VS-175BGQ045HF4

VS-175BGQ045HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode Anode • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long term reliability PowerTab® • Screw mounting only • AEC-Q101 qualified PRODUCT SUMMARY Package PowerTab® IF(AV) 175 A • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VR 45 V VF at IF 0.7 V IRM 640 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 40 mJ DESCRIPTION The VS-175BGQ045HF4 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies.  The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform 175 A TC 84 °C 45 V tp = 5 μs sine 8700 A 175 Apk (typical) 0.63 V VRRM IFSM VF TJ UNITS TJ 150 °C -55 to +150 °C VS-175BGQ045HF4 UNITS 45 V Range VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 175 A Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 6 A, L = 2 mH 40 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 6 A Repetitive avalanche current 50 % duty cycle at TC = 84 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 8700 A 1550 Revision: 16-Jun-15 Document Number: 93805 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-175BGQ045HF4 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 100 A VFM (1) Forward voltage drop TJ = 25 °C 175 A 100 A TJ = 150 °C 175 A TJ = 150 °C, VR = 45 V IRM (1) Reverse leakage current TJ = 25 °C Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured from tab to mounting plane Maximum voltage rate of change dV/dt MAX. 0.55 0.58 0.67 0.75 0.49 0.54 0.63 0.7 1200 2000 VR = Rated VR TJ = 125 °C TYP. 0.6 2 360 640 Rated VR UNITS V mA 5600 pF 3.5 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -55 to +150 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation 0.35 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.20 °C/W Approximate weight Mounting torque g oz. minimum 1.2 (10) N·m maximum 2.4 (20) (lbf · in) Case style PowerTab® Marking device 175BGQ045H 10 000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 5 0.18 100 TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 1000 150 °C 125 °C 100 100 °C 75 °C 10 50 °C 1 25 °C 0.1 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jun-15 Document Number: 93805 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-175BGQ045HF4 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 D = 0.5 D = 0.2 0.1 D = 0.1 Single Pulse (Thermal Resistance) D = 0.05 D = 0.02 D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 200 140 Average Power Loss (W) Allowable Case Temperature (°C) 160 120 100 DC 80 Square wave (d = 0.5) rated Vr applied 60 180° 120° 90° 60° 30° 150 RMS Limit DC 100 50 0 40 0 50 100 150 200 250 300 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 50 100 150 200 250 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 16-Jun-15 Document Number: 93805 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-175BGQ045HF4 IFSM - Non Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 10 000 L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 At Any Rated Load Condition And With Rated VRRM Applied Following Surge Fig. 8 - Unclamped Inductive Test Circuit 1000 10 100 1000 10 000 tp - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code VS- 175 BGQ 045 1 2 3 4 H F4 5 6 1 - Vishay Semiconductors product 2 - Current rating (175 = 175 A) 3 - Essential part number 4 - Voltage rating (045 = 45 V) 5 - H = AEC-Q101 qualified 6 - Environmental digit: - F4 = RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-175BGQ045HF4 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95467 Application note www.vishay.com/doc?95179 Revision: 16-Jun-15 Document Number: 93805 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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