VS-16CDH02HM3/I

VS-16CDH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 8 A FRED Pt® FEATURES eSMP® Series SMPD (TO-263AC) • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, telecom, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2x8A VR 200 V VF at IF 0.77 V trr 27 ns TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration Common cathode MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current TEST CONDITIONS VALUES UNITS 200 V VRRM per device per diode per device per diode 16 Tsolder pad = 155 °C IF(AV) IFSM 8 A 190 TJ = 25 °C, 6 ms square pulse 100 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance, per diode CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 8 A - 0.93 1.03 IF = 8 A, TJ = 150 °C - 0.77 0.87 IR = 100 μA VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - 6 100 VR = 200 V - 23 - UNITS V μA pF Revision: 21-Jan-2021 Document Number: 95813 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CDH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 27 - IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 23 - - 35 - - 2.8 - - 5 - TJ = 25 °C - 30 - TJ = 125 °C - 90 - MIN. TYP. MAX. UNITS TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr UNITS IF = 8 A, dIF/dt = 200 A/μs, VR = 160 V TJ = 25 °C TJ = 125 °C ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -55 - +175 °C Thermal resistance, per diode junction to mount RthJM - 1.8 2.5 °C/W Approximate weight Case style SMPD (TO-263AC) 100 oz. 16CDH02 TJ = 175 °C TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C 0.1 g 0.02 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.55 10 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 95813 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CDH02HM3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 180 12 175 10 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 170 165 DC 160 Square wave (D = 0.50) 80 % rated VR applied 155 150 RMS limit 8 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 6 4 2 See note (1) 0 145 0 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 12 14 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 21-Jan-2021 Document Number: 95813 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CDH02HM3 www.vishay.com Vishay Semiconductors 45 180 40 160 140 35 125 °C 125 °C 120 Qrr (nC) trr (ns) 30 25 20 100 80 25 °C 60 25 °C 15 40 10 20 5 0 100 1000 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 21-Jan-2021 Document Number: 95813 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CDH02HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 C D H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (16 A) 3 - Circuit configuration: C = common cathode 4 - 5 - D = SMPD package Process type, H = hyperfast recovery 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16CDH02HM3/I 2000 2000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95604 Part marking information www.vishay.com/doc?95566 Packaging information www.vishay.com/doc?88869 Revision: 21-Jan-2021 Document Number: 95813 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-263AC (SMPD) DIMENSIONS in inches (millimeters) TO-263AC (SMPD)    5()            WR   WR             120     Mounting Pad Layout 0,1       5()   120   5() 0,1 Revision: 02-Jun-14     Document Number: 95604 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000