VS-1EMH01-M3
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Vishay Semiconductors
Hyperfast Rectifier, 1 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
Cathode
Anode
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMA (DO-214AC)
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
DESCRIPTION / APPLICATIONS
3D 3D
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
3D Models
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
PRIMARY CHARACTERISTICS
IF(AV)
1A
VR
100 V
VF at IF
0.68 V
trr
25 ns
TJ max.
175 °C
Package
SMA (DO-214AC)
Circuit configuration
Single die
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
100
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TSp = 158 °C
1
Non-repetitive peak surge current
IFSM
TJ = 25 °C, 6 ms square pulse
50
Operating junction and storage temperatures
TJ, TStg
-55 to +175
A
°C
Revision: 16-Jul-2020
Document Number: 95826
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Breakdown voltage, blocking voltage
VBR, VR
Forward voltage, per diode
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
100
-
-
IF = 1 A
-
0.82
0.90
IF = 1 A, TJ = 125 °C
-
0.68
0.76
IR = 100 μA
UNITS
V
VR = VR rated
-
-
2
TJ = 125 °C, VR = VR rated
-
0.6
8
VR = 100 V
-
8.5
-
pF
MAX.
UNITS
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
24
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
25
TJ = 25 °C
-
15.2
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
ns
-
21
-
-
1.38
-
-
2
-
TJ = 25 °C
-
10.6
-
TJ = 125 °C
-
21
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
-
11
21
°C/W
-
-
125
°C/W
IF = 1 A,
dIF/dt = 200 A/μs,
VR = 160 V
TJ = 25 °C
TJ = 125 °C
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to lead
RthJL
Device mounted on PCB with
2 x 3.5 mm soldering lands
Thermal resistance, junction to ambient
RthJA
Device mounted on PCB with
recommended pad size
Approximate weight
g
oz.
Case style SMA (DO-214AC)
1H1
100
100
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
0.07
0.002
TJ = 175 °C
10
1
TJ = 150 °C
TJ = 125 °C
10
175 °C
150 °C
1
125 °C
0.1
0.01
25 °C
0.001
TJ = 25 °C
0.0001
0.1
0.4
0.8
1.2
1.6
2.0
2.4
0
25
50
75
100
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 16-Jul-2020
Document Number: 95826
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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3
RMS limit
Average Power Loss (W)
CT - Junction Capacitance (pF)
100
10
2.5
2
1
0.5
0
1
0
25
50
75
0
100
0.5
1
1.5
2
2.5
3
3.5
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
30
180
175
25
170
20
DC
trr (ns)
Allowable Case Temperature (°C)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1.5
165
160
125 °C
15
Square wave (D = 0.50)
Rated VR applied
25 °C
10
155
See note (1)
5
150
0
0.2
0.4
0.6
0.8
1
100
1.2
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
30
Qrr (nC)
25
125 °C
20
15
25 °C
10
5
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 16-Jul-2020
Document Number: 95826
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1EMH01-M3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
E
M
H
01
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (1 = 1 A)
3
-
Circuit configuration:
E = single diode
4
-
M = SMA package
5
-
Process type,
H = hyperfast recovery
6
-
Voltage code (01 = 100 V)
7
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-1EMH01-M3/5AT
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
7500
7500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95400
Part marking information
www.vishay.com/doc?95472
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96376
Revision: 16-Jul-2020
Document Number: 95826
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000