VS-181RKI80

VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-93 (TO-209AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-93 (TO-209AB) TYPICAL APPLICATIONS • DC motor controls PRIMARY CHARACTERISTICS • Controlled DC power supplies IT(AV) 180 A VDRM/VRRM 400 V, 800 V, 1000 V VTM 1.35 V IGT 65 mA TJ -40 °C to +125 °C Package TO-93 (TO-209AB) Circuit configuration Single SCR • AC controllers    MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 180 A 80 °C 285 ITSM I2t 50 Hz 3800 60 Hz 4000 50 Hz 72 60 Hz 66 VDRM/VRRM tq Typical TJ A kA2s 400 to 1000 V 100 μs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS PART NUMBER VS-180RKI VS-181RKI VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 100 1000 1100 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 30 Revision: 26-Sep-17 Document Number: 94382 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average on-state current  at case temperature IT(AV) 180° conduction, half sine wave Maximum RMS on-state current IRMS DC at 79 °C case temperature 285 t = 10 ms No voltage reapplied 3800 100 % VRRM reapplied 3500 Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied A 80 °C 4000 Sinusoidal half wave, intial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 72 66 61 720 VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.83 VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.89 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.92 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.81 Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 56 Low level value of threshold voltage Maximum holding current A 3660 High level value of threshold voltage Maximum on-state voltage UNITS 180 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of  rise of turned-on current SYMBOL dI/dt VALUES UNITS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM TEST CONDITIONS 300 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/μs, VR = 100 V, dV/dt = 20 V/μs 100 μs BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage dV/dt Maximum peak reverse and  off-state leakage current IRRM, IDRM TEST CONDITIONS VALUES UNITS TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs TJ = TJ maximum rated VDRM/VRRM applied 30 mA Revision: 26-Sep-17 Document Number: 94382 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD MAX. 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 A 20 V 5.0 TJ = - 40 °C 130 - TJ = 25 °C 65 150 35 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units  12 V anode to cathode applied TJ = 25 °C TJ = 125 °C 2.0 - 1.2 2.5 0.9 TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 3.0 TJ = TJ maximum, tp  5 ms TJ = - 40 °C VGT TYP. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance,  junction to case RthJC DC operation 0.15 Maximum thermal resistance,  junction to ambient RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) °C K/W Mounting force, ± 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheet N·m (lbf · in) g TO-93 (TO-209AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.050 0.032 120° 0.063 0.059 90° 0.080 0.082 60° 0.118 0.124 30° 0.225 0.228 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 26-Sep-17 Document Number: 94382 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors 130 130 RthJC (DC) = 0.15 K/W 120 110 Ø Conduction angle 100 90 80 30° 60° 120° 90° Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) RthJC (DC) = 0.15 K/W 120 110 Ø Conduction period 100 30° 90 80 60° 120° 180° 0 20 40 60 Average On-State Current (A) 94382_01 0 80 100 120 140 160 180 200 180° 90° 70 70 50 100 150 200 250 300 Average On-State Current (A) 94382_02 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 240 Ø 40 Conduction angle 20 TJ = 125 °C K/ R -Δ 60 0.6 W 80 K/ 100 .1 120 K/ W 140 =0 RMS limit A 140 3 180 160 R thS 160 0. 200 W 180 220 K/ 180° 120° 90° 60° 30° 2 200 Maximum Average On-State Power Loss (W) 240 220 0. Maximum Average On-State Power Loss (W) DC W 0.8 120 K/W /W 1K 100 80 60 1.5 40 2 K/W K/W 20 0 0 0 20 40 60 80 100 120 140 160 180 Average On-State Current (A) 94382_03a 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 94382_03b Fig. 3 - On-State Power Loss Characteristics Ø Conduction period 50 TJ = 125 °C W 200 0.6 150 K/W 1 K/W 0.8 K/ 100 W 1.5 K/W 50 0 2 K/W 0 0 94382_04a K/ R -Δ 100 0.3 W 150 K/ W 250 K/ RMS limit 2 1 0. 200 0. = 250 300 SA DC 180° 120° 90° 60° 30° 300 Maximum Average On-State Power Loss (W) 350 R th Maximum Average On-State Power Loss (W) 350 50 100 150 200 250 Average On-State Current (A) 300 0 94382_04b 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 26-Sep-17 Document Number: 94382 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors 4000 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 3500 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) 4000 3000 2500 2000 1500 1 10 3000 2500 2000 0.1 1 Pulse Train Duration (s) 94382_06 Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) 3500 1500 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 94382_05 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied Fig. 6 - Maximum Non-Repetitive Surge Current 10 000 TJ = 25 °C 1000 TJ = 125 °C 100 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On-State Voltage (V) 94382_07 Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value RthJC = 0.15 K/W (DC operation) 0.1 0.01 0.001 0.001 94382_08 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal impedance ZthJC Characteristics Revision: 26-Sep-17 Document Number: 94382 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors 10 Rectangular gate pulse (a) Recommended load line for rated dI/dt: 20 V, 30 Ω, tr ≤ 0.5 μs, tp ≥ 6 μs (b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω, tr ≤ 1 μs, tp ≥ 6 μs VGD 0.1 0.001 (a) TJ = 40 °C TJ = 125 °C 1 (1) PGM = 12 W, tp = 5 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms (4) PGM = 200 W, tp = 300 μs (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) Frequency limited by PG(AV) IGD 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) 94382_09 Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 18 1 RKI 100 PbF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - IT(AV) rated average output current (rounded/10) 3 - 0 = eyelet terminals (gate and auxiliary cathode leads) 4 - 1 = fast-on terminals (gate and auxiliary cathode leads) Thyristor 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - None = standard production PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95077 Revision: 26-Sep-17 Document Number: 94382 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) Glass metal seal 19 (0.75) MAX. Ø 8.5 (0.33) Ø 4.3 (0.17) Red silicon rubber C.S. 0.51 mm2 (0.0008 s.i.) Red cathode 213.5 ± 10 (8.41 ± 0.39) White gate 238.5 ± 10 (9.39 ± 0.39) Red shrink 75 (2.95) MIN. White shrink Ø 28.5 (1.12) MAX. 28.5 (1.12) MAX. 16 (0.63) MAX. 21 (0.83) MAX. SW 32 3/4"-16UNF-2A 35 (1.38) MAX. 0° to 15° 4 MAX. 38 MAX. Fast-on terminals AMP. 280000-1 REF-250 23 MIN. Flexible lead C.S. 35 mm2 (0.054 s.i.) Document Number: 95077 Revision: 19-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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