VS-15ETU12-M3
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Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
• Ultrafast and soft recovery time
Base
cathode
2
2
• Optimized forward voltage drop
• 175 °C maximum operating junction temperature
• Polyimide passivation
1
3
1
Cathode
• Rugged design
3
Anode
• Good thermal performance
TO-220AC 2L
• Meets JESD 201 class 1A whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
IF(AV)
15 A
VR
1200 V
VF at IF at 125 °C
2.25 V
Ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop, recovery time, and
soft recovery.
trr
44 ns
TJ max.
175 °C
Package
TO-220AC 2L
Circuit configuration
Single
Polyimide passivated, planar structure, and the platinum
doped life time control guarantee, ruggedness, reliability
characteristics, and solid value position for efficiency and
thermal performance.
These devices are intended for use in boost stage in the
AC/DC section of SMPS, high frequency output rectification
of battery charger, inverters of solar inverters, or as
freewheeling diodes in motor drive.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1200
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 115 °C, D = 0.50
15
Non-repetitive peak surge current
IFSM
TC = 25 °C, tp = 10 ms, sine wave
150
Repetitive peak forward current
Operating junction and storage temperature
A
IFRM
30
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 15 A
-
2.3
2.78
2.7
IR = 250 μA
IF = 15 A, TJ = 125 °C
-
2.25
VR = VR rated
-
-
80
TJ = 125 °C, VR = VR rated
-
-
150
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
13
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
μA
Revision: 23-Nov-17
Document Number: 96207
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
44
-
TJ = 25 °C
-
167
-
TJ = 125 °C
-
248
-
-
6
-
-
9
-
IF = 15 A
dIF/dt = 100 A/μs
VR = 390 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
TJ = 25 °C
-
507
-
TJ = 125 °C
-
1110
-
MIN.
TYP.
MAX.
-
1.1
1.3
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction to case
TEST CONDITIONS
RthJC
Thermal resistance, junction to ambient
RthJA
Typical socket mount
-
54
60
Thermal resistance, case to heat sink
RthCS
Mounting surface, flat, smooth, and greased
-
0.2
0.4
Weight
Mounting torque
Marking device
-
g
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
-55
-
175
°C
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
0.2
-
15ETU12
TJ, TStg
100
°C/W
-
Case style: TO-220AC 2L
Maximum junction and storage
temperature range
UNITS
TJ = 175 °C
10
1
TJ = 125 °C
TJ = 25 °C
0.1
TJ = 175 °C
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
1.0
2.0
3.0
4.0
5.0
6.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 23-Nov-17
Document Number: 96207
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CT - Junction Capacitance (pF)
1000
100
10
1
0
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
0.1
DC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
70
180
Average Power Loss (W)
Allowable Solder Pad Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
160
DC
140
120
Square wave (D = 0.50)
rated VR applied
100
RMS limit
60
50
40
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
30
20
10
0
80
0
2
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 23-Nov-17
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250
2000
TJ = 125 °C
TJ = 25 °C
1800
30 A
1600
150
Qrr (nC)
trr (ns)
200
30 A
15 A
1400
15 A
1200
1000
100
8A
8A
800
50
600
100
150
200
250
300
350
400
450
500
100
150
200
250
300
350
400
450
500
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 10 - Typical Stored Charge vs. dIF/dt
350
20
TJ = 25 °C
TJ = 125 °C
300
15
Irec (A)
trr (ns)
250
30 A
200
30 A
15 A
10
8A
15 A
150
8A
5
100
50
0
100
150
200
250
300
350
400
450
500
100
150
200
250
300
350
400
450
500
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 11 - Typical Reverse Current vs. dIF/dt
1000
25
TJ = 125 °C
20
30 A
Irec (A)
Qrr (nC)
800
15 A
600
30 A
15 A
15
8A
8A
400
10
TJ = 25 °C
200
5
100
150
200
250
300
350
400
450
500
100
150
200
250
300
350
400
450
500
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 9 - Typical Stored Charge vs. dIF/dt
Fig. 12 - Typical Reverse Current vs. dIF/dt
Revision: 23-Nov-17
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(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 13 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
15
E
T
U
12
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (15 = 15 A)
3
-
E = single
4
-
Package:
T = TO-220AC 2L
4
5
-
U = ultrafast recovery
6
-
Voltage rating (12 = 1200 V)
7
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-15ETU12-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96156
Part marking information
www.vishay.com/doc?95391
Revision: 23-Nov-17
Document Number: 96207
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Outline Dimensions
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Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
(H1)
H1
C
D2
(6) D
2
D
D
L1 (2)
C
(6)
c
2xb
D1
2 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AC
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96156
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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