VS-6FL(R), VS-12FL(R), VS-16FL(R) Series
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Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 6 A, 12 A, 16 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-4 (DO-203AA)
TYPICAL APPLICATIONS
• DC power supplies
PRIMARY CHARACTERISTICS
• Inverters
IF(AV)
6 A, 12 A, 16 A
Package
DO-4 (DO-203AA)
Circuit configuration
Single
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
6FL
12FL
16FL
6
12
16
A
100
100
100
°C
9.5
19
25
A
50 Hz
110
145
180
60 Hz
115
150
190
TC
IF(RMS)
IFSM
I2t
50 Hz
60
103
160
55
94
150
1452
1452
2290
I2s
Range
50 to 1000
50 to 1000
50 to 1000
V
See Recovery
Characteristics table
See Recovery
Characteristics table
See Recovery
Characteristics table
ns
-65 to +150
-65 to +150
-65 to +150
°C
trr
TJ
A
60 Hz
I2t
VRRM
UNITS
Range
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-6FL..,
VS-12FL..,
VS-16FL..
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
5
50
75
10
100
150
20
200
275
40
400
500
60
600
725
80
800
950
100
1000
1250
IRRM MAXIMUM
AT TJ = 25 °C
μA
IRRM MAXIMUM
AT TJ = 100 °C
mA
IRRM MAXIMUM
AT TJ = 150 °C
mA
50
-
6.0
Revision: 11-Jan-18
Document Number: 93138
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC
IF(RMS)
Maximum RMS current
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum
I2t
I2t
for fusing
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Maximum forward voltage drop
VFM
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial
TJ = 150 °C
100 % VRRM
reapplied
6FL..
12FL..
16FL..
UNITS
6
12 (1)
16
A
100
100
100
°C
9.5
19
25
215
130
170
135
180
225
110
145
180
115
150 (1)
190
86
145
230
78
130
210
60
103
160
55
94
150
856
1452
2290
TJ = 25 °C; IF = Rated IF(AV) (DC)
1.4
1.4
(1)
1.4
TC = 100 °C; IFM = x rated IF(AV)
1.5
1.5 (1)
1.5
t = 0.1 ms to 10 ms, no voltage reapplied
A
A2s
A2s
V
Note
(1) JEDEC® registered values
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS
Maximum
reverse
recovery time
Maximum
peak recovery
current
Maximum
reverse
recovery
charge
trr
IRM(REC)
6FL..,
12FL..,
16FL..
S02
S05
S10
S02
S05
S10
S02
S05
S10
TJ = 25 °C,
IF = 1 A to VR = 30 V, 110
dIF/dt = 100 A/μs
285
490
100
250
430
90
225
390
TJ = 25 °C,
dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
200
500
1000
200
500
IFM = x rated IF(AV)
-
-
-
-
-
UNITS
ns
1000 200
-
-
500
1000
-
-
IFM
trr
t
dir
dt
-
Qrr
IRM(REC)
Qrr
TJ = 25 °C,
IF = 1 A to VR = 30 V, 230 1700 5000
dIF/dt = 100 A/μs
200 1300 3800 150 1100 3000
TJ = 25 °C,
dIF/dt = 25 A/μs,
IFM = x rated IF(AV)
200 1200 5000 200 1200 5000
200 1200 5000
nC
Note
(1) JEDEC® registered values
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
SYMBOL
TEST CONDITIONS
12FL.. 16FL.. UNITS
TJ
-65 to +150
TStg
-65 to +175
Maximum thermal resistance, junction to case
RthJC
DC operation
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat, and greased
2.5
2.0
1.5 + 0 - 10 %
(13)
Lubricated threads
1.2 + 0 - 10 %
(10)
Approximate weight
JEDEC®
°C
1.6
°C/W
0.5
Not lubricated threads
Allowable mounting torque
Case style
6FL..
N·m
(lbf · in)
7
g
0.25
oz.
DO-4 (DO-203AA)
Revision: 11-Jan-18
Document Number: 93138
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VS-6FL(R), VS-12FL(R), VS-16FL(R) Series
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RthJC CONDUCTION
6FL..
CONDUCTION ANGLE
12FL..
16FL..
SINUSOIDAL CONDUCTION
6FL..
12FL..
16FL..
RECTANGULAR CONDUCTION
180°
0.58
0.46
0.37
0.33
0.26
0.21
120°
0.60
0.48
0.39
0.58
0.46
0.37
60°
1.28
1.02
0.82
1.28
1.02
0.82
30°
2.20
1.76
1.41
2.20
1.76
1.41
TEST CONDITIONS
UNITS
TJ = 150 °C
K/W
160
160
150
150
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
140
DC
130
120
110
100
180 °C
90
180 °C
120 °C
60 °C
80
140
DC
130
180 °C
120
110
100
180 °C
120 °C
60 °C
90
80
70
70
60
60
0
1
2
3
4
5
6
7
8
9
0
10
5
10
15
20
25
30
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature, 6FL Series
Fig. 3 - Average Forward Current vs.
Maximum Allowable Case Temperature, 16FL Series
160
IF
Maximum Allowable
Case Temperature (°C)
150
dIF
dt
140
130
IFM
I
DC
120
trr
t
110
%IRM(REC)
100
180 °C
90
180 °C
120 °C
60 °C
80
IRM(REC)
70
60
0
2
4
6
8
10
12
14
16
18
20
Average Forward Current (A)
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature, 12FL Series
Qrr
IF, IFM - Peak forward current prior to commutation
-dIF/dt - Rate of fall of forward current
IRM(REC) - Peak reverse recovery current
trr - Reverse recovery time
Qrr - Reverse recovered charge
Fig. 4 - Reverse Recovery Time Test Waveform
Revision: 11-Jan-18
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6
ΔR - K/W
Ø = 180°
120°
60°
30°
7
Conduction
angle - Ø
8
ΔR
180°
0.58
30 - Δ
R
120°
0.60
60°
1.28
30°
2.20
thS
-Δ
R
15
A
=1
0-
-Δ
R
20 -
5
8
R
12
6
-Δ 7-Δ -Δ
R
R R
ΔR
R
-Δ
6FL...
TJ = 150 °C
9
5
Maximum Average Forward
Power Loss (W)
10
Vishay Semiconductors
K/
W
RMS limit
4
3
2
No heatsi
nk
Ø
Conduction angle
1
0
0
1
2
3
4
5
6
10
20
Average Forward Current (A)
30
40
50
60
70
80
90 100
Maximum Allowable
Ambient Temperature (°C)
Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 6FL Series
8
12
- ΔR
15 ΔR
20 ΔR
DC
0
180°
0.33
30 - ΔR
120°
0.58
60°
1.28
30°
2.20
thS
A
=8
10
Ø = 180°
120°
60°
30°
DC
6
RMS limit
4
2
Ø
-Δ 4ΔR
R
ΔR - K/W
10
5
Conduction
angle - Ø
12
6-
R
ΔR
-Δ
RK
/W
-Δ
R
R
-Δ
6FL...
TJ = 150 °C
3
Maximum Average Forward
Power Loss (W)
14
No heatsink
Conduction angle
0
0
1
3
2
4
5
6
7
8
9
10
10
20
Average Forward Current (A)
30
40
50
60
70
90 100
80
Maximum Allowable
Ambient Temperature (°C)
6-
Ø = 180°
120°
60°
30°
14
12
10
ΔR
10 -
ΔR
RMS limit
8
2
3
thS
A
ΔR
8-
12 -
R
ΔR
=4
-Δ
R
-Δ
R
K/
W
-Δ
R
4
Ø
Conduction angle
2
180°
0.46
120°
0.48
60°
1.02
30°
1.76
ΔR
15 - Δ
R
20 - ΔR
6
ΔR - K/W
16
5-
R
-Δ
12FL...
TJ = 150 °C
18
1
Maximum Average Forward
Power Loss (W)
20
Conduction
angle - Ø
Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 6FL Series
30 - ΔR
No heatsink
0
0
1
2
3
4
5
6
7
8
9
10 11 12
Average Forward Current (A)
10
20
30
40
50
60
70
80
90 100
Maximum Allowable
Ambient Temperature (°C)
Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 12FL Series
Revision: 11-Jan-18
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thS
A
25
3-
Ø = 180°
120°
60°
30°
20
15
5-
DC
10
5
ΔR
4-
ΔR
8-Δ
R
10 - Δ
R
15 - ΔR
20 - ΔR
RMS limit
=2
1.
0
-Δ
R
0.
-Δ
R
5
K/
W
-Δ
R
ΔR
6-Δ
R
ΔR - K/W
R
12FL...
TJ = 150 °C
Conduction
angle - Ø
Maximum Average Forward
Power Loss (W)
30
Vishay Semiconductors
DC
0
180°
0.26
120°
0.46
60°
1.02
30°
1.76
Ø
Conduction angle
No heatsink
0
0
2
4
6
8
10
12
14
16
18
20
10
20
Average Forward Current (A)
30 40
50
60
70
90 100
80
Maximum Allowable
Ambient Temperature (°C)
4-
=3
ΔR
6ΔR
10 RMS limit
10
A
ΔR
5-
Ø = 180°
120°
60°
30°
15
thS
1.
-Δ
5
-Δ
R
R
-Δ
R
K/
W
8-Δ
R
ΔR
15 - Δ
R
5
20 - ΔR
Ø
Conduction angle
ΔR - K/W
20
2
R
R
-Δ
16FL...
TJ = 150 °C
1
Maximum Average Forward
Power Loss (W)
25
Conduction
angle - Ø
Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 12FL Series
180°
0.37
120°
0.39
60°
0.82
30°
1.41
0
0
2
4
6
8
10
12
14
10
16
20
Average Forward Current (A)
30
40
50
60
70
80
90 100
Maximum Allowable
Ambient Temperature (°C)
1.5
16FL...
TJ = 150 °C
30
R
Ø = 180°
120°
60°
30°
25
20
thS
A
=3
4-
RMS limit
15
2-
5-Δ
R
8-Δ
R
DC
-Δ
R
1.
0
ΔR
0.
5
-Δ
R
-Δ
R
-Δ
RK
5
6-Δ
R
15 - ΔR
Ø
DC
0
180°
0.21
120°
0.37
60°
0.82
30°
1.41
/W
ΔR
10 - Δ
R
10
ΔR - K/W
Maximum Average Forward
Power Loss (W)
35
Conduction
angle - Ø
Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series
Conduction angle
0
0
5
10
15
20
Average Forward Current (A)
25
10
20
30 40
50
60
70
80
90 100
Maximum Allowable
Ambient Temperature (°C)
Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series
Revision: 11-Jan-18
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Instantaneous Forward Current (A)
103
103
Maximum Average Forward
Power Loss (W)
102
10
TJ = 150 °C
TJ = 25 °C
Ø = 180°
120°
60°
30°
102
Ø
Ø = DC
180°
120°
60°
30°
Ø
10
TJ = 150 °C
1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
102
10
103
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 11 - Maximum Forward Voltage vs. Forward Current,
6FL Series
Fig. 14 - Maximum High Level Forward Power Loss vs. Average
Forward Current, 12FL Series
Maximum Average Forward
Power Loss (W)
6FL...
Ø = 180°
120°
60°
30°
102
Ø
Ø = DC
180°
120°
60°
30°
Ø
10
TJ = 150 °C
1
1
102
10
103
Instantaneous Forward Current (A)
103
16FL..
102
TJ = 150 °C
10
TJ = 25 °C
1
103
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 12 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 6FL Series
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
16FL Series
103
103
16FL...
12FL..
Maximum Average Forward
Power Loss (W)
Instantaneous Forward Current (A)
12FL...
6FL...
102
10
TJ = 150 °C
TJ = 25 °C
Ø = 180°
120°
60°
30°
102
Ø = DC
180°
120°
60°
30°
Ø
10
Ø
TJ = 150 °C
1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
2
10
103
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 13 - Maximum Forward Voltage vs. Forward Current,
12FL Series
Fig. 16 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 16FL Series
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105
TJ = 150 °C
600
500
400
300
200
TJ = 25 °C
6FL...
100
12FL...
60
50
40
30
16FL...
IF = 1 A
6FL...S02
12FL...S02
16FL...S02
20
6FL...S05
12FL...S05
16FL...S05
IF = π x rated IF(AV)
Recovered Charge (nC)
Reverse Recovery Time (ns)
Vishay Semiconductors
104
TJ = 150 °C
IF = π x rated IF(AV)
103
16FL...
12FL...
6FL...
102
IF = 1 A
TJ = 25 °C
10
10
1
3
10
30
1
100
3
10
30
100
Rate of Fall of Forward Current (A/µs)
Rate of Fall of Forward Current (A/µs)
Fig.17a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series...S02
Fig. 18b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series...S05
6FL...S02
12FL...S02
16FL...S02
103
TJ = 150 °C
IF = π x rated IF(AV)
102
16FL...
12FL...
6FL...
IF = 1 A
10
TJ = 25 °C
Reverse Recovery Time (ns)
Recovered Charge (nC)
104
1
IF = π x rated IF(AV)
2000
1000
TJ = 25 °C
600
500
400
300
6FL...
12FL... 16FL...
6FL...S10
12FL...S10
16FL...S10
200
IF = 1 A
100
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/µs)
Rate of Fall of Forward Current (A/µs)
Fig. 17b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series...S02
Fig. 19a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series...S10
105
6FL...S05
12FL...S05
16FL...S05
3000
TJ = 150 °C
TJ = 150 °C
2000
Recovered Charge (nC)
Reverse Recovery Time (ns)
TJ = 150 °C
6000
5000
4000
3000
IF = π x rated IF(AV)
1000
600
500
400
300
TJ = 25 °C
6FL...
200
12FL...
16FL...
IF = π x rated IF(AV)
104
103
12FL...
6FL...
1
3
10
30
100
IF = 1 A
TJ = 25 °C
102
6FL...S10
12FL...S10
16FL...S10
IF = 1 A
100
16FL...
10
1
3
10
30
100
Rate of Fall of Forward Current (A/µs)
Rate of Fall of Forward Current (A/µs)
Fig. 18a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series...S05
Fig. 19b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series...S10
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200
140
At any rated load condition and with
rated VRRM applied following surge.
100
80
60
60 Hz
40
50 Hz
At any rated load condition and with
rated VRRM applied following surge.
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
120
150
60 Hz
100
50 Hz
50
20
0
0
1
2
4
6 8 10
20
1
40 60
2
4
6 8 10
20
40 60
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 20 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 6FL Series
Fig. 22 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 16FL Series
Peak Half Sine Wave
Forward Current (A)
150
100
60 Hz
50 Hz
50
0
1
2
4
6 8 10
20
40 60
Transient Thermal Impedance
Junction to Case (°C/W)
10
At any rated load condition and with
rated VRRM applied following surge.
6FL...
16FL...
1
12FL...
10-1
10-3
10-2
10-1
1
10
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Square Wave Pulse Duration (s)
Fig. 21 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 12FL Series
Fig. 23 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration, All Series
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6FL(R), VS-12FL(R), VS-16FL(R) Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
16
F
L
R
60
M
S02
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current code I(AVG) = exact current rating
3
-
F = diode
4
-
Omit = standard recovery diode
L = only for fast diode
5
-
Omit = stud forward polarity
R = stud reverse polarity
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
7
-
Outlines:
Omit = stud base UNF thread
M = stud base metric thread
8
-
trr code only for fast diode (see Recovery Characteristics table)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 11-Jan-18
Document Number: 93138
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS in millimeters (inches)
+ 0.3
0
+ 0.01
(0.08
0)
0.8 ± 0.1
(0.03 ± 0.004)
3.30 (0.13)
4.00 (0.16)
2
5.50 (0.22) MIN.
R 0.40
R (0.02)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40)
MAX.
3.50 (0.14)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 01-Jan-2022
1
Document Number: 91000