VS-150EBU02

VS-150EBU02 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • Designed and JEDEC-JESD47 Anode qualified according to • Compliant to RoHS Directive 2002/95/EC • PowerTab® package PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY • Reduced parts count Package PowerTab® IF(AV) 150 A VR 200 V DESCRIPTION/APPLICATIONS VF at IF 1.13 V trr (typ.) See recovery table TJ max. 175 °C Diode variation Single die These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 200 V VR IF(AV) TC = 116 °C 150 Single pulse forward current IFSM TC = 25 °C 1600 Maximum repetitive forward current IFRM Square wave, 20 kHz 380 Continuous forward current Operating junction and storage temperatures TJ, TStg A - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS Revision: 15-Jun-11 TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 150 A - 0.99 1.13 IF = 150 A, TJ = 175 °C - 0.79 0.90 IR = 100 μA UNITS V VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 2 mA VR = 200 V - 180 - pF Measured lead to lead 5 mm from package body - 3.5 - nH Document Number: 93002 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS Reverse recovery charge IRRM Qrr TYP. MAX. UNITS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 45 TJ = 25 °C - 34 - - 58 - - 4.5 - - 9.0 - TJ = 25 °C - 87 - TJ = 125 °C - 300 - MIN. TYP. MAX. - - 0.35 - 0.2 - - - 5.02 - 0.18 - oz. - 2.4 (20) N·m (lbf · in) TJ = 125 °C Peak recovery current MIN. IF = 150 A VR = 160 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight 1.2 (10) Mounting torque Marking device Revision: 15-Jun-11 UNITS Case style PowerTab® g 150EBU02 Document Number: 93002 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors 1000 Instantaneous Forward Current - I F (A) Reverse Current - I R (µA) 1000 T J = 175˚C 100 125˚C 10 1 25˚C 0.1 0.01 100 0.001 0 T = 175˚C 50 J 100 150 200 Reverse Voltage - VR (V) T = 125˚C Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage J T = 25˚C J Junction Capacitance - C T (pF) 10000 10 1 0 0.2 0.4 0.6 0.8 1 T J = 25˚C 1000 100 1.2 1.4 1.6 1.8 1 10 100 1000 Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jun-11 Document Number: 93002 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors 70 IF = 150A IF = 75A 60 160 50 140 DC trr ( ns ) Allowable Case Temperature (°C) 180 120 40 100 Square wave (D = 0.50) 80% Rated Vr applied 30 80 see note (1) 20 60 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) Vr = 160V Tj = 125˚C Tj = 25˚C 10 100 1000 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 900 800 700 RMS Limit 200 600 150 Qrr ( nC ) Average Power Loss ( Watts ) 250 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 100 50 50 100 150 200 IF = 150A IF = 75A 500 400 300 200 0 0 Vr = 160V Tj = 125˚C Tj = 25˚C 250 Average Forward Current - IF(AV) (A) 100 0 100 1000 di F /dt (A/µs ) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 15-Jun-11 Document Number: 93002 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Jun-11 Document Number: 93002 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 150 E B U 02 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (150 = 150 A) 3 - Single diode 4 - PowerTab® (ultrafast/hyperfast only) 5 - Ultrafast recovery 6 - Voltage rating (02 = 200 V) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 Revision: 15-Jun-11 Document Number: 93002 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.20 (0.16) 4.00 (0.15) 8.45 (0.33) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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