VS-12CWQ06FNTRRHM3

VS-12CWQ06FNHM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Popular D-PAK outline 2 Common cathode 1 3 Anode Anode D-PAK (TO-252AA) • Center tap configuration • Small foot print, surface mountable • High frequency operation • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2x6A • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VR 60 V VF at IF 0.57 V IRM 35 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 7 mJ DESCRIPTION The VS-12CWQ06FNHM3 surface mount, center tap, Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 6 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 12 A 60 V 320 A 0.57 V - 55 to 150 °C VS-12CWQ06FNHM3 UNITS 60 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS per leg 50 % duty cycle at TC = 131 °C, rectangular waveform per device A 12 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.2 A, L = 10 mH IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Revision: 21-Aug-13 UNITS 6 IF(AV) Repetitive avalanche current per leg VALUES 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 320 A 105 7 mJ 0.8 A Document Number: 94735 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ06FNHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 6A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 12 A 6A TJ = 125 °C 12 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 °C VALUES UNITS 0.61 0.79 0.57 V 0.72 3 VR = Rated VR TJ = 125 °C mA 35 TJ = TJ maximum 0.36 V 24.14 m Forward slope resistance rt Typical junction capacitance per leg CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 360 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 5.0 nH VALUES UNITS - 55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TJ (1), TStg Maximum thermal resistance,  junction to case per leg per device RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK 3.0 1.5 °C/W 0.3 g 0.01 oz. 12CWQ06FNH Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 21-Aug-13 Document Number: 94735 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ06FNHM3 www.vishay.com Vishay Semiconductors 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 150 °C TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 VFM - Forward Voltage Drop (V) 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 10 20 30 40 50 60 70 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 21-Aug-13 Document Number: 94735 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ06FNHM3 www.vishay.com Vishay Semiconductors 6 145 Average Power Loss (W) Allowable Case Temperature (°C) 155 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 DC 140 135 130 Square wave (D = 0.50) 80 % rated VR applied 125 120 115 5 4 RMS limit 3 2 DC 1 See note (1) 110 0 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 21-Aug-13 Document Number: 94735 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CWQ06FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 12 C W Q 06 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (12 A) 3 - Center tap configuration- 4 - Package identifier: W = D-PAK 4 5 - Schottky “Q” series 6 - Voltage rating (06 = 60 V) 7 - FN = TO-252AA 8 - None = Tube TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-12CWQ06FNTRHM3 2000 2000 13" diameter reel VS-12CWQ06FNTRRHM3 3000 3000 13" diameter reel VS-12CWQ06FNTRLHM3 3000 3000 13" diameter reel VS-12CWQ06FNHM3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 21-Aug-13 Document Number: 94735 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DPAK (TO-252AA) DIMENSIONS in millimeters and inches Pad layout E A 0.265 (6.74) min. b3 E1 c2 L3 4 4 Seating plane D 1 2 L5 0.245 (6.23) min. H L4 3 D1 3 1 2 0.488 (12.40) 0.409 (10.40) Detail “C” b2 0.089 (2.28) min. c b e L1 e1 Lead tip 0.06 (1.524) min. Detail “C” Gauge plane L2 0.093 (2.38) 0.085 (2.18) A1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 3 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 5 D1 5.21 - 0.205 - 3 E 6.35 6.73 0.250 0.265 5 E1 4.32 - 0.170 - 3 2.74 BSC L2 L3 c2 2.29 BSC INCHES MIN. 0.51 BSC 0.89 1.27 NOTES 0.090 BSC 0.108 REF. 0.020 BSC 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (5) Outline conforms to JEDEC® outline TO-252AA Revision: 06-Jun-17 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000