VS-16EDH02HM3/I

VS-16EDH02HM3/I

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-263(D²Pak)

  • 描述:

    VS-16EDH02HM3/I

  • 数据手册
  • 价格&库存
VS-16EDH02HM3/I 数据手册
VS-16EDH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 16 A FRED Pt® FEATURES eSMP® Series SMPD (TO-263AC) • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specified for output and snubber operation • Low forward voltage drop • Low leakage current 1 2 Top View • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Bottom View • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. LINKS TO ADDITIONAL RESOURCES 3D 3D The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. 3D Models These devices are intended for use in the output rectification stage of SMPS, telecom, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. PRIMARY CHARACTERISTICS IF(AV) 16 A VR 200 V VF at IF 0.75 V trr 32 ns TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration Single Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) Tsolder pad = 153 °C 16 Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse 250 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 16 A - 0.91 1.0 IF = 16 A, TJ = 150 °C - 0.75 0.84 IR = 100 μA VR = VR rated - - 15 TJ = 150 °C, VR = VR rated - 20 500 VR = 200 V - 60 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 95817 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr Reverse recovery charge MAX. 32 - - - 32 TJ = 25 °C - 26 - IF = 16 A, dIF/dt = 200 A/μs, VR = 160 V TJ = 25 °C IRRM TYP. - IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 125 °C Peak recovery current MIN. TJ = 125 °C - 40 - 2.8 - - 6 - UNITS ns A TJ = 25 °C - 37 - TJ = 125 °C - 125 - MIN. TYP. MAX. UNITS TJ, TStg -55 - +175 °C RthJM - 1.1 1.4 °C/W Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to mount TEST CONDITIONS Approximate weight Case style SMPD (TO-263AC) 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C 0.1 g 0.02 oz. 16EDH02 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.55 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 95817 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDH02HM3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 25 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC 160 Square wave (D = 0.50) 80 % rated VR applied 150 20 RMS limit 15 D = 0.01 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 5 See note (1) 0 140 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 Document Number: 95817 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDH02HM3 www.vishay.com Vishay Semiconductors 300 60 250 50 125 °C 200 Qrr (nC) trr (ns) 40 125 °C 30 150 25 °C 100 25 °C 20 50 10 0 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 28-Jan-2021 Document Number: 95817 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDH02HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 E D H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (16 A) 3 - Circuit configuration: E = single die 4 - D = SMPD package 5 - Process type, H = hyperfast recovery 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16EDH02HM3/I 2000 2000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95604 Part marking information www.vishay.com/doc?95566 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96785 Revision: 28-Jan-2021 Document Number: 95817 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
VS-16EDH02HM3/I 价格&库存

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VS-16EDH02HM3/I

库存:0

VS-16EDH02HM3/I
  •  国内价格 香港价格
  • 1+26.038511+3.37933
  • 10+16.8289910+2.18410
  • 50+12.8525750+1.66803
  • 100+11.56847100+1.50138
  • 500+9.31850500+1.20938

库存:2106

VS-16EDH02HM3/I

库存:2000

VS-16EDH02HM3/I
  •  国内价格 香港价格
  • 2000+7.987052000+1.03658
  • 6000+7.215746000+0.93648

库存:2106

VS-16EDH02HM3/I
    •  国内价格
    • 1+9.52560
    • 10+9.36360
    • 30+9.25560

    库存:10

    VS-16EDH02HM3/I
    •  国内价格
    • 1+15.36777
    • 10+10.15734
    • 100+7.25867
    • 250+6.61186
    • 500+6.14471
    • 1000+5.96504

    库存:0