VS-201CNQ045PbF
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Vishay Semiconductors
High Performance Schottky Rectifier, 200 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
TO-244
Base common cathode
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
200 A
VR
45 V
Package
TO-244
Circuit configuration
Two diodes common cathode
The VS-201CNQ045PbF center tap Schottky rectifier
module has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, converters, freewheeling diodes, welding, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
200
A
45
V
16 000
A
0.58
V
-55 to +175
°C
VS-201CNQ045PbF
UNITS
45
V
TEST CONDITIONS
VALUES
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
100 Apk, TJ = 125 °C (per leg)
TJ
Range
VOLTAGE RATINGS
SYMBOL
PARAMETER
VR
Maximum DC reverse voltage
VRWM
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
per device
UNITS
200
IF(AV)
50 % duty cycle at TC = 146 °C, rectangular waveform
per leg
A
100
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 17 A, L = 1 mH
145
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
20
A
Repetitive avalanche current per leg
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
16 000
A
2000
Revision: 09-May-17
Document Number: 94154
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VS-201CNQ045PbF
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
100 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
100 A
IRM (1)
0.81
0.58
TJ = 125 °C
V
0.71
TJ = 25 °C
10
VR = Rated VR
mA
TJ = 125 °C
90
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance per leg
LS
From top of terminal hole to mounting plane
Maximum voltage rate of change
dV/dt
Maximum junction capacitance per leg
UNITS
0.67
TJ = 25 °C
200 A
200 A
Maximum reverse leakage current per leg
See fig. 2
VALUES
Rated VR
5200
pF
7.0
nH
10 000
V/µs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
per leg
per module
SYMBOL
MIN.
TYP.
TJ, TStg
- 55
-
RthJC
RthCS
MAX.
UNITS
-
175
°C
-
0.38
-
-
0.19
-
0.10
-
-
68
2.4
-
Mounting torque
35.4 (4)
-
53.1 (6)
Mounting torque center hole
30 (3.4)
-
40 (4.6)
Terminal torque
30 (3.4)
-
44.2 (5)
Vertical pull
-
-
80
2" lever pull
-
-
35
°C/W
g
oz.
lbf ⋅ in
(N ⋅ m)
lbf ⋅ in
Revision: 09-May-17
Document Number: 94154
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward
Current (A)
TJ = 175 °C
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
VFM - Forward Voltage Drop (V)
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
0.1
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 09-May-17
Document Number: 94154
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-201CNQ045PbF
Vishay Semiconductors
180
90
170
80
Average Power Loss (W)
Allowable Case Temperature (°C)
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DC
160
150
140
130
Square wave (D = 0.50)
80 % rated VR applied
120
110
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
70
60
50
RMS limit
40
30
DC
20
10
100
See note (1)
0
90
0
20
40
60
80
100
120
140
0
160
25
50
75
100
125
150
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
10 000
1000
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 09-May-17
Document Number: 94154
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
1
C
N
Q
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Average current rating (x 10)
3
-
Product silicon identification
4
-
C = circuit configuration
5
-
N = not isolated
6
-
Q = Schottky rectifier diode
7
-
Voltage rating (045 = 45 V)
8
-
Lead (Pb)-free
045 PbF
7
8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 09-May-17
Document Number: 94154
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-244
DIMENSIONS in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
40 (1.57)
80 (3.15)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
Ø 7.2 (Ø 0.28)
(2 places)
3
1
2
21 (0.82)
20 (0.78)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2023
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Document Number: 91000
