VS-16CTQ...HN3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 8 A
FEATURES
Base 2
common
cathode
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
TO-220AB
1
2
3
Anode
Anode
2
1 Common 3
cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2x8A
VR
60 V, 80 V, 100 V
VF at IF
0.58 V
IRM max.
7 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
7.5 mJ
• Meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform
VRRM
VALUES
UNITS
16
A
60 to 100
V
IFSM
tp = 5 μs sine
850
A
VF
8 Apk, TJ = 125 °C (per leg)
0.58
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak
reverse voltage
VS-16CTQ060HN3
VS-16CTQ080HN3
VS-16CTQ100HN3
UNITS
60
80
100
V
VR
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 148 °C, rectangular waveform
VALUES
UNITS
8
per leg
per device
A
16
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
Repetitive avalanche current per leg
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
10 ms sine or 6 ms rect. pulse
850
A
275
Revision: 05-Mar-14
Document Number: 94848
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VS-16CTQ...HN3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
16 A
8A
TJ = 125 °C
16 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
VR = rated VR
TJ = 125 °C
TJ = TJ maximum
VALUES
UNITS
0.72
0.88
V
0.58
0.69
0.55
7.0
mA
0.415
V
Forward slope resistance
rt
11.07
m
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
500
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/µs
VALUES
UNITS
- 55 to 175
°C
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Maximum thermal resistance
junction to case per package
RthJC
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
3.25
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
°C/W
1.63
0.50
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf ·in)
16CTQ060H
Marking device
Case style TO-220AB
16CTQ080H
16CTQ100H
Revision: 05-Mar-14
Document Number: 94848
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
Vishay Semiconductors
1000
100
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
0.001
1
0.0001
0.5
0
2.0
1.5
1.0
0
2.5
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
20
0
60
40
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 05-Mar-14
Document Number: 94848
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
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Vishay Semiconductors
7
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
DC
160
150
Square wave (D = 0.50)
80 % rated VR applied
140
130
120
110
See note (1)
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
6
5
4
RMS limit
3
DC
2
1
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR applied
Revision: 05-Mar-14
Document Number: 94848
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
16
C
T
Q
100
H
N3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (16 = 16 A)
3
-
Circuit configuration
C = Common cathode
-
4
Package
T = TO-220
060 = 60 V
080 = 80 V
100 = 100 V
5
-
Schottky “Q” series
6
-
Voltage rating
7
-
H = AEC-Q101 qualified
8
-
Environmental digit
N3 = Halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-16CTQ060HN3
50
1000
Antistatic plastic tube
VS-16CTQ080HN3
50
1000
Antistatic plastic tube
VS-16CTQ100HN3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?95222
TO-220AB -N3
www.vishay.com/doc?95028
www.vishay.com/doc?95279
Revision: 05-Mar-14
Document Number: 94848
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
(b, b2)
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
A1
1.14
1.40
0.045
0.055
NOTES
SYMBOL
MILLIMETERS
INCHES
NOTES
MIN.
MAX.
MIN.
MAX.
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
A2
2.56
2.92
0.101
0.115
E1
6.86
8.89
0.270
0.350
6
b
0.69
1.01
0.027
0.040
E2
-
0.76
-
0.030
7
b1
0.38
0.97
0.015
0.038
4
e
2.41
2.67
0.095
0.105
b2
1.20
1.73
0.047
0.068
e1
4.88
5.28
0.192
0.208
b3
1.14
1.73
0.045
0.068
4
H1
5.84
6.86
0.230
0.270
c
0.36
0.61
0.014
0.024
L
13.52
14.02
0.532
0.552
c1
0.36
0.56
0.014
0.022
4
L1
3.32
3.82
0.131
0.150
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
D1
8.38
9.02
0.330
0.355
Q
2.60
3.00
0.102
0.118
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package
outline
Revision: 06-Mar-2020
Document Number: 95222
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Revision: 01-Jan-2023
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Document Number: 91000