VS-123NQ100PbF
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Vishay Semiconductors
High Performance Schottky Rectifier, 120 A
FEATURES
• 175 °C TJ operation
Lug terminal
anode
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
Base
cathode
• UL approved file E222165
HALF-PAK (D-67)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IF(AV)
120 A
VR
100 V
Package
HALF-PAK (D-67)
Circuit configuration
Single diode
The VS-123NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
120 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
120
A
100
V
12 800
A
0.73
V
-55 to +175
°C
VS-123NQ100PbF
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
120
A
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
15
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
A
Repetitive avalanche current
50 % duty cycle at TC = 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
12 800
A
1800
Revision: 01-Feb-2019
Document Number: 94129
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-123NQ100PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
120 A
Maximum forward voltage drop
See fig. 1
VFM (1)
VALUES
0.91
TJ = 25 °C
240 A
120 A
1.26
TJ = 25 °C
0.9
3
Maximum reverse leakage current
See fig. 2
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance
LS
From top of terminal hole to mounting plane
Maximum voltage rate of change
dV/dt
VR = Rated VR
TJ = 125 °C
V
0.73
TJ = 125 °C
240 A
UNITS
mA
40
Rated VR
2650
pF
7.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +175
°C
Note
(1) Pulse width = 500 μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
DC operation
See fig. 4
0.38
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
0.05
Approximate weight
minimum
Mounting torque
g
oz.
4 (35.4)
Non-lubricated threads
minimum
3.4 (30)
maximum
N m
(lbf in)
5 (44.2)
Case style
HALF-PAK module
1000
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
30
1.06
3 (26.5)
maximum
Terminal torque
°C/W
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
1
0.001
0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 01-Feb-2019
Document Number: 94129
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-123NQ100PbF
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
10 20 30 40 50 60 70 80 90 100 110
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
0.1
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
1
0.1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
120
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
DC
150
140
Square wave (D = 0.50)
80 % rated VR applied
130
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
80
RMS limit
60
40
DC
20
See note (1)
0
100
0
30
60
90
120
150
180
0
20
40
60
80
100 120 140 160 180
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 01-Feb-2019
Document Number: 94129
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-123NQ100PbF
www.vishay.com
IFSM - Non-Repetitive Surge Current (A)
Vishay Semiconductors
100 000
10 000
1000
100
10
10 000
1000
100
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Current
monitor
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
Device code
VS-
12
3
N
Q
1
2
3
4
5
100 PbF
6
1
-
Vishay Semiconductors product
2
-
Average current rating (x 10)
3
-
Product silicon identification
4
-
N = not isolated
5
-
Q = Schottky rectifier diode
6
-
Voltage rating (100 = 100 V)
7
-
Lead (Pb)-free
7
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 01-Feb-2019
Document Number: 94129
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24.4 (0.96)
13 (0.51)
17.5 (0.69)
16.5 (0.65)
5 (0.20)
4 (0.16)
30 ± 0.05
(1.2 ± 0.002)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
21 (0.82)
20 (0.78)
Ø 4.3
(Ø 0.169
- 0.1
0.0
- 0.004
)
0.000
¼" - 20 UNC
40 MAX. (1.58)
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 01-Jan-2022
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Document Number: 91000