VS-45L(R), VS-150K(R), VS-150KS(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 150 A
FEATURES
• Alloy diode
• High current carrying capability
• High surge current capabilities
• Stud cathode and stud anode version
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-8 (DO-205AA)
TYPICAL APPLICATIONS
• Battery chargers
• Welders
PRIMARY CHARACTERISTICS
• Machine tool controls
IF(AV)
150 A
Package
DO-8 (DO-205AA)
Circuit configuration
Single
• High power drives
• Medium traction applications
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
I2t
A
TC
150
°C
235
A
50 Hz
3570
60 Hz
3740
50 Hz
64
60 Hz
58
Range
VRRM
UNITS
150
IF(RMS)
IFSM
VALUES
TJ
A
kA2s
100 to 600
V
-40 to +200
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-45L(R)
VS-150K(R)
VS-150KS(R)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
10
100
200
20
200
300
30
300
400
40
400
500
60
600
720
IRRM MAXIMUM
AT TJ = 175 °C
mA
35
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VS-45L(R), VS-150K(R), VS-150KS(R) Series
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
TEST CONDITIONS
IF(AV)
180° conduction, half sine wave
IF(RMS)
DC at 142 °C case temperature
IFSM
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
Maximum I2t for fusing
I 2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 8.3 ms
A
150
°C
3570
A
3740
3000
Sinusoidal half wave,
initial TJ = TJ maximum
3140
64
58
100 % VRRM
reapplied
t = 10 ms
UNITS
150
235
No voltage
reapplied
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
VALUES
kA2s
45
41
t = 0.1 to 10 ms, no voltage reapplied
640
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.67
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.83
kA2s
V
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.42
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.91
Ipk = 471 A, TJ = 25 °C, tp = 10 ms sinusoidal wave
1.33
V
VALUES
UNITS
-40 to 200
°C
mW
Maximum forward voltage drop
VFM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.25
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.10
K/W
minimum
Mounting torque
45L
minimum
17.0 (150)
12.2 (108)
Lubricated threads
maximum
minimum
Mounting torque
150K
150KS
14.1 (125)
Not lubricated threads
maximum
15.0 (132)
11.3 (100)
Not lubricated threads
maximum
minimum
14.1 (125)
9.5 (85)
Lubricated threads
maximum
N·m
(lbf · in)
12.5 (110)
Approximate weight
45L
Case style
N·m
(lbf · in)
100
g
3.5
oz.
DO-30 (DO-205AC)
150K-A
See dimensions - link at the end of datasheet
DO-8 (DO-205AA)
150KS
B-42
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.031
0.023
120°
0.038
0.040
90°
0.048
0.053
60°
0.071
0.075
30°
0.120
0.121
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
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VS-45L(R), VS-150K(R), VS-150KS(R) Series
Vishay Semiconductors
200
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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45L...,150... Series
RthJC (DC) = 0.25 K/ W
190
180
Conduction Angle
170
160
30°
150
60°
90°
120°
180°
140
0
20
40
60
80 100 120 140 160
200
45L..., 150... Series
R thJC (DC) = 0.25 K/ W
190
180
Conduction Period
170
160
30°
180°
140
0
50
Average Forward Current (A)
250
1
K/ W
.1
=0
SA
R th
K/ W
0.2
W
K/
0.3
W
K/
K/
W
K/
W
RMS Limit
100
elt
-D
1.5
K/
W
80
aR
Maximum Average Forward Power Loss (W)
200
4
0.
0.
8
W
K/
120
6
0.
140
150
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
160
100
DC
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
180
60°
90°
120°
150
2K
/W
60
Conduction Angle
40
45L..., 150... Series
TJ = 200°C
20
3 K/
W
0
0
40
80
120
160
25
Average Forward Current (A)
50
75
100
125
150
175
200
Maximum Allowable Ambient Temperature (°C)
250
R th
2
0.
SA
K/
W
W
K/
.1
=0
W
K/
a
e lt
-D
0. 8
K/
W
1K
/W
RMS Limit
1.5
Conduc tion Period
45L..., 150... Series
TJ = 200°C
50
2 K/
R
100
W
K/
150
0.
6
W
K/
200
4
0.
DC
180°
120°
90°
60°
30°
3
0.
Maximum Average Forward Power Loss (W)
Fig. 3 - Forward Power Loss Characteristics
K/ W
W
3 K/W
0
0
50
100
150
200
Average Forward Current (A)
250
25
50
75
100
125
150
175
200
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
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VS-45L(R), VS-150K(R), VS-150KS(R) Series
3500
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Ra ted Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 200°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
3000
2500
2000
1500
1000
45L..., 150... Series
500
1
10
100
4000
3500
3000
Maximum Non Repetitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ = 200°C
No Voltage Reapplied
Rated VRRM Reapplied
2500
2000
1500
1000
45L..., 150... Series
500
0.01
Numb er Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
1000
TJ = 25°C
100
TJ = 200°C
45L...,150... Series
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
Transient Thermal Impedance ZthJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.25 K7W
(DC Operation)
0.1
45L..., 150... Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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VS-45L(R), VS-150K(R), VS-150KS(R) Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
45
L
R
60
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
45 = standard version
3
-
L = essential part number
4
-
R = stud reverse polarity (anode to stud)
None = stud normal polarity (cathode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
Device code
VS-
15
0
K
R
60
A
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
15 = essential part number
3
-
0 = standard device
4
-
Case style:
K = DO-8 (DO-205AA)
KS = B-42
5
-
R = stud reverse polarity (anode to stud)
None = stud normal polarity (cathode to stud)
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
7
-
A = essential part number for 150K (omitted for 150KS)
Note
• For metric device M12 x 1.75 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95314
Revision: 11-Jan-18
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Outline Dimensions
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Vishay Semiconductors
DO-205AC (DO-30), DO-205AA (DO-8)
and B-42 for 45L(R), 150K(R) and 150KS(R) Series
DIMENSIONS FOR 45L(R) SERIES - DO-205AC (DO-30) in millimeters (inches)
15.30 (0.60) MAX.
Ø 7.39 (0.297)
Ø 6.50 (0.255)
8.30 (0.327)
7.55 (0.297)
17.30 (0.681)
11.70 (0.460)
Ø 23.30 (0.92) MAX.
137.67 (5.42)
132.58 (5.22)
23.30 (0.917)
MAX.
8.48 (0.333)
7.88 (0.310)
17.0 (0.67)
15.0 (0.59)
27.00 (1.06) MAX.
Across flats
1/2"-20UNF-2A
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Outline Dimensions
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Vishay Semiconductors
DIMENSIONS FOR 150K(R) SERIES - DO-205AA (DO-8) in millimeters (inches)
15.30 (0.60) MAX.
Ø 7.39 (0.297)
Ø 6.50 (0.255)
17.30 (0.681)
11.70 (0.460)
Ø 23.30 (0.92) MAX.
124.00 (4.881)
111.13 (4.375)
23.30 (0.917)
MAX.
8.48 (0.333)
7.88 (0.310)
17.0 (0.67)
15.0 (0.59)
27.00 (1.06) MAX.
Across flats
3/8"-24UNF-2A (1)
Note
(1) For metric device M12 x 1.75 contact factory
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Outline Dimensions
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DIMENSIONS FOR 150KS(R) SERIES - B-42 in millimeters (inches)
27.17 (1.070)
26.22 (1.032)
2.03 (0.080)
1.27 (0.050)
21.47 (0.843)
21.20 (0.835)
10.2 (0.401)
9.2 (0.362)
Ø 4.34 (0.171)
Ø 4.09 (0.161)
4.08 (0.161)
3.70 (0.146)
9.50 (0.374)
7.50 (0.295)
37.13 (1.462)
33.83 (1.332)
18.00 (0.708)
14.00 (0.551)
6.76 (0.266)
6.25 (0.246)
12.50 (0.492)
11.70 (0.460)
3/8"-24UNF-2A
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