VS-1N3892

VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Stud Version), 6 A, 12 A FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Standard JEDEC® types • Stud cathode and stud anode versions • Fully characterized reverse recovery conditions • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-4 (DO-203AA) TYPICAL APPLICATIONS • DC power supplies • Inverters PRIMARY CHARACTERISTICS IF(AV) 6 A, 12 A • Converters Package DO-4 (DO-203AA) • Choppers Circuit configuration Single • Ultrasonic systems • Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) TEST CONDITIONS 1N3879(R) TO 1N3883(R) 1N3889(R) TO 1N3893(R) UNITS 6 (1) 12 (1) A 100 100 °C 9.5 19 A 50 Hz 72 145 60 Hz 75 (1) 150 (1) TC maximum IF(RMS) IFSM I2t 50 Hz 26 103 60 Hz 23 94 363 856 I2s Range 50 to 400 (1) 50 to 400 (1) V I2t VRRM trr TJ A See Recovery Characteristics table See Recovery Characteristics table Range -65 to +150 -65 to +150 A2s ns °C Note (1) JEDEC® registered values Revision: 11-Jan-18 Document Number: 93144 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VOLTAGE CODE VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 1N3879(R) 50 75 1N3880(R) 100 150 200 250 1N3882(R) 300 350 1N3883(R) 400 450 1N3889(R) 50 75 1N3890(R) 100 150 1N3881(R) 1N3891(R) - - 200 250 1N3892(R) 300 350 1N3893(R) 400 450 IRRM MAXIMUM AT TJ = 25 °C μA IRRM MAXIMUM AT TJ = 100 °C mA IRRM MAXIMUM AT TJ = 150 °C mA 15 (1) 1.0 (1) 3.0 (1) 25 (1) 3.0 (1) 5.0 (1) Note (1) JEDEC® registered values FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature Maximum RMS current IF(AV) 1N3879(R) TO 1N3883(R) TEST CONDITIONS 6 180° conduction, half sine wave DC Maximum peak, one-cycle  non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum forward voltage drop VFM (1) 12 100 IF(RMS) t = 10 ms 1N3889(R) TO 1N3893(R) (1) 19 No voltage reapplied 85 170 90 180 100 % VRRM reapplied 72 145 75 (1) 150 (1) No voltage reapplied Sinusoidal half wave, initial TJ = 150 °C 100 % VRRM reapplied 36 145 33 130 26 103 23 94 363 1452 TJ = 25 °C; IF = Rated IF(AV) (DC) 1.4 (1) 1.4 (1) TC = 100 °C; IFM =  x rated IF(AV) 1.5 (1) 1.5 (1) t = 0.1 ms to 10 ms, no voltage reapplied A 100 9.5 UNITS °C A A2s A2s V Note (1) JEDEC® registered values RECOVERY CHARACTERISTICS PARAMETER SYMBOL Maximum reverse recovery time trr Maximum peak  recovery current IRM(REC) Maximum reverse recovery charge Qrr TEST CONDITIONS 1N3879(R) TO 1N3883(R) 1N3889(R) TO 1N3893(R) TJ = 25 °C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/μs 150 150 300 (1) 300 (1) IFM =  x rated IF(AV) 4 (1) 5 (1) TJ = 25 °C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/μs 400 350 TJ = 25 °C, dIF/dt = 25 A/μs, IFM =  x rated IF(AV) 400 400 TJ = 25 °C, dIF/dt = 25 A/μs, IFM =  x rated IF(AV) UNITS ns - IFM dir dt trr t Qrr IRM(REC) nC Note (1) JEDEC® registered values Revision: 11-Jan-18 Document Number: 93144 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range 1N3879(R) TO 1N3883(R) TEST CONDITIONS 1N3889(R) TO 1N3893(R) TJ -65 to +150 Maximum storage temperature range TStg -65 to +175 Maximum thermal resistance, junction to case RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased °C 2.5 2.0 °C/W 0.5 Not lubricated threads 1.5 + 0 - 10 % (13) Lubricated threads 1.2 + 0 - 10 % (10) Allowable mounting torque Approximate weight JEDEC® Case style UNITS N·m (lbf · in) 7 g 0.25 oz. DO-4 (DO-203AA) RthJC CONDUCTION 1N3879(R) TO 1N3883(R) CONDUCTION ANGLE 1N3889(R) TO 1N3893(R) SINUSOIDAL CONDUCTION 1N3879(R) TO 1N3883(R) 1N3889(R) TO 1N3893(R) TEST CONDITIONS UNITS TJ = 150 °C K/W RECTANGULAR CONDUCTION 180° 0.58 0.46 0.33 0.26 120° 0.60 0.48 0.58 0.46 60° 1.28 1.02 1.28 1.02 30° 2.20 1.76 2.20 1.76 160 160 150 150 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 140 DC 130 120 110 100 180 °C 90 180 °C 120 °C 60 °C 80 70 140 130 DC 120 110 100 180 °C 90 180 °C 120 °C 60 °C 80 70 60 60 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature, 1N3879 Series Fig. 2 - Average Forward Current vs. Maximum Allowable Case Temperature, 1N3889 Series Revision: 11-Jan-18 Document Number: 93144 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors IF dIF dt IFM I trr t %IRM(REC) Qrr IRM(REC) IF, IFM - Peak forward current prior to commutation -dIF/dt - Rate of fall of forward current IRM(REC) - Peak reverse recovery current trr - Reverse recovery time Qrr - Reverse recovered charge 6 ΔR 180° 0.58 30 - Δ R 120° 0.60 60° 1.28 30° 2.20 thS -Δ R 15 A =1 0- -Δ R 20 - 5 8 R 12 Ø = 180° 120° 60° 30° 7 ΔR - K/W 8 6 -Δ 7-Δ -Δ R R R ΔR R -Δ 1N3879 to 1N3883 TJ = 150 °C 9 5 Maximum Average Forward Power Loss (W) 10 Conduction angle - Ø Fig. 3 - Reverse Recovery Time Test Waveform K/ W RMS limit 4 3 2 No heatsi nk Ø Conduction angle 1 0 0 1 2 3 4 5 6 10 Average Forward Current (A) 20 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3879 Series ΔR - K/W 8 DC 0 180° 0.33 30 - ΔR 120° 0.58 60° 1.28 30° 2.20 A =8 10 DC 6 RMS limit 4 2 Ø -Δ 4ΔR R 12 - ΔR 15 ΔR 20 ΔR thS Ø = 180° 120° 60° 30° 5 Conduction angle - Ø 10 6- R ΔR -Δ RK /W -Δ R R -Δ 1N3879 to 1N3883 TJ = 150 °C 12 3 Maximum Average Forward Power Loss (W) 14 No heatsink Conduction angle 0 0 1 2 3 4 5 6 7 8 Average Forward Current (A) 9 10 10 20 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 1N3879 Series Revision: 11-Jan-18 Document Number: 93144 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3879(R), VS-1N3889(R) Series www.vishay.com 6 5 8- ΔR ΔR 12 - RMS limit 4 A ΔR 10 - 2 3 thS =4 -Δ R -Δ R K/ W -Δ R 2 0.46 120° 0.48 60° 1.02 30° 1.76 30 - ΔR Ø Conduction angle 1 180° ΔR 15 - Δ R 20 - ΔR 3 ΔR - K/W Maximum Average Forward Power Loss (W) Ø = 180° 120° 60° 30° 7 R ΔR R -Δ 8 5- 6- 1 1N3889 to 1N3893 TJ = 150 °C 9 Conduction angle - Ø 10 Vishay Semiconductors No heatsink 0 0 2 1 4 3 5 6 7 8 9 10 11 12 10 20 Average Forward Current (A) 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) R 1N3889 to 1N3893 TJ = 150 °C 25 thS A 3- Ø = 180° 120° 60° 30° 20 15 5- DC 5 ΔR 4- 8-Δ R 10 - Δ R 15 - ΔR 20 - ΔR RMS limit 10 ΔR =2 1. 0 -Δ R -Δ R 0. K/ 5 -Δ R W ΔR - K/W Maximum Average Forward Power Loss (W) 30 Conduction angle - Ø Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3889 Series DC 0 180° 0.26 120° 0.46 60° 1.02 30° 1.76 ΔR 6-Δ R Ø Conduction angle No heatsink 0 0 2 4 6 8 10 12 14 16 Average Forward Current (A) 18 20 10 20 30 40 50 60 70 80 90 100 Maximum Allowable Ambient Temperature (°C) 103 103 1N3879 to 1N3883 1N3879 to 1N3883 Maximum Average Forward Power Loss (W) Instantaneous Forward Current (A) Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 1N3889 Series 102 10 TJ = 150 °C TJ = 25 °C 1 Ø = 180° 120° 60° 30° 102 Ø = DC 180° 120° 60° 30° Ø 10 TJ = 150 °C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 8 - Maximum Forward Voltage vs. Forward Current, 1N3879 Series Ø 1 10 102 103 Average Forward Current (A) Fig. 9 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N3879 Series Revision: 11-Jan-18 Document Number: 93144 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors Instantaneous Forward Current (A) 103 140 At any rated load condition and with rated VRRM applied following surge. 1N3889 to 1N3893 Peak Half Sine Wave Forward Current (A) 120 102 10 TJ = 150 °C TJ = 25 °C 100 80 60 50 Hz 20 0 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 4.0 Fig. 10 - Maximum Forward Voltage vs. Forward Current, 1N3889 Series 103 2 1N3889 to 1N3893 Peak Half Sine Wave Forward Current (A) 102 Ø Ø = DC 180° 120° 60° 30° Ø 10 1 10 102 20 40 60 100 60 Hz 50 Hz 50 TJ = 150 °C 1 6 8 10 At any rated load condition and with rated VRRM applied following surge. 150 Ø = 180° 120° 60° 30° 4 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 12 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N3879 Series Instantaneous Forward Voltage (V) Maximum Average Forward Power Loss (W) 60 Hz 40 0 1 103 2 4 6 8 10 20 40 60 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 13 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N3889 Series Average Forward Current (A) Fig. 11 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N3889 Series Transient Thermal Impedance Junction to Case (°C/W) 10 1N3879 to 1N3883 1 10-1 10-3 1N3889 to 1N3893 10-2 10-1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95311 Revision: 11-Jan-18 Document Number: 93144 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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