VS-150EBU02
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Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
Cathode
• Designed and
JEDEC-JESD47
Anode
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
• PowerTab® package
PowerTab®
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
PRODUCT SUMMARY
• Reduced parts count
Package
PowerTab®
IF(AV)
150 A
VR
200 V
DESCRIPTION/APPLICATIONS
VF at IF
1.13 V
trr (typ.)
See recovery table
TJ max.
175 °C
Diode variation
Single die
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
MAX.
UNITS
200
V
VR
IF(AV)
TC = 116 °C
150
Single pulse forward current
IFSM
TC = 25 °C
1600
Maximum repetitive forward current
IFRM
Square wave, 20 kHz
380
Continuous forward current
Operating junction and storage
temperatures
TJ, TStg
A
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
Series inductance
LS
Revision: 15-Jun-11
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 150 A
-
0.99
1.13
IF = 150 A, TJ = 175 °C
-
0.79
0.90
IR = 100 μA
UNITS
V
VR = VR rated
-
-
50
μA
TJ = 150 °C, VR = VR rated
-
-
2
mA
VR = 200 V
-
180
-
pF
Measured lead to lead 5 mm from package body
-
3.5
-
nH
Document Number: 93002
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VS-150EBU02
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
Reverse recovery charge
IRRM
Qrr
TYP.
MAX.
UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
-
45
TJ = 25 °C
-
34
-
-
58
-
-
4.5
-
-
9.0
-
TJ = 25 °C
-
87
-
TJ = 125 °C
-
300
-
MIN.
TYP.
MAX.
-
-
0.35
-
0.2
-
-
-
5.02
-
0.18
-
oz.
-
2.4
(20)
N·m
(lbf · in)
TJ = 125 °C
Peak recovery current
MIN.
IF = 150 A
VR = 160 V
dIF/dt = 200 A/μs
TJ = 25 °C
TJ = 125 °C
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
K/W
Mounting surface, flat, smooth and greased
Weight
1.2
(10)
Mounting torque
Marking device
Revision: 15-Jun-11
UNITS
Case style PowerTab®
g
150EBU02
Document Number: 93002
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150EBU02
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Vishay Semiconductors
1000
Instantaneous Forward Current - I F (A)
Reverse Current - I R (µA)
1000
T J = 175˚C
100
125˚C
10
1
25˚C
0.1
0.01
100
0.001
0
T = 175˚C
50
J
100
150
200
Reverse Voltage - VR (V)
T = 125˚C
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
J
T = 25˚C
J
Junction Capacitance - C T (pF)
10000
10
1
0
0.2 0.4 0.6 0.8
1
T J = 25˚C
1000
100
1.2 1.4 1.6 1.8
1
10
100
1000
Forward Voltage Drop - VFM (V)
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance Z thJC (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Jun-11
Document Number: 93002
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VS-150EBU02
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Vishay Semiconductors
70
IF = 150A
IF = 75A
60
160
50
140
DC
trr ( ns )
Allowable Case Temperature (°C)
180
120
40
100 Square wave (D = 0.50)
80% Rated Vr applied
30
80
see note (1)
20
60
0
50
100
150
200
250
Average Forward Current - IF(AV) (A)
Vr = 160V
Tj = 125˚C
Tj = 25˚C
10
100
1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
900
800
700
RMS Limit
200
600
150
Qrr ( nC )
Average Power Loss ( Watts )
250
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
100
50
50
100
150
200
IF = 150A
IF = 75A
500
400
300
200
0
0
Vr = 160V
Tj = 125˚C
Tj = 25˚C
250
Average Forward Current - IF(AV) (A)
100
0
100
1000
di F /dt (A/µs )
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 15-Jun-11
Document Number: 93002
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150EBU02
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Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-11
Document Number: 93002
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-150EBU02
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
150
E
B
U
02
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (150 = 150 A)
3
-
Single diode
4
-
PowerTab® (ultrafast/hyperfast only)
5
-
Ultrafast recovery
6
-
Voltage rating (02 = 200 V)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
www.vishay.com/doc?95370
Application note
www.vishay.com/doc?95179
Revision: 15-Jun-11
Document Number: 93002
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
PowerTab®
15.90 (0.62)
15.60 (0.61)
1.35 (0.05)
1.20 (0.04)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
4.95 (0.19)
4.75 (0.18)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.20 (0.20)
4.95 (0.19)
Lead 2
3.09 (0.12)
3.00 (0.11)
5.45 REF.
(0.21 REF.)
0.60 (0.02)
0.40 (0.01)
39.8 (1.56)
39.6 (1.55)
12.10 (0.47)
12.40 (0.48)
Lead 1
27.65 (1.08)
27.25 (1.07)
15.60 (0.61)
14.80 (0.58)
18.25 (0.71)
18.00 (0.70)
4.20 (0.16)
4.00 (0.15)
8.45 (0.33)
8.20 (0.32)
DIMENSIONS in millimeters (inches)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Revision: 03-Aug-11
Document Number: 95240
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
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Document Number: 91000
