VS-180RKI...PbF, VS-181RKI...PbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 180 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-93 (TO-209AB)
TYPICAL APPLICATIONS
• DC motor controls
PRIMARY CHARACTERISTICS
• Controlled DC power supplies
IT(AV)
180 A
VDRM/VRRM
400 V, 800 V, 1000 V
VTM
1.35 V
IGT
65 mA
TJ
-40 °C to +125 °C
Package
TO-93 (TO-209AB)
Circuit configuration
Single SCR
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
180
A
80
°C
285
ITSM
I2t
50 Hz
3800
60 Hz
4000
50 Hz
72
60 Hz
66
VDRM/VRRM
tq
Typical
TJ
A
kA2s
400 to 1000
V
100
μs
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
PART NUMBER
VS-180RKI
VS-181RKI
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
40
400
500
80
800
900
100
1000
1100
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
Revision: 26-Sep-17
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
Maximum RMS on-state current
IRMS
DC at 79 °C case temperature
285
t = 10 ms
No voltage
reapplied
3800
100 % VRRM
reapplied
3500
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
No voltage
reapplied
A
80
°C
4000
Sinusoidal half wave,
intial TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
72
66
61
720
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.83
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.89
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.92
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.81
Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.35
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
56
Low level value of threshold voltage
Maximum holding current
A
3660
High level value of threshold voltage
Maximum on-state voltage
UNITS
180
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
VALUES
UNITS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
TEST CONDITIONS
300
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/μs,
VR = 100 V, dV/dt = 20 V/μs
100
μs
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of
rise of off-state voltage
dV/dt
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
TJ = TJ maximum rated VDRM/VRRM applied
30
mA
Revision: 26-Sep-17
Document Number: 94382
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
DC gate current required to trigger
IGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
MAX.
10
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
A
20
V
5.0
TJ = - 40 °C
130
-
TJ = 25 °C
65
150
35
-
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 25 °C
TJ = 125 °C
2.0
-
1.2
2.5
0.9
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
UNITS
W
3.0
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
VGT
TYP.
TJ = TJ maximum, tp 5 ms
TJ = 125 °C
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
-40 to 125
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.15
Maximum thermal resistance,
junction to ambient
RthCS
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
31
(275)
Lubricated threads
24.5
(210)
°C
K/W
Mounting force, ± 10 %
Approximate weight
280
Case style
See dimensions - link at the end of datasheet
N·m
(lbf · in)
g
TO-93 (TO-209AB)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.050
0.032
120°
0.063
0.059
90°
0.080
0.082
60°
0.118
0.124
30°
0.225
0.228
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 26-Sep-17
Document Number: 94382
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130
130
RthJC (DC) = 0.15 K/W
120
110
Ø
Conduction angle
100
90
80
30°
60°
120°
90°
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
RthJC (DC) = 0.15 K/W
120
110
Ø
Conduction period
100
30°
90
80
60°
120°
180°
0
20
40
60
Average On-State Current (A)
94382_01
0
80 100 120 140 160 180 200
180°
90°
70
70
50
100
150
200
250
300
Average On-State Current (A)
94382_02
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
240
Ø
40
Conduction angle
20
TJ = 125 °C
K/
R
-Δ
60
0.6
W
80
K/
100
.1
120
K/
W
140
=0
RMS limit
A
140
3
180
160
R thS
160
0.
200
W
180
220
K/
180°
120°
90°
60°
30°
2
200
Maximum Average On-State
Power Loss (W)
240
220
0.
Maximum Average On-State
Power Loss (W)
DC
W
0.8
120
K/W
/W
1K
100
80
60
1.5
40
2 K/W
K/W
20
0
0
0
20
40
60
80
100 120 140 160 180
Average On-State Current (A)
94382_03a
0
25
50
75
100
125
Maximum Allowable
Ambient Temperature (°C)
94382_03b
Fig. 3 - On-State Power Loss Characteristics
Ø
Conduction period
50
TJ = 125 °C
W
200
0.6
150
K/W
1 K/W 0.8 K/
100
W
1.5 K/W
50
0
2 K/W
0
0
94382_04a
K/
R
-Δ
100
0.3
W
150
K/
W
250
K/
RMS limit
2
1
0.
200
0.
=
250
300
SA
DC
180°
120°
90°
60°
30°
300
Maximum Average On-State
Power Loss (W)
350
R th
Maximum Average On-State
Power Loss (W)
350
50
100
150
200
250
Average On-State Current (A)
300
0
94382_04b
25
50
75
100
125
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94382
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Vishay Semiconductors
4000
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3500
Peak Half Sine Wave
On-State Current (A)
Peak Half Sine Wave
On-State Current (A)
4000
3000
2500
2000
1500
1
10
3000
2500
2000
0.1
1
Pulse Train Duration (s)
94382_06
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
3500
1500
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
94382_05
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
TJ = 25 °C
1000
TJ = 125 °C
100
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On-State Voltage (V)
94382_07
Fig. 7 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (K/W)
1
Steady state value
RthJC = 0.15 K/W
(DC operation)
0.1
0.01
0.001
0.001
94382_08
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal impedance ZthJC Characteristics
Revision: 26-Sep-17
Document Number: 94382
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10
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
tr ≤ 0.5 μs, tp ≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
tr ≤ 1 μs, tp ≥ 6 μs
VGD
0.1
0.001
(a)
TJ = 40 °C
TJ = 125 °C
1
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
(4) PGM = 200 W, tp = 300 μs
(b)
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3)
(4)
Frequency limited by PG(AV)
IGD
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
94382_09
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
18
1
RKI
100
PbF
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
IT(AV) rated average output current (rounded/10)
3
-
0 = eyelet terminals (gate and auxiliary cathode leads)
4
-
1 = fast-on terminals (gate and auxiliary cathode leads)
Thyristor
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
None = standard production
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95077
Revision: 26-Sep-17
Document Number: 94382
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Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Glass metal seal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red silicon rubber
C.S. 0.51 mm2
(0.0008 s.i.)
Red cathode
213.5 ± 10
(8.41 ± 0.39)
White gate
238.5 ± 10
(9.39 ± 0.39)
Red shrink
75 (2.95)
MIN.
White shrink
Ø 28.5 (1.12)
MAX.
28.5 (1.12)
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
SW 32
3/4"-16UNF-2A
35 (1.38)
MAX.
0° to 15°
4 MAX.
38 MAX.
Fast-on terminals
AMP. 280000-1
REF-250
23 MIN.
Flexible lead
C.S. 35 mm2
(0.054 s.i.)
Document Number: 95077
Revision: 19-May-10
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