VS-209CNQ135PBF

VS-209CNQ...PbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 200 A FEATURES Lug terminal anode 1 • 175 °C TJ operation Lug terminal anode 2 • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 200 A VR 135 V, 150 V Package TO-244 Circuit configuration Two diodes common cathode The VS-209CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 100 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 200 A 135/150 V 10 000 A 0.71 V -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-209CNQ135PbF VS-209CNQ150PbF UNITS 135 150 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per leg IF(AV) See fig. 5 per device TEST CONDITIONS 50 % duty cycle at TC = 131 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 100 200 A 10 000 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A 10 ms sine or 6 ms rect. pulse 1200 Revision: 09-May-17 Document Number: 94156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-209CNQ...PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 100 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 100 A IRM (1) UNITS 1.06 TJ = 25 °C 200 A 1.33 V 0.74 TJ = 125 °C 200 A Maximum reverse leakage current per leg See fig. 2 VALUES 0.88 TJ = 25 °C 3 VR = Rated VR mA TJ = 125 °C 45 Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated VR 3000 pF 7.0 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. TJ, TStg -55 - Maximum junction and storage temperature range Thermal resistance, junction to case per leg per module Thermal resistance, case to heatsink RthJC RthCS Weight MAX. UNITS - 175 °C - 0.38 - - 0.19 - 0.10 - 68 - g - 2.4 oz. Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) Vertical pull - - 80 2" lever pull - - 35 1000 1000 lbf in (N m) lbf in TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) °C/W 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 0.5 1.0 1.5 2.0 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 30 60 90 120 150 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-May-17 Document Number: 94156 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-209CNQ...PbF Series www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 0 30 60 90 120 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 120 180 160 Average Power Loss (W) Allowable Case Temperature (°C) 200 DC 140 120 Square wave (D = 0.50) 80 % rated VR applied 100 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 80 60 RMS limit 40 DC 20 See note (1) 0 60 0 20 40 60 80 100 120 140 160 0 30 60 90 120 150 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-May-17 Document Number: 94156 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-209CNQ...PbF Series www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 10 000 1000 At any rated load condition and with rated VRRM applied following surge 100 100 10 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR ORDERING INFORMATION TABLE Device code VS- 20 9 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = circuit configuration 5 - N = not isolated 6 - Q = Schottky rectifier diode 7 - Voltage ratings 8 - Lead (Pb)-free 150 PbF 7 8 135 = 135 V 150 = 150 V LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 09-May-17 Document Number: 94156 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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