKI VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 120 1200 1300 20 Revision: 24-Jan-18 Document Number: 94379 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave Maximum I2t for fusing I2t A 90 °C 172 t = 10 ms No voltage reapplied 2080 100 % VRRM  reapplied 1750 t = 8.3 ms t = 10 ms t = 10 ms I2t UNITS 110 DC at 83 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 2180 Sinusoidal half wave, initial TJ = TJ maximum 1830 21.7 t = 8.3 ms No voltage reapplied t = 10 ms 100 % VRRM  15.3 t = 8.3 ms reapplied 14.0 19.8 t = 0.1 ms to 10 ms, no voltage reapplied 217 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.82 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.02 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 2.16 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 1.70 Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 Maximum on-state voltage VTM Maximum holding current IH Typical latching current IL TJ = 25 °C, anode supply 6 V resistive load A 200 400 kA2s kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs VR = 50 V, dV/dt = 20 V/μs, gate 0 V 25  VALUES UNITS 300 A/μs 1 μs 110 BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of  off-state voltage dV/dt Maximum peak reverse and  off-state leakage current IRRM, IDRM TEST CONDITIONS VALUES UNITS TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs TJ = TJ maximum rated VDRM/VRRM applied 20 mA Revision: 24-Jan-18 Document Number: 94379 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp  5 ms 12 TJ = TJ maximum, f = 50 Hz, d% = 50 3.0 IGT TJ = 25 °C TJ = 25 °C TJ = 140 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD A 20 Maximum required gate trigger/current/voltage are the lowest value which will  trigger all units 12 V anode to cathode applied TJ = - 40 °C VGT W V 10 TJ = 140 °C DC gate voltage required to trigger UNITS 3.0 TJ = TJ maximum, tp  5 ms TJ = - 40 °C DC gate current required to trigger MAX. TJ = TJ maximum Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 180 - 80 120 40 - 2.5 - 1.6 2 1 - mA V 6.0 mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS VALUES TJ -40 to +140 TStg -40 to +150 Maximum thermal resistance, junction to case RthJC DC operation 0.27 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) Mounting torque, ± 10 % Approximate weight 130 Case style See dimensions - link at the end of datasheet UNITS °C K/W N·m (lbf · in) g TO-94 (TO-209AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.043 0.031 120° 0.052 0.053 90° 0.066 0.071 60° 0.096 0.101 30° 0.167 0.169 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 24-Jan-18 Document Number: 94379 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors 140 140 RthJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) RthJC (DC) = 0.27 K/W 130 Ø 120 Conduction angle 110 100 120° 90 30° 60° 90° 130 120 Ø Conduction period 110 100 DC 90 30° 180° 180° 90° 70 80 0 20 40 60 80 100 0 120 Average On-State Current (A) 94379_01 20 40 60 80 100 120 140 160 180 Average On-State Current (A) 94379_02 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 160 140 Ø 40 Conduction angle 20 TJ = 140 °C /W R -Δ 60 W 80 W W 1K 100 60 1.5 K/W 2 K/ W 40 4 K/W 80 20 0 K/ K/ RMS limit 6 K/ 3 100 0. 0.8 120 0. 120 140 = 180° 120° 90° 60° 30° SA Maximum Average On-State Power Loss (W) 160 R th Maximum Average On-State Power Loss (W) 120° 60° 80 5 K/W 0 0 20 40 60 80 100 120 Average On-State Current (A) 94379_03a 0 20 40 60 80 100 120 140 120 140 Maximum Allowable Ambient Temperature (°C) 94379_03b Fig. 3 - On-State Power Loss Characteristics 220 200 DC 180° 120° 90° 60° 30° 180 160 140 120 RMS limit 100 80 60 Ø 40 Conduction period 20 TJ = 140 °C Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 220 200 th SA 160 = 0. 3 0.6 140 0.8 120 W 60 1.5 K /W 2 K/W 40 4 K/W 80 20 K/ W K/ K/ 1K W /W 100 0 -Δ R 5 K/W 0 0 94379_04a R 180 20 40 60 80 100 120 140 160 180 Average On-State Current (A) 0 20 94379_04b 40 60 80 100 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 24-Jan-18 Document Number: 94379 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors 2500 2000 Peak Half Sine Wave On-State Current (A) 1800 1600 Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 140 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1400 1200 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 140 °C No voltage reapplied Rated VRRM reapplied 2000 1500 1000 1000 800 1 10 500 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 94379_05 1 10 Pulse Train Duration (s) 94379_06 Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) 0.1 Fig. 6 - Maximum Non-Repetitive Surge Current 10 000 TJ = 25 °C 1000 TJ = 140 °C 100 10 1 0 94379_07 1 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value RthJC = 0.27 K/W (DC operation) 0.1 0.01 0.001 0.0001 94379_08 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Revision: 24-Jan-18 Document Number: 94379 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors 10 Rectangular gate pulse (a) Recommended load line for rated dI/dt: 20 V, 30 Ω, tr ≤ 0.5 μs, tp ≥ 6 μs (b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω, tr ≤ 1 μs, tp ≥ 6 μs VGD 0.1 0.001 (b) TJ = 40 °C 1 (1) PGM = 12 W, tp = 5 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms (4) PGM = 200 W, tp = 300 μs (a) TJ = 25 °C TJ = 140 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) Frequency limited by PG(AV) IGD 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) 94379_09 Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 11 0 RKI 120 M PbF 1 2 3 4 5 6 7 - Vishay Semiconductors product 2 - IT(AV) rated average output current (rounded/10) 3 - 0 = eyelet terminals (gate and auxiliary cathode leads) 4 - 1 = fast-on terminals (gate and auxiliary cathode leads) Thyristor 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - 1 None = stud base1/2"-20UNF-2A threads M = stud base metric threads M12 x 1.75 E 6 7 - None = standard production PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95003 Revision: 24-Jan-18 Document Number: 94379 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AC (TO-94) for 110RKI and 111RKI Series DIMENSIONS in millimeters (inches) Ceramic housing 37 )M IN . 2.6 (0.10) MAX. 16.5 (0.65) MAX. (0. Ø 8.5 (0.33) 9 .5 Ø 4.3 (0.17) Flexible lead 20 (0.79) MIN. 2 C.S. 16 mm (0.025 s.i.) C.S. 0.4 mm2 Red silicon rubber (0.0006 s.i.) Red cathode 157 (6.18) 170 (6.69) White gate 215 ± 10 (8.46 ± 0.39) Fast-on terminals Red shrink 55 (2.16) MIN. White shrink AMP. 280000-1 REF-250 Ø 22.5 (0.88) MAX. 24 (0.94) MAX. 10 (0.39) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Note • For metric device: M12 x 1.75 contact factory Document Number: 95363 Revision: 25-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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