VS-125NQ015PbF
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Vishay Semiconductors
High Performance Schottky Rectifiers, 120 A
FEATURES
• 125 °C TJ operation (VR < 5 V)
Lug terminal
anode
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified for industrial level
Base
cathode
HALF-PAK (D-67)
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IF(AV)
120 A
VR
15 V
Package
HALF-PAK (D-67)
Circuit configuration
Single diode
The VS-125NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 125 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
120 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
120
A
15
V
10 800
A
0.37
V
-55 to +125
°C
SYMBOL
VS-125NQ015PbF
UNITS
VR
15
VRWM
25
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 5 A, L = 1 mH
12
mJ
IAR
Current decaying linearly to zero in 1 μsr
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
A
Repetitive avalanche current
50 % duty cycle at TC = 74 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
120
10 800
A
1700
Revision: 10-Jun-2020
Document Number: 94459
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-125NQ015PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
120 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
120 A
IRM (1)
0.58
0.52
40
VR = Rated VR
TJ = 100 °C
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance
LS
From top of terminal hole to mounting plane
dV/dt
mA
2000
Maximum junction capacitance
Maximum voltage rate of change
V
0.37
TJ = 75 °C
TJ = 25 °C
UNITS
0.43
TJ = 25 °C
240 A
240 A
Maximum reverse leakage current per leg
See fig. 2
VALUES
Rated VR
7700
pF
7.0
nH
10 000
V/μs
VALUES
UNITS
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
-55 to 125
Maximum storage temperature range
TStg
-55 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
See fig. 4
0.38
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
0.05
Approximate weight
Mounting torque
Terminal torque
oz.
3 (26.5)
N·m
(lbf · in)
3.4 (30)
maximum
5 (44.2)
HALF-PAK module
1000
10 000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
1.06
4 (35.4)
Case style
TJ = 100 °C
100
TJ = 75 °C
10
TJ = 25 °C
1
TJ = 100 °C
1000
TJ = 75 °C
100
10
TJ = 25 °C
1
0
94459_01
g
minimum
Non-lubricated threads
°C/W
30
maximum
minimum
°C
0.3
0.6
0.9
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
94459_02
3
6
9
12
15
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Jun-2020
Document Number: 94459
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-125NQ015PbF
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
1000
0
5
10
15
20
25
30
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
10
1
t1 - Rectangular Pulse Duration (s)
100
105
95
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
DC
85
75
Square wave (D = 0.50)
80 % rated VR applied
65
55
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
80
60
40
RMS limit
20
DC
See note (1)
0
45
0
30
60
90
120
150
180
0
30
60
90
120
150
180
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 10-Jun-2020
Document Number: 94459
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-125NQ015PbF
www.vishay.com
IFSM - Non-Repetitive Surge Current (A)
Vishay Semiconductors
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
10
1000
100
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Current
monitor
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
Device code
VS-
12
5
N
Q
1
2
3
4
5
015 PbF
6
1
-
Vishay Semiconductors product
2
-
Average current rating (x 10)
3
-
Product silicon identification
4
-
N = not isolated
5
-
Q = Schottky rectifier diode
6
-
Voltage rating (015 = 15 V)
7
-
Lead (Pb)-free
7
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 10-Jun-2020
Document Number: 94459
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24.4 (0.96)
13 (0.51)
17.5 (0.69)
16.5 (0.65)
5 (0.20)
4 (0.16)
30 ± 0.05
(1.2 ± 0.002)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
21 (0.82)
20 (0.78)
Ø 4.3
(Ø 0.169
- 0.1
0.0
- 0.004
)
0.000
¼" - 20 UNC
40 MAX. (1.58)
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 01-Jan-2022
1
Document Number: 91000