VS-12CTQ035-M3

VS-12CTQ035-M3, VS-12CTQ040-M3, VS12CTQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • 175 °C TJ operation • Center tap TO-220 package • Low forward voltage drop • High frequency operation Anode 3L TO-220AB • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 2 Common Anode 1 cathode 3 • Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARACTERISTICS IF(AV) 2x6A VR 35 V, 40 V, 45 V • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.53 V IRM max. 7 mA at 125 °C TJ max. 175 °C EAS 8 mJ Package 3L TO-220AB Circuit configuration Common cathode DESCRIPTION The VS-12CTQ... center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 6 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 12 A 35 to 45 V 690 A 0.53 V -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-12CTQ035-M3 VS-12CTQ040-M3 VS-12CTQ045-M3 UNITS 35 40 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current. See fig. 5 per leg per device SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 160 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied Maximum peak one cycle non-repetitive surge current per leg. See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 10 ms sine or 6 ms rect. pulse VALUES 6 12 UNITS A 690 140 A 8 mJ 1.20 A Revision: 17-Aug-17 Document Number: 96270 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CTQ035-M3, VS-12CTQ040-M3, VS12CTQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 6A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 12 A 6A TJ = 125 °C 12 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VALUES UNITS 0.60 0.73 V 0.53 0.64 0.8 mA 7.0 0.35 V Forward slope resistance rt 18.23 m Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 400 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt 10 000 V/µs VALUES UNITS -55 to +175 °C Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case per leg RthJC Maximum thermal resistance,  junction to case per package Typical thermal resistance,  case to heatsink RthCS DC operation See fig. 4 3.50 DC operation 1.75 Mounting surface, smooth and greased 0.50 Approximate weight Mounting torque °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 12CTQ035 Marking device Case style 3L TO-220AB 12CTQ040 12CTQ045 Revision: 17-Aug-17 Document Number: 96270 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CTQ035-M3, VS-12CTQ040-M3, VS12CTQ045-M3 Vishay Semiconductors 100 100 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 TJ = 125 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C TJ = 25 °C 0.0001 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 10 5 20 15 25 30 35 40 45 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 20 10 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.01 0.001 0.00001 Single pulse (thermal resistance) 0.0001 0.001 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 17-Aug-17 Document Number: 96270 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CTQ035-M3, VS-12CTQ040-M3, VS12CTQ045-M3 www.vishay.com Vishay Semiconductors 5.0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 4.5 Average Power Loss - (W) Allowable Case Temperature (°C) 175 170 DC 165 160 Square wave (D = 0.50) 80 % rated VR applied 155 4.0 3.5 3.0 RMS limit 2.5 2.0 DC 1.5 1.0 0.5 See note (1) 150 0 0 2 4 8 6 10 2 0 4 6 8 10 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 17-Aug-17 Document Number: 96270 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CTQ035-M3, VS-12CTQ040-M3, VS12CTQ045-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 12 C T Q 045 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (12 = 12 A) 3 - Circuit configuration: 4 - C = common cathode Package: T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings 7 - Environmental digit 035 = 35 V 040 = 40 V 045 = 45 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-12CTQ035-M3 50 1000 Antistatic plastic tube VS-12CTQ040-M3 50 1000 Antistatic plastic tube VS-12CTQ045-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 SPICE model www.vishay.com/doc?95629 Revision: 17-Aug-17 Document Number: 96270 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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