VS-12TTS08SLHM3
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Vishay Semiconductors
Thyristor Surface Mount, Phase Control SCR, 8 A
FEATURES
Anode
2, 4
4
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
2
• Flexible solution for reliable AC power
rectification
3
1
D2PAK (TO-263AB)
1
Cathode
3
Gate
• Easy control peak current at charger power up to reduce
passive / electromechanical components
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
APPLICATIONS
IT(AV)
8A
VDRM/VRRM
800 V
• On-board and off-board EV / HEV battery chargers
VTM
1.2 V
• Renewable energy inverters
IGT
15 mA
TJ
Package
Circuit configuration
DESCRIPTION
-40 to +125 °C
D2PAK
The VS-12TTS08SLHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
(TO-263AB)
Single SCR
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
13.5
17
A
TEST CONDITIONS
VALUES
UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
Sinusoidal waveform
8
A
IT(RMS)
12.5
VRRM/VDRM
800
V
ITSM
110
A
1.2
V
VT
8 A, TJ = 25 °C
dV/dt
150
V/μs
dI/dt
100
A/μs
-40 to +125
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM / IDRM
AT 125 °C
mA
800
800
5.0
TJ
Range
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08SLHM3
Revision: 22-Feb-18
Document Number: 96121
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VS-12TTS08SLHM3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
TC = 108 °C, 180° conduction, half sine wave
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
110
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
45
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
64
640
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C
Maximum on-state voltage drop
VTM
8 A, TJ = 25 °C
Threshold voltage
Maximum reverse and direct leakage current
Typical holding current
Typical latching current
rt
VT(TO)
IRM/IDM
IH
IL
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
12.5
95
I2t
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM / VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
UNITS
8
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
Maximum I2t for fusing
On-state slope resistance
VALUES
A
A2s
A2s
1.2
V
16.2
m
0.87
V
0.05
5.0
30
mA
Anode supply = 6 V, resistive load, TJ = 25 °C
50
TJ = TJ max., linear to 80 %, VDRM = Rg - k = open
150
V/μs
100
A/μs
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
SYMBOL
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+IGM
1.5
A
Maximum peak negative gate voltage
-VGM
10
V
Maximum average gate power
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 65 °C
20
Anode supply = 6 V, resistive load, TJ = 25 °C
15
Anode supply = 6 V, resistive load, TJ = 125 °C
10
Anode supply = 6 V, resistive load, TJ = -65 °C
1.2
Anode supply = 6 V, resistive load, TJ = 25 °C
1
Anode supply = 6 V, resistive load, TJ = 125 °C
0.7
TJ = 125 °C, VDRM = rated value
W
mA
V
0.2
0.1
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.8
3
μs
100
Revision: 22-Feb-18
Document Number: 96121
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-12TTS08SLHM3
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
-40 to +125
°C
DC operation
1.5
Mounting surface, smooth, and greased
0.5
Approximate weight
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
125
R thJC (DC) = 1.5 K/W
120
115
Conduction angle
110
30°
60°
105
90°
120°
180°
100
0
2
4
6
8
180°
120°
90°
60°
30°
8
7
6
RMS Limit
5
4
Conduction angle
3
2
TJ = 125 °C
1
0
0
120
Conduction period
30°
60°
90°
120°
105
180°
DC
100
2
4
6
8
10
2
3
4
5
6
7
8
9
12
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
R thJC (DC) = 1.5 K/W
110
1
Average On-state Current (A)
125
115
12TTS08SH
9
10
Fig. 1 - Current Rating Characteristics
Maximum Allowable Case Temperature (°C)
g
oz.
10
Average On-state Current (A)
0
2
0.07
Case style D2PAK (TO-263AB)
Marking device
°C/W
62
14
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
14
DC
180°
120°
90°
60°
30°
12
10
8
RMS Limit
6
Conduction Period
4
TJ = 125 °C
2
0
0
2
4
6
8
10
12
14
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Feb-18
Document Number: 96121
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VS-12TTS08SLHM3
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Vishay Semiconductors
120
110
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
90
110
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
100
80
70
60
50
100
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
90
80
70
60
50
40
0.01
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.1
1
Pulse Train Duration (s)
10
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
100
TJ = 25 °C
10
TJ = 125 °C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 22-Feb-18
Document Number: 96121
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VS-12TTS08SLHM3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
T
T
S
08
S
L
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (12.5 A)
3
-
Circuit configuration:
T = single thyristor
4
-
Package:
T = D2PAK (TO-263AB)
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating (08 = 800 V)
7
-
S = surface mountable
8
-
L = tape and reel (left oriented), for different orientation contact factory
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-12TTS08SLHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96317
Revision: 22-Feb-18
Document Number: 96121
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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