VS-15ETH06-M3

VS-15ETH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® FEATURES 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 • Designed and qualified according to JEDEC®-JESD 47 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2L TO-220AC Base cathode 2 1 Cathode DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 3 Anode PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.3 V trr typ. 22 ns TJ max. 175 °C Package 2L TO-220AC Circuit configuration Single   ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 140 °C 15 Non-repetitive peak surge current IFSM TJ = 25 °C 120 Peak repetitive forward current IFM 30 TJ, TStg -65 to +175 Operating junction and storage temperatures A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 15 A - 1.8 2.2 IF = 15 A, TJ = 150 °C - 1.3 1.6 VR = VR rated - 0.2 50 TJ = 150 °C, VR = VR rated - 30 500 UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 18-Jun-2019 Document Number: 96174 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 22 30 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 28 35 TJ = 25 °C - 29 - - 75 - - 3.5 - - 7 - TJ = 125 °C Peak recovery current IF = 15 A dIF/dt = 200 A/μs VR = 390 V TJ = 25 °C IRRM TJ = 125 °C ns A - 57 - - 300 - - 51 - - 20 - A - 580 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 1.0 1.3 Thermal resistance, junction-to-ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TJ = 25 °C UNITS TJ = 125 °C IF = 15 A dIF/dt = 800 A/μs VR = 390 V TJ = 125 °C Qrr nC ns THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Marking device Case style 2L TO-220AC 15ETH06 1000 100 TJ = 175 °C TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 0.5 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) °C/W 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.001 0 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-Jun-2019 Document Number: 96174 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) 180 35 170 30 160 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 150 Square wave (D = 0.50) 80 % rated Vr applied 140 130 120 See note (1) 110 25 RMS limit 20 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 15 10 DC 5 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 18-Jun-2019 Document Number: 96174 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06-M3 www.vishay.com 100 Vishay Semiconductors 1000 IF = 30 A VR = 390 V TJ = 125 °C TJ = 25 °C IF = 15 A 80 800 60 600 IF = 30 A Qrr (nC) trr (ns) IF = 15 A 40 20 400 200 VR = 390 V TJ = 125 °C TJ = 25 °C 0 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 18-Jun-2019 Document Number: 96174 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETH06-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 E T H 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (15 = 15 A) 3 - E = single diode 4 - T = TO-220, D2PAK (TO-263AB) 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-15ETH06-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96617 Revision: 18-Jun-2019 Document Number: 96174 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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