VS-20CTH03FP-N3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
1
• Low leakage current
2
3
• Fully isolated package (VINS = 2500 VRMS)
3L TO-220 FullPAK
• UL pending
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
Common
cathode
3
Anode
1
Anode
DESCRIPTION / APPLICATIONS
VS-20CTH03FP-N3
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
PRIMARY CHARACTERISTICS
IF(AV)
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
2 x 10 A
VR
300 V
VF at IF
0.85 V
trr typ.
See Recovery table
TJ max.
175 °C
Package
3L TO-220 FullPAK
Circuit configuration
Common cathode
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VALUES
UNITS
300
V
VRRM
per diode
Average rectified forward current
IF(AV)
per device
Non-repetitive peak surge current
IFSM
Operating junction and storage temperatures
TC = 135 °C
10
TJ = 25 °C
120
20
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
300
-
-
IF = 10 A
-
1.05
1.25
0.95
IR = 100 μA
IF = 10 A, TJ = 125 °C
-
0.85
VR = VR rated
-
-
20
TJ = 125 °C, VR = VR rated
-
6
200
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 300 V
-
30
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 11-Dec-2018
Document Number: 96432
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VS-20CTH03FP-N3
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DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
35
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
-
30
TJ = 25 °C
-
31
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
IF = 10 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 25 °C
TJ = 125 °C
Qrr
-
42
-
-
2.4
-
-
5.6
-
UNITS
ns
A
TJ = 25 °C
-
36
-
TJ = 125 °C
-
120
-
MIN.
TYP.
MAX.
UNITS
-65
-
175
°C
-
-
3.9
°C/W
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction-to-case per
diode
RthJC
Marking device
Mounting surface, flat, smooth,
and greased
Case style 3L TO-220 FullPAK
20CTH03FP
100
100
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
TJ = 175 °C
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
50
100
150
200
250
300
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 11-Dec-2018
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CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
100
50
150
200
250
300
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
20
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
DC
150
140
130
120
Square wave (D = 0.50)
Rated VR applied
110
See note (1)
100
16
RMS limit
12
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
8
4
DC
0
0
2
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
2
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 11-Dec-2018
Document Number: 96432
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20CTH03FP-N3
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Vishay Semiconductors
1000
100
IF = 10 A
IF = 10 A
TJ = 125 °C
Qrr (nC)
trr (ns)
TJ = 125 °C
TJ = 25 °C
100
TJ = 25 °C
VR = 200 V
VR = 200 V
10
100
10
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 11-Dec-2018
Document Number: 96432
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20CTH03FP-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
C
T
H
03
FP
-N3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
C = common cathode
4
-
T = TO-220, D2PAK (TO-263AB)
5
-
H = hyperfast recovery
6
-
Voltage rating (03 = 300 V)
7
-
FP = 3L TO-220 FullPAK
8
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-20CTH03FP-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96155
Part marking information
www.vishay.com/doc?95456
SPICE model
www.vishay.com/doc?96584
Revision: 11-Dec-2018
Document Number: 96432
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
3L TO-220 FullPAK
DIMENSIONS in millimeters
3.40
Hole Ø 3.10
10.6
10.0
3.7
3.2
2.80
2.44
7.31
6.50
16.0
15.8
Mold flash bleeding
3.3
3.1
Exposed Cu
13.56
12.90
2.54 TYP.
0.61
0.38
0.9
0.7
2.85
2.65
2.54 TYP.
1.20
1.47
1.30
1.05
Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
5° ± 0.5°
Notes
(1) All dimensions are in mm
(2) Package body size exclude mold flash and burrs. Moldflash should be less than 6 mils
Revision: 06-Jul-17
Document Number: 96155
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2019
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Document Number: 91000
