VS-12CWQ04FNTR-M3

VS-12CWQ04FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Popular D-PAK outline • Center tap configuration 2 Common cathode 1 3 Anode Anode D-PAK (TO-252AA) • Small foot print, surface mountable • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2x6A VR 40 V VF at IF 0.48 V DESCRIPTION IRM 40 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 9 mJ The VS-12CWQ04FN-M3 surface mount, center tap, Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 12 A 40 V 550 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 6 Apk, TJ = 125 °C (per leg) TJ Range 0.48 V -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-12CWQ04FN-M3 UNITS 40 V TEST CONDITIONS VALUES VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL per leg 6 IF(AV) 50 % duty cycle at TC = 134 °C, rectangular waveform per device A 12 Following any rated load condition and with rated VRRM applied Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.5 A, L = 8 mH IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Repetitive avalanche current per leg UNITS 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse 550 A 90 9 mJ 1.2 A Revision: 22-Nov-16 Document Number: 93286 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ04FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 6A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 12 A 6A TJ = 125 °C 12 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 °C VALUES UNITS 0.53 0.68 V 0.48 0.64 3 VR = Rated VR TJ = 125 °C mA 40 TJ = TJ maximum 0.28 V 25.58 m Forward slope resistance rt Typical junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 405 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 5.0 nH VALUES UNITS -55 to +150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and srorage  temperature range TJ (1), TStg Maximum thermal resistance,  junction to case per leg per device RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK (similar to TO-252AA) 3.0 1.5 °C/W 0.3 g 0.01 oz. 12CWQ04FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 22-Nov-16 Document Number: 93286 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ04FN-M3 www.vishay.com Vishay Semiconductors 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 150 °C TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 10 5 VFM - Forward Voltage Drop (V) 15 20 25 30 35 40 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 22-Nov-16 Document Number: 93286 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ04FN-M3 www.vishay.com Vishay Semiconductors 5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 145 Average Power Loss (W) Allowable Case Temperature (°C) 155 DC 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 120 4 3 RMS limit 2 DC 1 See note (1) 115 0 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 22-Nov-16 Document Number: 93286 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ04FN-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 12 C W Q 04 FN 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (12 A) 3 - Center tap configuration- 4 - Package identifier: TRL -M3 8 9 W = D-PAK 4 5 - Schottky “Q” series 6 - Voltage rating (04 = 40 V) 7 - FN = TO-252AA 8 - None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-12CWQ04FNTR-M3 2000 2000 13" diameter reel VS-12CWQ04FNTRL-M3 3000 3000 13" diameter reel VS-12CWQ04FNTRR-M3 3000 3000 13" diameter reel VS-12CWQ04FN-M3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 Revision: 22-Nov-16 Document Number: 93286 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) “M” DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail “C” (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC® outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000