VS-15TQ060-M3

VS-15TQ060-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 • 150 °C TJ operation • Very low forward voltage drop • High frequency operation 1 Cathode 2L TO-220AC 3 Anode • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 15 A VR 60 V VF at IF 0.56 V IRM typ. 45 mA at 125 °C TJ max. 150 °C DESCRIPTION EAS 6 mJ Package 2L TO-220AC Circuit configuration Single The VS-15TQ060... Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 15 Apk, TJ = 125 °C TJ Range VALUES UNITS 15 A 60 V 1000 A 0.56 V -55 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-15TQ060-M3 UNITS 60 V VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform 15 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1000 UNITS A 260 6 mJ 1.50 A Revision: 07-May-2020 Document Number: 96290 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop See fig. 1 VFM (1) 30 A 15 A 30 A Maximum reverse leakage current Typical reverse leakage current IRM (1) IRM (1) TJ = 25 °C TJ = 125 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR VR = Rated VR Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.62 0.82 V 0.56 0.71 0.80 mA 160 45 mA 720 pF 8 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 3.25 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device °C/W Case style 2L TO-220AC (JEDEC®) 15TQ060 Revision: 07-May-2020 Document Number: 96290 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060-M3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 0.4 0.8 1.2 1.6 0 2.0 10 VFM - Forward Voltage Drop (V) 30 20 50 40 60 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.01 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 07-May-2020 Document Number: 96290 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060-M3 Vishay Semiconductors 150 14 140 12 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 130 120 110 Square wave (D = 0.50) 80 % rated VR applied 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 8 RMS limit 6 4 DC 2 See note (1) 0 80 0 5 10 15 20 0 25 2 4 6 8 10 12 14 16 18 20 22 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 07-May-2020 Document Number: 96290 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 T Q 060 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (15 = 15 A) 3 - Package: T = TO-220 4 - Schottky “Q” series 5 - Voltage rating (060 = 60 V) 6 - Environmental digit -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-15TQ060-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?95600 Revision: 07-May-2020 Document Number: 96290 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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