VS-15ETH03SHM3
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Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
Base
cathode
2
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
D2PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
3
Anode
1
N/C
• Meets JESD 201 class 1A whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
IF(AV)
15 A
VR
300 V
VF at IF
0.85 V
trr (typ.)
40 ns
TJ max.
175 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
Vishay Semiconductors 300 V series are the state of the art
hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and hyperfast
recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
300
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 142 °C
15
Non-repetitive peak surge current
IFSM
TJ = 25 °C
140
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
300
-
-
IF = 15 A
-
1.05
1.25
IR = 100 μA
IF = 15 A, TJ = 125 °C
-
0.85
1.00
VR = VR rated
-
0.05
40
TJ = 125 °C, VR = VR rated
-
12
400
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 300 V
-
45
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Revision: 15-Oct-2018
Document Number: 96231
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
40
TJ = 25 °C
-
32
-
TJ = 125 °C
-
45
-
-
2.4
-
-
6.1
-
IF = 15 A
dIF/dt = -200 A/μs
VR = 200 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
TJ = 25 °C
-
38
-
TJ = 125 °C
-
137
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature
range
TJ, TStg
Thermal resistance, junction to case per leg
RthJC
-
1.02
2.0
Thermal resistance, junction to ambient per leg
RthJA
Typical socket mount
-
-
70
RthCS
Mounting surface, flat, smooth, and
greased
-
0.2
-
Thermal resistance, case to heatsink
Weight
Mounting torque
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
15ETH03SH
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.4
-
Case style D2PAK (TO-263AB)
Marking device
°C/W
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
250
300
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 15-Oct-2018
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CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.001
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
22
20
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
DC
160
150
Square wave (D = 0.50)
Rated VR applied
140
130
See note (1)
18
RMS limit
16
14
12
D = 0.01
10
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
8
6
4
DC
2
120
0
0
5
10
15
20
25
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Oct-2018
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Vishay Semiconductors
1000
100
IF = 15 A, TJ = 25 °C
trr (ns)
Qrr (nC)
IF = 15 A, TJ = 125 °C
100
IF = 15 A, TJ = 25 °C
IF = 15 A, TJ = 125 °C
10
100
10
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 15-Oct-2018
Document Number: 96231
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
H
03
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (15 A)
3
-
E = single diode
4
-
T = D2PAK (TO-263AB)
5
-
H = hyperfast rectifier
6
-
Voltage rating (03 = 300 V)
7
-
S = D2PAK
8
-
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D2PAK package)
TRR = tape and reel (right oriented, for D2PAK package)
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-15ETH03SHM3
50
1000
Antistatic plastic tube
VS-15ETH03STRRHM3
800
800
13" diameter reel
VS-15ETH03STRLHM3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?95032
SPICE model
www.vishay.com/doc?96567
Revision: 15-Oct-2018
Document Number: 96231
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Revision: 09-Jul-2021
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Document Number: 91000