VS-15ETL06PBF

VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 15 A FRED Pt® FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop 2 2 • 175 °C operating junction temperature 3 • Low leakage current 3 1 1 TO-220 FULL-PAK TO-220AC • Fully isolated package (VINS = 2500 VRMS) • UL E78996 approved Base cathode 2 • Designed and qualified JEDEC®-JESD 47 2 according to Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 Cathode 1 Cathode 3 Anode VS-15ETL06PbF VS-15ETL06-N3 3 Anode DESCRIPTION State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. VS-15ETL06FPPbF VS-15ETL06FP-N3 PRODUCT SUMMARY Package TO-220AC, TO-220FP IF(AV) 15 A VR 600 V VF at IF 0.85 V trr typ. 60 ns TJ max. 175 °C Diode variation Single die APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM Average rectified forward current IF(AV) Non-repetitive peak surge current IFSM Peak repetitive forward current Operating junction and storage temperatures TC = 154 °C VALUES UNITS 600 V 15 TC = 120 °C (FULL-PAK) TJ = 25 °C A 250 IFM 30 TJ, TStg -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 15 A MIN. TYP. MAX. 600 - - - 0.99 1.05 IF = 15 A, TJ = 150 °C - 0.85 0.92 VR = VR rated - 0.1 10 TJ = 150 °C, VR = VR rated - 15 120 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 20-Oct-16 Document Number: 94004 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 60 120 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 190 270 TJ = 25 °C - 220 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr UNITS ns - 320 - - 19 - - 26 - TJ = 25 °C - 2.2 - TJ = 125 °C - 4.3 - MIN. TYP. MAX. UNITS -65 - 175 °C - 1.0 1.3 - 3.0 3.5 IF = 15 A TJ = 25 °C dIF/dt = 200 A/μs TJ = 125 °C VR = 390 V A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance,  junction to case TEST CONDITIONS TJ, TStg RthJC (FULL-PAK) Thermal resistance,  junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance,  case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Case style TO-220AC Marking device °C/W g 15ETL06 Case style TO-220AC FULL-PAK 15ETL06FP 100 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 0.4 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.6 0.8 1.0 1.2 1.4 1.6 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 20-Oct-16 Document Number: 94004 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Revision: 20-Oct-16 Document Number: 94004 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors 25 RMS limit Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC 160 Square wave (D = 0.50) Rated VR applied 150 140 15 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 10 5 DC See note (1) 130 0 0 5 10 15 20 0 25 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Forward Power Loss Characteristics 180 500 160 400 IF = 30 A IF = 15 A DC 140 trr (ns) Allowable Case Temperature (°C) 20 120 Square wave (D = 0.50) 80 % rated VR applied 300 200 100 100 See note (1) 0 100 80 0 5 10 15 25 20 VR = 390 V TJ = 125 °C TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt 9000 Qrr (nC) 8000 7000 IF = 30 A 6000 IF = 15 A 5000 4000 3000 2000 VR = 390 V TJ = 125 °C TJ = 25 °C 1000 0 100 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC;  Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 20-Oct-16 Document Number: 94004 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Revision: 20-Oct-16 Document Number: 94004 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 E T L 06 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (15 = 15 A) 3 - E = single diode 4 - T = TO-220, D2PAK 5 - L = ultralow VF hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - None = TO-220AC FP = TO-220 FULL-PAK - 8 Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-15ETL06PbF 50 1000 Antistatic plastic tube VS-15ETL06-N3 50 1000 Antistatic plastic tube VS-15ETL06FPPbF 50 1000 Antistatic plastic tube VS-15ETL06FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-220AC www.vishay.com/doc?95221 TO-220FP www.vishay.com/doc?95005 TO-220ACPbF www.vishay.com/doc?95224 TO-220AC-N3 www.vishay.com/doc?95068 TO-220FPPbF www.vishay.com/doc?95009 TO-220FP-N3 www.vishay.com/doc?95440 TO-220AC www.vishay.com/doc?96051 TO-220FP www.vishay.com/doc?96052 Revision: 20-Oct-16 Document Number: 94004 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN.  90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000