VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
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Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
FEATURES
Base
cathode
2
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
3
1
D2PAK
(TO-263AB)
3
Anode
1
N/C
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VR
35 V, 40 V, 45 V
VF at IF
0.50 V
• AEC-Q101 qualified, meets JESD 201, class 1 whisker
test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IRM typ.
70 mA at 125 °C
TJ max.
150 °C
DESCRIPTION
EAS
16 mJ
Package
D2PAK (TO-263AB)
Circuit configuration
Single
The VS-12TQ...SHM3 Schottky rectifier series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
15
A
35 to 45
V
990
A
0.50
V
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-12TQ035SHM3
VS-12TQ040SHM3
VS-12TQ045SHM3
UNITS
35
40
45
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50 % duty cycle at TC = 120 °C, rectangular waveform
15
A
5 μs sine or 3 μs rect. pulse
990
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
16
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2.4
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
A
250
Revision: 28-Jul-2020
Document Number: 95853
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VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
Maximum forward voltage drop
See fig. 1
VFM (1)
VALUES
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
TJ = 25 °C
UNITS
0.56
0.71
V
0.50
0.64
1.75
Maximum reverse leakage current
IRM (1)
Typical reverse leakage current
IRM (1)
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
900
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
Maximum voltage rate of change
dV/dt
VR = rated VR
TJ = 125 °C
TJ = 125 °C
VR = rated VR
Rated VR
110
70
mA
mA
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
2.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Marking device
°C/W
Case style D2PAK
12TQ030SH
12TQ040SH
12TQ045SH
Revision: 28-Jul-2020
Document Number: 95853
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward
Current (A)
1000
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.1
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
0
1.8
10
5
VFM - Forward Voltage Drop (V)
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
0.0001
0.001
0.01
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 28-Jul-2020
Document Number: 95853
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
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Vishay Semiconductors
12
RthJC (DC) = 2.0 °C/W
Average Power Loss (W)
Allowable Case Temperature (°C)
155
145
135
DC
125
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
10
8
RMS limit
6
4
DC
2
0
115
0
4
8
12
16
20
0
24
2
4
6
8
10 12 14 16 18 20 22
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 28-Jul-2020
Document Number: 95853
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
T
Q
045
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
Package: T = TO-220, D2PAK
4
-
Schottky “Q” series
5
-
Voltage ratings
6
-
S = D2PAK
7
-
035 = 35 V
040 = 40 V
045 = 45 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
-
H = AEC-Q101 qualified
9
-
M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-12TQ035SHM3
50
1000
Antistatic plastic tubes
VS-12TQ035STRRHM3
800
800
13" diameter reel
VS-12TQ035STRLHM3
800
800
13" diameter reel
VS-12TQ040SHM3
50
1000
Antistatic plastic tubes
VS-12TQ040STRRHM3
800
800
13" diameter reel
VS-12TQ040STRLHM3
800
800
13" diameter reel
VS-12TQ045SHM3
50
1000
Antistatic plastic tubes
VS-12TQ045STRRHM3
800
800
13" diameter reel
VS-12TQ045STRLHM3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?95032
Revision: 28-Jul-2020
Document Number: 95853
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2023
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Document Number: 91000