VS-18TQ040-M3

VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 18 A FEATURES Base cathode 2 • 175 °C TJ operation • Low forward voltage drop • High frequency operation 1 Cathode TO-220AC 2L • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) 18 A VR 35 V, 40 V, 45 V VF at IF 0.53 V IRM max. 25 mA at 125 °C TJ max. 175 °C EAS 24 mJ Package TO-220AC 2L Circuit configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-18TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 18 Apk, TJ = 125 °C TJ Range VALUES UNITS 18 A 35 to 45 V 1800 A 0.53 V -55 to +175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-18TQ035-M3 VS-18TQ040-M3 VS-18TQ045-M3 UNITS 35 40 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current, see fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current, see fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6 A Repetitive avalanche current 50 % duty cycle at TC = 149 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 18 1800 A 390 Revision: 28-Feb-2023 Document Number: 96262 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 18 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 36 A 18 A TJ = 125 °C 36 A Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR TJ = 125 °C Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.60 0.72 V 0.53 0.67 2.5 mA 25 1400 pF 8 nH 10 000 V/μs VALUES UNITS -55 to +175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 1.50 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf  in) Approximate weight Mounting torque °C/W 18TQ035 Marking device Case style TO-220AC 2L 18TQ040 18TQ045 Revision: 28-Feb-2023 Document Number: 96262 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 Vishay Semiconductors 1000 1000 TJ = 175 °C 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 1 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 28-Feb-2023 Document Number: 96262 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 www.vishay.com Vishay Semiconductors 15 18TQ RthJC (DC) = 1.50 °C/W 175 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 165 DC 160 155 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 10 RMS Limit DC 5 0 150 0 4 8 12 16 20 24 0 28 4 8 12 16 20 24 28 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Revision: 28-Feb-2023 Document Number: 96262 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-18TQ035-M3, VS-18TQ040-M3, VS-18TQ045-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 18 T Q 045 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (18 = 18 A) 3 - Package: T = TO-220 4 - Schottky “Q” series 5 - Voltage ratings 6 - Environmental digit 035 = 35 V 040 = 40 V 045 = 45 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-18TQ035-M3 50 Antistatic plastic tubes VS-18TQ040-M3 50 Antistatic plastic tubes VS-18TQ045-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96209 Revision: 28-Feb-2023 Document Number: 96262 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC 2L DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 07-Mar-2022 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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