VS-201CNQ050PBF

VS-201CNQ050PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level TO-244 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 200 A VR 50 V Package TO-244 Circuit configuration Two diodes common cathode The VS-201CNQ050PbF center tap Schottky rectifier module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 200 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 100 Apk, TJ = 125 °C (per leg) TJ Range 50 V 16 000 A 0.58 V -55 to +175 °C VOLTAGE RATINGS SYMBOL PARAMETER 201CNQ050PbF UNITS 50 V TEST CONDITIONS VALUES VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL UNITS 200 per device IF(AV) 50 % duty cycle at TC = 146 °C, rectangular waveform per leg A 100 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 17 A, L = 1 mH 145 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 20 A Repetitive avalanche current per leg 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 16 000 A 2000 Revision: 09-May-17 Document Number: 93991 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-201CNQ050PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 100 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 100 A IRM (1) 0.81 0.58 TJ = 125 °C V 0.71 TJ = 25 °C 10 VR = Rated VR mA TJ = 125 °C 90 CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Maximum junction capacitance per leg UNITS 0.67 TJ = 25 °C 200 A 200 A Maximum reverse leakage current per leg See fig. 2 VALUES Rated VR 5200 pF 7.0 nH 10 000 V/µs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, case to heatsink Weight per leg per module SYMBOL MIN. TJ, TStg - 55 - - 0.19 - 0.10 - RthJC RthCS - TYP. MAX. UNITS - 175 °C - 0.38 68 2.4 - Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) Vertical pull - - 80 2" lever pull - - 35 °C/W g oz. lbf ⋅ in (N ⋅ m) lbf ⋅ in Revision: 09-May-17 Document Number: 93991 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-201CNQ050PbF www.vishay.com Vishay Semiconductors 10 000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1000 TJ = 175 °C 100 10 TJ = 125 °C 1 TJ = 50 °C 0.1 0.01 TJ = 25 °C 0.001 1 0.0001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 0.1 0.01 0.001 0.00001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 09-May-17 Document Number: 93991 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-201CNQ050PbF Vishay Semiconductors 180 90 170 80 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 160 150 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 70 60 50 RMS limit 40 30 DC 20 10 100 See note (1) 0 90 0 20 40 60 80 100 120 140 0 160 25 50 75 100 125 150 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) 10 000 1000 100 10 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 09-May-17 Document Number: 93991 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-201CNQ050PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 1 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = circuit configuration 5 - N = not isolated 6 - Q = Schottky rectifier diode 7 - Voltage rating (050 = 50 V) 8 - Lead (Pb)-free 050 PbF 7 8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 09-May-17 Document Number: 93991 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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