VS-180NQ045PBF

VS-180NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level Base cathode HALF-PAK (D-67) • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION IF(AV) 180 A VR 45 V Package HALF-PAK (D-67) Circuit configuration Single diode The VS-180NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 180 Apk, TJ = 125 °C TJ Range VALUES UNITS 180 A 45 V 27 000 A 0.63 V -55 to +150 °C VS-180NQ045PbF UNITS 45 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 180 A Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 22 A, L = 1 mH 243 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 36 A Repetitive avalanche current 50 % duty cycle at TC = 105 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 27 000 A 2400 Revision: 01-Feb-2019 Document Number: 94148 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180NQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 180 A Maximum forward voltage drop See fig. 1 VFM (1) 180 A IRM Maximum junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt 0.83 0.89 15 VR = Rated VR TJ = 125 °C V 0.63 TJ = 125 °C TJ = 25 °C UNITS 0.60 TJ = 25 °C 360 A 360 A Maximum reverse leakage current See fig. 2 VALUES mA 600 VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 7700 From top of terminal hole to mounting plane pF 6.0 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Rated VR Note (1) Pulse width = 500 μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation See fig. 4 0.28 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.05 °C/W Approximate weight minimum Mounting torque 1.06 oz. 4 (35.4) Non-lubricated threads minimum N m (lbf in) 3.4 (30) maximum 5 (44.2) Case style HALF-PAK module 10 000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) g 3 (26.5) maximum Terminal torque 30 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 TJ = 25 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94148 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180NQ045PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 160 200 150 180 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 DC 130 120 Square wave (D = 0.50) 80 % rated VR applied 110 100 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 160 140 120 100 80 60 RMS limit 40 20 See note (1) DC 0 80 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 01-Feb-2019 Document Number: 94148 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180NQ045PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 100 10 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR ORDERING INFORMATION TABLE Device code VS- 18 0 N Q 1 2 3 4 5 045 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (045 = 45 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 01-Feb-2019 Document Number: 94148 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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