VS-12F(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 12 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-4 (DO-203AA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
12 A
Package
DO-4 (DO-203AA)
Circuit configuration
Single
• Battery charges
• Converters
• Power supplies
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
I2t
VRRM
UNITS
12
A
TC
144
°C
19
A
50 Hz
265
60 Hz
280
IF(RMS)
IFSM
VALUES
A
50 Hz
351
60 Hz
320
Range
100 to 1200
V
-65 to +175
°C
IRRM MAXIMUM
AT TJ = 175 °C
mA
TJ
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-12F(R)
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
10
100
150
20
200
275
40
400
500
60
600
725
80
800
950
100
1000
1200
120
1200
1400
12
Revision: 11-Jan-18
Document Number: 93487
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VS-12F(R) Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
VALUES
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
A
144
°C
19
A
No voltage
reapplied
265
100 % VRRM
reapplied
225
280
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
A
235
351
320
100 % VRRM
reapplied
UNITS
12
250
A2s
226
t = 0.1 to 10 ms, no voltage reapplied
3510
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.77
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.97
A2s
V
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
10.70
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
6.20
Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.26
V
VALUES
UNITS
m
Maximum forward voltage drop
VFM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-65 to +175
TStg
-65 to +200
Maximum thermal resistance, junction to case
RthJC
DC operation
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
2
Not lubricated threads
Allowable mounting torque
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
0.5
°C
K/W
1.5 + 0 - 10 %
N·m
13
lbf · in
1.2 + 0 - 10 %
N·m
10
lbf · in
7
g
0.25
oz.
DO-4 (DO-203AA)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.33
0.26
120°
0.41
0.44
90°
0.53
0.58
60°
0.78
0.81
30°
1.28
1.29
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93487
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12F(R) Series
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180
12F(R) Series
R thJC (DC) = 2.0 K/W
12F(R) Series
R thJC (DC) = 2.0 K/W
170
Conduction Angle
160
150
30°
60°
90°
120°
2
4
6
8
10
160
12
Conduction Period
150
30°
60°
90°
140
120°
180°
180°
140
0
170
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
180
Vishay Semiconductors
DC
130
0
14
4
8
12
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward
Power Loss (W)
14
180°
120°
90°
60°
30°
12
10
10
K/W
12
K/W
th
SA
=8
6K
/W
K/W
15 K
/W
-D
elta
R
20 K
/W
RMS Limit
8
R
20
6
30 K /W
Conduction Angle
4
12F(R) Series
TJ = 175°C
2
0
0
2
4
6
8
10
12
Average Forward Current (A)
14
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward
Power Loss (W)
20
Rt
DC
180°
120°
90°
60°
30°
16
12
A
=6
K/W
-D
elta
R
12 K
/W
15 K
/W
20 K/W
RMS Limit
8
hS
8 K/
W
10 K
/W
Conduction Period
4
30 K/W
12F(R) Series
TJ = 175°C
0
0
4
8
12
16
Average Forward Current (A)
20
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93487
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12F(R) Series
Instantaneous Forward Current (A)
250
Vishay Semiconductors
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
225
200
175
150
125
12F(R) Series
100
1
10
1000
TJ = 25°C
TJ = 175°C
100
10
12F(R) Series
1
0
100
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
275
ZthJC - Transient Thermal Impedance (°C/W)
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 175°C
No Voltage Reapplied
Rated VRRM Reapplied
250
225
200
175
150
125
12F(R) Series
100
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10
Steady State Value
R thJC = 2.0 K/W
(DC Operation)
1
12F(R) Series
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
12
F
R
120
M
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating: code = IF(AV)
3
-
F = standard device
4
-
None = stud normal polarity (cathode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
None = stud base DO-4 (DO-203AA) 10-32UNF-2A
R = stud reverse polarity (anode to stud)
M = stud base DO-4 (DO-203AA) M5 x 0.8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 11-Jan-18
Document Number: 93487
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS in millimeters (inches)
+ 0.3
0
+ 0.01
(0.08
0)
0.8 ± 0.1
(0.03 ± 0.004)
3.30 (0.13)
4.00 (0.16)
2
5.50 (0.22) MIN.
R 0.40
R (0.02)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40)
MAX.
3.50 (0.14)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact: indmodules@vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000