VS-1EFH02HM3
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Vishay Semiconductors
Hyperfast Rectifier, 1 A FRED Pt®
eSMP®
FEATURES
Series
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
Top view
• Low leakage current
Bottom view
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMF (DO-219AB)
Cathode
• Wave and reflow solderable
Anode
• Compatible to SOD-123W package case outline
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
DESCRIPTION / APPLICATIONS
3D Models
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery.
PRIMARY CHARACTERISTICS
IF(AV)
1A
VR
200 V
VF at IF (typ. 125 °C)
0.74 V
trr
25 ns
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
TJ max.
175 °C
Package
SMF (DO-219AB)
Circuit configuration
Single
These devices are intended for use in snubber boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case: SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
200
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 160 °C (1)
1
Non-repetitive peak surge current
IFSM
TJ = 25 °C
35
Operating junction and storage temperature range
TJ, TStg
-65 to +175
A
°C
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
Revision: 03-Feb-2021
Document Number: 95786
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Breakdown voltage, blocking voltage
VBR, VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 1 A
-
0.87
0.93
IF = 1 A, TJ = 125 °C
-
0.74
0.8
VR = VR rated
-
-
2
TJ = 125 °C, VR = VR rated
-
0.5
8
VR = 200 V
-
5
-
pF
MIN.
TYP.
MAX.
UNITS
-
24
-
IR = 100 μA
UNITS
V
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
trr
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
25
TJ = 25 °C
-
16
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
ns
-
23
-
-
1.6
-
-
2.5
-
TJ = 25 °C
-
13
-
TJ = 125 °C
-
30
-
MIN.
TYP.
MAX.
UNITS
-65
-
+175
°C
IF = 1 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
TJ = 125 °C
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to mount
RthJM
Device mounted on PCB with 8 mm x 16 mm
soldering lands
-
-
17
°C/W
Thermal resistance, junction to ambient
RthJA
Device mounted on PCB with 2 mm x 3.5 mm
soldering lands
-
-
140
°C/W
Approximate weight
100
10
MDH
100
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
175 °C
10
150 °C
1
125 °C
0.1
0.01
25 °C
TJ = -40 °C
0.1
g
oz.
Case style SMF (DO-219AB)
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
0.015
0.0005
0.001
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 03-Feb-2021
Document Number: 95786
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1EFH02HM3
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Vishay Semiconductors
1.25
RMS limit
Average Power Loss (W)
CT - Junction Capacitance (pF)
100
10
1
0.75
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0.5
0.25
0
1
0
50
100
150
0
200
VR - Reverse Voltage (V)
0.5
0.75
1
1.25
1.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
180
35
175
30
170
25
DC
trr (ns)
Allowable Case Temperature (°C)
0.25
165
160
125 °C
20
25 °C
15
Square wave (D = 0.50)
80 % rated VR applied
155
10
See note (1)
150
5
0
0.2
0.4
0.6
0.8
1
1.2
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
40
35
125 °C
Qrr (nC)
30
25
20
25 °C
15
10
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 03-Feb-2021
Document Number: 95786
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1EFH02HM3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
E
F
H
02
H
M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (1 = 1 A)
3
-
Circuit configuration:
E = single diode
4
-
5
-
F = SMF package
Process type,
H = hyperfast recovery
6
-
Voltage code (02 = 200 V)
7
-
H = AEC-Q101 qualified
8
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-1EFH02HM3/I
10 000
10 000
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95572
Part marking information
www.vishay.com/doc?95618
Packaging information
www.vishay.com/doc?95577
SPICE model
www.vishay.com/doc?96012
Revision: 03-Feb-2021
Document Number: 95786
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SMF (DO-219AB)
DIMENSIONS in millimeters (inches)
0.85 (0.033)
0 (0.000)
0.1 (0.004)
5
5
0.10 (0.003)
1.7 (0.067)
Detail Z
enlarged
1.2 (0.047)
0.8 (0.031)
0.25 (0.010)
1.9 (0.075)
0.35 (0.014)
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051)
1.4 (0.055)
1.3 (0.051)
2.9 (0.114)
17247
Revision: 16-Apr-18
Document Number: 95572
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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