VS-1EFH01HM3/I

VS-1EFH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 1 A FRED Pt® eSMP® FEATURES Series • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum temperature operating junction • Specified for output and snubber operation • Low forward voltage drop Top view Bottom view • Low leakage current SMF (DO-219AB) Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode • Wave and reflow solderable • Compatible to SOD-123W package case outline LINKS TO ADDITIONAL RESOURCES • AEC-Q101 qualified, meets JESD 201 class 2 whisker test 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1A VR 100 V VF at IF (typ. 125 °C) 0.74 V State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. trr 25 ns TJ max. 175 °C Package SMF (DO-219AB) Circuit configuration Single These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage SYMBOL TEST CONDITIONS VRRM Average rectified forward current IF(AV) TC = 160 °C Non-repetitive peak surge current IFSM TJ = 25 °C Operating junction and storage temperature range TJ, TStg (1) VALUES UNITS 100 V 1 35 -65 to +175 A °C Note (1) Device on PCB with 8 mm x 16 mm soldering lands Revision: 03-Feb-2021 Document Number: 95784 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1EFH01HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Breakdown voltage, blocking voltage VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 1 A - 0.87 0.93 IF = 1 A, TJ = 125 °C - 0.74 0.8 IR = 100 μA UNITS V VR = VR rated - - 2 TJ = 125 °C, VR = VR rated - 0.5 8 VR = 100 V - 5 - pF UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TEST CONDITIONS - 24 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 16 - - 23 - - 1.6 - - 2.5 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr IF = 1 A dIF/dt = 200 A/μs VR = 160 V TJ = 25 °C TJ = 125 °C ns A TJ = 25 °C - 13 - TJ = 125 °C - 30 - MIN. TYP. MAX. UNITS -65 - +175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to mount RthJM Device mounted on PCB with 8 mm x 16 mm soldering lands - - 17 °C/W Thermal resistance, junction to ambient RthJA Device mounted on PCB with 2 mm x 3.5 mm soldering lands - - 140 °C/W Approximate weight Case style SMF (DO-219AB) 10 TJ = 175 °C TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C MAH 175 °C 10 150 °C 1 125 °C 0.1 0.01 25 °C TJ = -40 °C 0.1 g oz. 100 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.015 0.0005 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 50 60 70 80 90 100 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 03-Feb-2021 Document Number: 95784 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1EFH01HM3 www.vishay.com Vishay Semiconductors 1.25 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 1 0.75 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 0.5 0.25 0 1 0 20 40 60 80 0 100 VR - Reverse Voltage (V) 0.5 0.75 1 1.25 1.5 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 180 35 175 30 170 25 DC trr (ns) Allowable Case Temperature (°C) 0.25 165 160 125 °C 20 25 °C 15 Square wave (D = 0.50) 80 % rated VR applied 155 10 See note (1) 150 5 0 0.2 0.4 0.6 0.8 1 1.2 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 40 35 125 °C Qrr (nC) 30 25 20 25 °C 15 10 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 03-Feb-2021 Document Number: 95784 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1EFH01HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 1 E F H 01 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (1 = 1 A) 3 - Circuit configuration: E = single diode 4 - F = SMF package 5 - Process type, 6 - Voltage code (01 = 100 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-1EFH01HM3/I 10 000 10 000 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95572 Part marking information www.vishay.com/doc?95618 Packaging information www.vishay.com/doc?95577 SPICE model www.vishay.com/doc?96012 Revision: 03-Feb-2021 Document Number: 95784 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMF (DO-219AB) DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.10 (0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Revision: 16-Apr-18 Document Number: 95572 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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