VS-16EDU06-M3/I

VS-16EDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt® FEATURES eSMP® Series SMPD (TO-263AC) • Ultrafast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • For PFC CRM, snubber operation • Low forward voltage drop • Low leakage current 1 2 Top View • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Bottom View • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 K Anode 2 Cathode DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time, and soft recovery. 3D 3D 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS IF(AV) These devices are intended for use in PFC, boost, lighting, in the AC/DC section of SMPS, freewheeling and clamp diodes. 16 A VR 600 V VF at IF 0.91 V trr 55 ns TJ max. 175 °C Package SMPD (TO-263AC) Circuit configuration Single Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) Tsolder pad = 141 °C 16 Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse 160 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 16 A - 1.04 1.25 IF = 16 A, TJ = 150 °C - 0.91 1.1 IR = 100 μA VR = VR rated - - 15 TJ = 150 °C, VR = VR rated - 70 300 VR = 600 V - 16 - UNITS V μA pF Revision: 14-Apr-2022 Document Number: 95818 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr MAX. 55 - - - 55 TJ = 25 °C - 100 - UNITS ns - 150 - - 20 - - 27 - TJ = 25 °C - 1 - TJ = 125 °C - 2 - MIN. TYP. MAX. UNITS TJ, TStg -55 - +175 °C RthJM - 1.2 1.7 °C/W IF = 16 A, dIF/dt = 500 A/μs, VR = 400 V TJ = 25 °C IRRM Reverse recovery charge TYP. - IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 125 °C Peak recovery current MIN. TJ = 125 °C Qrr A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to mount TEST CONDITIONS Approximate weight 0.55 Case style SMPD (TO-263AC) 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C 0.1 g 16EDU06 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 14-Apr-2022 Document Number: 95818 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDU06-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 30 175 RMS limit 170 165 DC 160 155 150 Square wave (D = 0.50) 80 % rated VR applied 145 140 135 See note 25 20 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 15 10 5 (1) 0 130 0 (1) Average Power Loss (W) Allowable Case Temperature (°C) 180 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 14-Apr-2022 Document Number: 95818 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDU06-M3 www.vishay.com Vishay Semiconductors 3000 250 225 2500 200 Qrr (nC) trr (ns) 2000 125 °C 175 150 25 °C 125 125 °C 1500 25 °C 1000 100 500 75 50 0 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 14-Apr-2022 Document Number: 95818 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16EDU06-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 E D U 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (16 A) 3 - Circuit configuration: E = single die 4 - D = SMPD package 5 - Process type, U = ultrafast recovery 6 - Voltage code (06 = 600 V) 7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16EDU06-M3/I 2000 2000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95604 Part marking information www.vishay.com/doc?95566 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96771 Revision: 14-Apr-2022 Document Number: 95818 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-263AC (SMPD) DIMENSIONS in inches (millimeters) TO-263AC (SMPD)    5()            WR   WR             120     Mounting Pad Layout 0,1       5()   120   5() 0,1 Revision: 02-Jun-14     Document Number: 95604 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000