VS-161MT180C

VS-161MT...C Series www.vishay.com Vishay Semiconductors Three Phase Bridge, 160 A (Power Modules) FEATURES • Blocking voltage up to 1800 V • High surge capability • High thermal conductivity package, electrically insulated case • Excellent power volume ratio • 3600 VRMS isolating voltage • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MTC DESCRIPTION PRIMARY CHARACTERISTICS IO 160 A at 118 °C VRRM 1600 V to 1800 V Package MTC Circuit configuration Three phase bridge A range of extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO (1) TC IFSM I2t VALUES UNITS 257 A 85 °C 50 Hz 1540 60 Hz 1610 50 Hz 11 860 60 Hz 10 825 I2√t 118 580 A A2s A2√s VRRM Range 1600 to 1800 V TStg Range -40 to +125 °C TJ Range -40 to +150 °C Note (1) Maximum output current must be limited to 220 A to do not exceed the maximum temperature of terminals ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-161MT...C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 160 1600 1700 180 1800 1900 IRRM MAXIMUM AT TJ = MAXIMUM mA 12 Revision: 16-Feb-2022 Document Number: 96990 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-161MT...C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS 120° rect. conduction angle t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms I2√t A 118 °C No voltage reapplied 1540 100 % VRRM reapplied 1295 No voltage reapplied UNITS 160 1610 A 1355 Initial TJ = TJ maximum 11 860 10 825 8385 100 % VRRM reapplied 7620 t = 0.1 ms to 10 ms, no voltage reapplied 118 580 t = 8.3 ms Maximum I2√t for fusing VALUES Low level value of threshold voltage VFT(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum 0.81 High level value of threshold voltage VFT(TO)2 (I > π x IF(AV)), TJ maximum 0.98 Low level value of forward slope resistance rf1 16.7 % x π x IF(AV) < I < π x IF(AV), TJ maximum 3.89 High level of forward slope resistance rf2 (I > π x IF(AV)), TJ maximum 3.68 Maximum forward voltage drop VFM Ipk = 300 A, TJ = 25 °C, per junction 1.85 RMS isolation voltage VISOL TJ = 25 °C, all terminal shorted f = 50 Hz, t = 1 s 3600 A2s A2√s V mΩ V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating TEST CONDITIONS VALUES TJ -40 to +150 Maximum storage temperature TStg -40 to +125 Maximum thermal resistance, junction to case RthJC Typical thermal resistance, case to heatsink Mounting torque ± 15 % RthCS to heatsink DC operation per module 0.058 DC operation per junction 0.35 Per module Mounting surface smooth, flat, and greased 0.03 Approximate weight °C °C/W 5 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. Lubricated threads. to terminal UNITS Nm 5 235 g ΔR CONDUCTION PER JUNCTION DEVICES VS-161MT...C Series SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.054 0.061 0.076 0.107 0.165 0.039 0.064 0.083 0.111 0.167 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 16-Feb-2022 Document Number: 96990 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-161MT...C Series Vishay Semiconductors 150 Instantaneous Forward Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 140 130 120 120° (Rect.) 110 100 90 80 70 60 50 0 40 80 1000 100 TJ = 150 °C TJ = 25 °C 10 Per junction 1 0 120 160 200 240 280 320 360 Total Output Current (A) TJ = 150 °C 120 ° (Rect.) 0 40 80 120 160 200 1.0 1.5 2.0 2.5 3.0 Fig. 2 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) Maximum Total Power Loss (W) Fig. 1 - Current Ratings Characteristics 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0.5 Instantaneous Forward Voltage (V) 240 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 RthSA = 0.1 °C/W 0.15 °C/W 0.2 °C/W 0.25 °C/W 0.3 °C/W 0.4 °C/W 0.5 °C/W 0.7 °C/W 0.9 °C/W 1.1 °C/W 2.0 °C/W 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 Per junction 300 0.01 Maximum non-repetitive surge current vs. pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 0.1 1 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 3 - Total Power Loss Characteristics 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 Per junction 300 0.01 Maximum non-repetitive surge current vs. pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 0.1 1 Pulse Train Duration (s) Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Revision: 16-Feb-2022 Document Number: 96990 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-161MT...C Series ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 10 Steady state value Rth JC = 0.35 °C/W per junction (DC operating) 1 0.1 0.01 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC Characteristic ORDERING INFORMATION TABLE Device code VS- 16 1 MT 160 1 2 3 4 5 C 1 - Vishay Semiconductors product 2 - Current rating code: 16 = 160 A (average) 3 - Circuit configuration (three phase diodes bridge) 4 - Package indicator 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) CIRCUIT CONFIGURATION + ~ - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96003 Revision: 16-Feb-2022 Document Number: 96990 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTC DIMENSIONS in millimeters 5-M6 3 30 Screwing depth max. 10 52 13 Ø6 + 54 27 6.5 .5 - 25 65 72 80 94 Revision: 03-Jun-16 Document Number: 96003 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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