VS-1KAB-E Series
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Vishay Semiconductors
Single Phase Rectifier Bridge, 1.2 A
FEATURES
• Ease of assembly, installation, inventory
• High surge rating
• Compact
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
D-38
A 1.2 A diode bridge rectifier assembly designed for new
circuits and for replacement service. For printed circuit
board applications.
PRIMARY CHARACTERISTICS
IO
1.2 A
VRRM
100 V to 1000 V
Package
D-38
Circuit configuration
Single phase bridge
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IO
IFSM
I2t
VALUES
UNITS
1.2
A
50 Hz
50
60 Hz
52
50 Hz
17.7
60 Hz
16.1
VRRM
TJ
A
A2s
100 to 1000
V
-55 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
CROSS REFERENCE
PART
NUMBER
DIN CODE
VS-1KAB05E
VRRM, VRSM
(V)
VRMS
(RECOMMENDED)
(V)
MAXIMUM
LOAD CAPACITANCE
(μF) (1)
MINIMUM
SOURCE RESISTANCE
() (1)
50
20
7000
0.5
VS-1KAB10E
B40C1000
100
40
5000
0.5
VS-1KAB20E
B80C1000
200
80
3300
0.8
VS-1KAB40E
B125C1000
400
125
1600
1.5
VS-1KAB60E
B250C1000
600
250
1200
2.6
VS-1KAB80E
B380C1000
800
380
800
3.0
VS-1KAB100E
B500C1000
1000
500
600
5.0
Note
(1) See figure 3
Revision: 14-Sep-17
Document Number: 93559
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1KAB-E Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current
IO
Maximum peak one cycle,
non-repetitive surge current
TEST CONDITIONS
1.2
TA = 45 °C, capacitive load
1.0
50 Hz half cycle sine wave
or 6 ms rectangular pulse
IFSM
60 Hz half cycle sine wave
or 5 ms rectangular pulse
t = 10 ms
Maximum I2t capability for fusing
t = 8.3 ms
I2t
VALUES
TA = 45 °C, resistive or inductive load
t = 10 ms
t = 8.3 ms
Following any rated load
condition, and with rated
VRRM applied following surge
UNITS
A
50
A
52
Rated VRRM applied
following surge, initial
TJ = 150 °C
12.5
VRRM = 0 following surge,
initial TJ = 150 °C
17.7
11.3
A2s
16.1
Maximum I2t capability for fusing
I2t (1)
t = 0.1 to 10 ms, VRRM following surge = 0
177
A2s
Maximum peak forward voltage per leg
VFM
IO = 1.2 A (1.88 Apk)
1.1
V
TJ = 25 °C, at rated VRRM
10
TJ = 150 °C, at rated VRRM
500
Typical peak reverse current per leg
IRM
Operating frequency range
f
μA
40 to 2000
Hz
Note
(1) I2t for time t = I2t x t
x
x
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
SYMBOL
VALUES
UNITS
TJ, TStg
-40 to 150
°C
3
g
0.1
oz.
Approximate weight
Maximum Peak Output Current (A)
Average Output Current (A)
1.4
1.2
Resistive, inductive load
1.0
0.8
0.6
Capacitive load
0.4
0.2
0
0
20
40
60
80
100
120
140
160
60
Following any rated load
condition and with rated
VRRM applied following surge
50
40
30
20
10
0
10-2
10-1
1
10
Maximum Allowable Ambient Temperature (°C)
Equal Amplitude Pulse Train Duration (s)
Fig. 1 - Average (DC) Output Current vs.
Maximum Allowable Ambient Temperature
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Pulse Train Duration (f = 50 Hz)
Revision: 14-Sep-17
Document Number: 93559
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1KAB-E Series
www.vishay.com
10
CL = 200 µF
CL = 400 µF
Average Output Current (A)
RMS Supply Voltage (V)
600
Vishay Semiconductors
500
CL = 600 µF
400
CL = 800 µF
300
CL = 1600 µF
CL = 1200 µF
200
CL = 3300 µF
CL = 5000 µF
100
CL = 7000 µF
5
Resistive, inductive load
2
Capacitive load
1
Initial TJ = 45 °C
0.5
0
0
1
2
3
4
5
6
10-1
1
10
102
103
Minimum Required Value of Source Resistance (Ω)
Switch-On Surge Duration (s)
Fig. 3 - Minimum Required Source Resistance vs.
RMS Supply Voltage and Load Capacitance
Fig. 4 - Maximum Switch-On Surge Current vs.
Surge Duration
CIRCUIT CONFIGURATION
AC
(+)
AC
(-)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95327
Revision: 14-Sep-17
Document Number: 93559
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D-38
DIMENSIONS in millimeters (inches)
5.10 (0.201)
4.30 (0.169)
9.70 (0.382)
8.70 (0.343)
~
+
-
~
5.10 (0.201)
4.30 (0.169)
9.70 (0.382)
8.70 (0.343)
10.30 (0.405)
9.30 (0.366)
25.40 (1.000)
24.00 (0.945)
0.90 (0.035)
0.70 (0.028)
5.10 (0.201)
4.30 (0.169)
Document Number: 95327
1
For technical questions, contact: indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 13-Jul-2020
Legal Disclaimer Notice
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Revision: 01-Jan-2023
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Document Number: 91000
