VS-12TTS08S-M3 Series
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Thyristor Surface Mount, Phase Control SCR, 8 A
FEATURES
Anode
2, 4
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed
and
JEDEC®-JESD 47
2
1
Cathode
D2PAK (TO-263AB)
according
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
3
qualified
J-STD-020,
3
Gate
APPLICATIONS
• Input rectification and crow-bar (soft start)
PRIMARY CHARACTERISTICS
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
IT(AV)
8A
VDRM/VRRM
800 V
VTM
1.2 V
IGT
15 mA
DESCRIPTION
TJ
-40 to +125 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single SCR
The VS-12TTS08S-M3 High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
13.5
17
A
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
8
UNITS
A
IT(RMS)
12.5
VRRM/VDRM
800
V
ITSM
110
A
VT
1.2
V
dV/dt
150
V/μs
dI/dt
100
A/μs
-40 to +125
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
800
800
1.0
TJ
8 A, TJ = 25 °C
Range
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08S-M3
Revision: 30-Nov-2021
Document Number: 96411
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
95
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
110
45
I2√t
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C
640
VTM
8 A, TJ = 25 °C
Maximum on-state voltage drop
Maximum reverse and direct leakage current
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
64
Maximum I2√t for fusing
rt
VT(TO)
IRM/IDM
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
V
0.87
V
0.05
1.0
30
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
50
dI/dt
TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open
A2√s
mΩ
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
dV/dt
A2s
1.2
IH
Maximum rate of rise of turned-on current
A
16.2
Typical holding current
Maximum rate of rise of off-state voltage
UNITS
8
12.5
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
I2t
Threshold voltage
TC = 108 °C, 180° conduction, half sine wave
VALUES
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
Maximum I2t for fusing
On-state slope resistance
TEST CONDITIONS
mA
150
V/μs
100
A/μs
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum average gate power
Anode supply = 6 V, resistive load, TJ = - 65 °C
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
20
Anode supply = 6 V, resistive load, TJ = 25 °C
15
Anode supply = 6 V, resistive load, TJ = 125 °C
10
Anode supply = 6 V, resistive load, TJ = - 65 °C
1.2
Anode supply = 6 V, resistive load, TJ = 25 °C
1
Anode supply = 6 V, resistive load, TJ = 125 °C
0.7
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.2
0.1
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.8
3
μs
100
Revision: 30-Nov-2021
Document Number: 96411
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VS-12TTS08S-M3 Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
-40 to +125
°C
DC operation
1.5
Mounting surface, smooth and greased
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf ⋅ cm
(lbf ⋅ in)
Approximate weight
Mounting torque
12TTS08
R thJC (DC) = 1.5 K/ W
120
115
Conduc tion Angle
110
30°
60°
90°
120°
180°
100
0
2
4
6
8
10
12TTS08S
10
180°
120°
90°
60°
30°
9
8
7
6
RMSLimit
5
4
Conduction Angle
3
2
12TTS08
TJ= 125°C
1
0
0
1
2
3
4
5
6
7
8
9
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
125
12TTS08
R thJC(DC) = 1.5 K/ W
120
115
Conduction Period
110
30°
60°
90°
120°
105
180°
DC
100
0
2
4
6
8
10
12
14
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
125
Maximum Average On-state Power Loss (W)
Case style D2PAK (TO-263AB)
Marking device
105
°C/W
62
14
DC
180°
120°
90°
60°
30°
12
10
8
RMS Limit
6
4
Conduction Period
2
12TTS08
TJ = 125°C
0
0
2
4
6
8
10
12
14
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 30-Nov-2021
Document Number: 96411
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120
110
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
90
110
100
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
100
80
70
60
90
80
70
60
VS-12TTS08
50
50
VS-12TTS08
40
0.01
40
1
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.1
1
Pulse Train Duration (s)
10
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
12TTS08
100
TJ= 25°C
10
TJ= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
12TTS08
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 30-Nov-2021
Document Number: 96411
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VS-12TTS08S-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
T
T
S
08
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (12.5 A)
3
-
TRL -M3
8
9
Circuit configuration:
T = single thyristor
4
-
Package:
T = D2PAK (TO-263AB)
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating (08 = 800 V)
7
-
S = surface mountable
8
-
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
VS-12TTS08S-M3
50
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-12TTS08STRL-M3
800
13" diameter plastic tape and reel
VS-12TTS08STRR-M3
800
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 30-Nov-2021
Document Number: 96411
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jul-2024
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