VS-15ETL06HN3
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Vishay Semiconductors
Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC,
15 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
2
• 175 °C operating junction temperature
• Low leakage current
3
TO-220AC
• AEC-Q101 qualified
1
• Meets JESD 201 class 2 whisker test
Base
cathode
2
1
Cathode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
3
Anode
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VS-15ETL06HN3
PRODUCT SUMMARY
Package
TO-220AC
IF(AV)
15 A
VR
600 V
VF at IF
0.85 V
trr typ.
60 ns
TJ max.
175 °C
Diode variation
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 153 °C
15
Non-repetitive peak surge current
IFSM
TJ = 25 °C
250
Peak repetitive forward current
IFM
30
TJ, TStg
-65 to +175
Operating junction and storage temperatures
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 15 A
MIN.
TYP.
MAX.
600
-
-
-
0.99
1.05
0.92
IF = 15 A, TJ = 150 °C
-
0.85
VR = VR rated
-
0.1
10
TJ = 150 °C, VR = VR rated
-
15
120
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
μA
Revision: 20-Oct-16
Document Number: 94816
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VS-15ETL06HN3
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DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
60
-
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
-
190
-
TJ = 25 °C
-
220
-
TJ = 125 °C
UNITS
ns
-
320
-
-
19
-
-
26
-
TJ = 25 °C
-
2.2
-
TJ = 125 °C
-
4.3
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
1.1
1.4
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth,
and greased
-
0.5
-
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Peak recovery current
IRRM
Reverse recovery charge
Qrr
IF = 15 A
TJ = 25 °C
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 390 V
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
Weight
Mounting torque
Marking device
Case style TO-220AC
°C/W
15ETL06H
100
100
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
10
1
0.4
IR - Reverse Current (µA)
IF - Instantaneous Forward
Current (A)
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 20-Oct-16
Document Number: 94816
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CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
DC
0.001
t1
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
25
RMS limit
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
DC
160
150
140
Square wave (D = 0.50)
80 % rated VR applied
130
20
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
10
5
DC
See note (1)
120
0
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 20-Oct-16
Document Number: 94816
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VS-15ETL06HN3
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500
Vishay Semiconductors
9000
IF = 30 A
8000
IF = 15 A
300
Qrr (nC)
trr (ns)
400
200
7000
IF = 30 A
6000
IF = 15 A
5000
4000
3000
100
2000
VR = 390 V
TJ = 125 °C
TJ = 25 °C
VR = 390 V
TJ = 125 °C
TJ = 25 °C
1000
0
100
0
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 20-Oct-16
Document Number: 94816
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VS-15ETL06HN3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
L
06
H
N3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (15 = 15 A)
3
-
E = single diode
4
-
T = TO-220
5
-
L = ultralow VF hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
H = AEC-Q101 qualified
8
-
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-15ETL06HN3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95221
Part marking information
www.vishay.com/doc?95068
SPICE model
www.vishay.com/doc?96051
Revision: 20-Oct-16
Document Number: 94816
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
2
3
D
D
A
L1
E
A1
(6)
H1
(7)
(6) D
1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
D1
1
2 3
Lead tip
L3
C
E1
(6)
L4
L
c
e1
A
Conforms to JEDEC® outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
NOTES
A
4.25
4.65
0.167
0.183
E1
6.86
8.89
0.270
0.350
6
A1
1.14
1.40
0.045
0.055
E2
-
0.76
-
0.030
7
A2
2.56
2.92
0.101
0.115
e1
4.88
5.28
0.192
0.208
b
0.69
1.01
0.027
0.040
H1
5.84
6.86
0.230
0.270
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
4
L
13.52
14.02
0.532
0.552
L1
3.32
3.82
0.131
0.150
4
L3
1.78
2.13
0.070
0.084
c
0.36
0.61
0.014
0.024
L4
0.76
1.27
0.030
0.050
c1
0.36
0.56
0.014
0.022
4
ØP
3.54
3.73
0.139
0.147
3
Q
2.60
3.00
0.102
0.118
D
14.85
15.25
0.585
0.600
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
6, 7
2
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Revision: 09-Sep-2019
Document Number: 95221
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000