VS-15ETX06S-M3

VS-15ETX06S-M3, VS-15ETX06-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® FEATURES • Benchmark ultralow forward voltage drop • Hyperfast recovery time • Low leakage current 2 • 175 °C operating junction temperature 1 1 3 D2PAK (TO-263AB) 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C TO-262AA 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base Cathode 2 2 DESCRIPTION / APPLICATIONS 3 1 3 Anode 1 N/C State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. N/C Anode VS-15ETX06-1-M3 VS-15ETX06S-M3 PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.5 V trr (typ.) 18 ns TJ max. 175 °C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 133 °C 15 Non-repetitive peak surge current IFSM TJ = 25 °C 170 Peak repetitive forward current IFM 30 TJ, TStg -65 to +175 Operating junction and storage temperatures A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 2.3 3.2 IR = 100 μA IF = 15 A, TJ = 150 °C - 1.5 1.8 VR = VR rated - 0.1 50 TJ = 150 °C, VR = VR rated - 40 300 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 21-Dec-2021 Document Number: 96302 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETX06S-M3, VS-15ETX06-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 20 32 TJ = 25 °C - 22 - TJ = 125 °C UNITS ns - 52 - - 2.4 - - 5.1 - TJ = 25 °C - 25 - TJ = 125 °C - 150 - - 37 - ns - 16 - A - 350 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case per leg RthJC - 1.0 1.3 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Peak recovery current IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge IF = 15 A dIF/dt = 200 A/μs VR = 390 V TJ = 25 °C TJ = 125 °C IF = 15 A dIF/dt = 800 A/μs VR = 390 V TJ = 125 °C Qrr A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight 6.0 (5.0) Mounting torque Case style D2PAK (TO-263AB) 15ETX06S Case style TO-262AA 15ETX06-1 g 1000 100 TJ = 175 °C IR - Reverse Current (µA) IF - InstantaneousForward Current (A) Marking device °C/W 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Dec-2021 Document Number: 96302 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETX06S-M3, VS-15ETX06-1-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 1 100 0 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) 180 40 170 35 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 160 150 DC 140 130 Square wave (D = 0.50) Rated VR applied 120 See note (1) 30 25 RMS limit 20 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 15 10 5 DC 0 110 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 21-Dec-2021 Document Number: 96302 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETX06S-M3, VS-15ETX06-1-M3 www.vishay.com Vishay Semiconductors 70 450 VR = 390 V TJ = 125 °C TJ = 25 °C VR = 390 V TJ = 125 °C TJ = 25 °C 400 350 50 IF = 30 A Qrr (nC) 300 trr (ns) IF = 15 A 30 250 IF = 30 A 200 IF = 15 A 150 IF = 30 A 100 50 IF = 15 A 10 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 21-Dec-2021 Document Number: 96302 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETX06S-M3, VS-15ETX06-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 E T X 06 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (15 A) 3 - E = single diode 4 - T = TO-220, D2PAK (TO-263AB) 5 - X = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - S = D2PAK (TO-263AB) 8 - None = tube (50 pieces) TRL -M3 8 9 -1 = TO-262AA TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package) TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY VS-15ETX06S-M3 50 PACKAGING DESCRIPTION Antistatic plastic tubes VS-15ETX06STRR-M3 800 13" diameter plastic tape and reel VS-15ETX06STRL-M3 800 13" diameter plastic tape and reel VS-15ETX06-1-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262 www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262 www.vishay.com/doc?95443 www.vishay.com/doc?96424 Revision: 21-Dec-2021 Document Number: 96302 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262AA DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 2 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.), L1 (max.), L2 (min., max.) Revision: 30-Nov-17 Document Number: 96165 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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