VS-16RIA Series
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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 16 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
TO-48 (TO-208AA)
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
PRIMARY CHARACTERISTICS
IT(AV)
16 A
VDRM/VRRM
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
VTM
1.75 V
IGT
60 mA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
TJ
-65 °C to +125 °C
• Phase control applications
Package
TO-48 (TO-208AA)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
I2t
16
A
85
°C
35
A
50 Hz
340
60 Hz
360
50 Hz
574
60 Hz
524
VDRM/VRRM
tq
UNITS
TC
IT(RMS)
ITSM
VALUES
Typical
TJ
A
A2s
100 to 1200
V
110
μs
-65 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-16RIA
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
PEAK VOLTAGE (2)
AT TJ = TJ MAXIMUM
mA
V
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
20
10
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with t 5 ms
p
Revision: 21-Sep-17
Document Number: 93695
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VS-16RIA Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
TEST CONDITIONS
180° sinusoidal conduction
IT(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
No voltage
reapplied
16
A
85
°C
35
A
360
285
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
300
524
405
5740
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
0.97
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.24
Low level value of
on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
17.9
High level value of
on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
13.6
Ipk = 50 A, TJ = 25 °C
1.75
VTM
IH
Latching current
IL
TJ = 25 °C, anode supply 6 V, resistive load
A2s
375
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
VT(TO)1
Maximum on-state voltage
A
574
Low level value of threshold voltage
Maximum holding current
UNITS
340
No voltage
reapplied
100 % VRRM
reapplied
VALUES
A2s
V
m
130
200
V
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VDRM 600 V
Maximum rate of rise
of turned-on current
VDRM 800 V
VDRM 1000 V
VALUES
UNITS
200
dI/dt
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
VDRM 1600 V
180
160
A/μs
150
Typical turn-on time
tgt
TJ = 25 °C,
at rated VDRM/VRRM, TJ = 125 °C
Typical reverse recovery time
trr
TJ = TJ maximum,
ITM = IT(AV), tp > 200 μs, dI/dt = - 10 A/μs
Typical turn-off time
tq
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
0.9
4
μs
110
Note
• tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
VALUES
TJ = TJ maximum linear to 100 % rated VDRM
100
TJ = TJ maximum linear to 67 % rated VDRM
300 (1)
UNITS
V/μs
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 16RIA120S90
Revision: 21-Sep-17
Document Number: 93695
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16RIA Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
TEST CONDITIONS
VALUES
8.0
TJ = TJ maximum
2.0
UNITS
W
Maximum peak positive gate current
IGM
TJ = TJ maximum
1.5
A
Maximum peak negative gate voltage
-VGM
TJ = TJ maximum
10
V
TJ = - 65 °C
90
DC gate current required to trigger
IGT
TJ = 25 °C
TJ = 125 °C
TJ = - 65 °C
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VGT
IGD
VGD
60
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
35
3.0
TJ = 25 °C
2.0
TJ = 125 °C
1.0
TJ = TJ maximum, VDRM = Rated value
TJ = TJ maximum,
VDRM = Rated value
mA
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
V
2.0
mA
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-65 to +125
°C
Maximum operating junction
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.86
Maximum thermal resistance,
case to heat sink
RthCS
Mounting surface, smooth, flat and greased
0.35
K/W
TO NUT
Lubricated threads
(Non-lubricated threads)
Mounting torque
Approximate weight
Case style
See dimensions - link at the end of datasheet
TO DEVICE
20 (27.5)
25
lbf in
0.23 (0.32)
0.29
kgf · m
2.3 (3.1)
2.8
N·m
14
g
0.49
oz.
TO-48 (TO-208AA)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.21
0.15
120°
0.25
0.25
90°
0.31
0.34
60°
0.45
0.47
30°
0.76
0.76
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93695
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16RIA Series
130
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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16RIA Series
RthJC (DC) = 1.15 K/W
120
110
100
Conduction Angle
90
30°
80
60°
90°
120°
70
180°
60
50
0
5
10
15
20
130
16RIA Series
RthJC (DC) = 1.15 K/W
120
110
100
Conduction Period
90
30°
60°
80
90°
120°
70
180°
60
DC
50
0
25
10
Fig. 1 - Current Ratings Characteristics
30
40
Fig. 2 - Current Ratings Characteristics
45
35
15
Conduction Angle
10
16RIA Series
TJ = 125°C
5
R
20
a
elt
-D
3K
/W
4K
/W
5K
/W
7K
/W
RMS Limit
25
K/
W
W
K/
30
2
1
0.
180°
120°
90°
60°
30°
40
=
A
hS
R t
Maximum Average On-state Power Loss (W)
20
Average On-state Current (A)
Average On-state Current (A)
10 K/
W
0
0
5
10
15
20
25
0
Average On-state Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
45
35
Conduction Period
10
16RIA Series
TJ = 125°C
5
R
RMS Limit
20
a
elt
-D
3K
/W
4K
/W
5K
/W
7K
/W
25
15
K/
W
W
K/
30
2
1
0.
DC
180°
120°
90°
60°
30°
40
=
A
hS
R t
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
10 K/W
0
0
4
8
12
16
20
Average On-state Current (A)
24
28
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Sep-17
Document Number: 93695
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VS-16RIA Series
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350
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial TJ= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
280
260
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
300
Vishay Semiconductors
240
220
200
180
16RIA Series
160
140
1
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reapplied
Rated VRRMReapplied
325
300
275
250
225
200
175
16RIA Series
150
125
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
16RIA Series
100
10
TJ = 25°C
TJ = 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 7 - Forward Voltage Drop Characteristics
10
Steady State Value
RthJC = 1.15 K/W
(DC Operation)
1
0.1
16RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 21-Sep-17
Document Number: 93695
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16RIA Series
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Vishay Semiconductors
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr = 6 µs
b) Recommended load line for