VS-20CTH03STRL-M3

VS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2 1 • 175 °C operating junction temperature 1 3 D2PAK (TO-263AB) 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C TO-262AA 3 • Meets JESD 201, class 1A whisker test Base common cathode 2 Base common cathode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS 2 3 1 Common Anode cathode Anode 2 3 1 Common Anode cathode Anode VS-20CTH03S-M3 VS-20CTH03-1-M3 Vishay Semiconductors 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VR 300 V VF at IF 0.85 V trr max. 35 ns MECHANICAL DATA Case: D2PAK (TO-263AB), TO-262AA Molding compound meets UL 94 V-0 flammability rating TJ max. 175 °C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode Terminal: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current TEST CONDITIONS MAX. UNITS 300 V VRRM per diode per device Non-repetitive peak surge current IF(AV) IFSM Operating junction and storage temperatures TC = 160 °C 10 TJ = 25 °C 120 20 TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS TEST CONDITIONS MIN. TYP. MAX. 300 - - IF = 10 A - 1.05 1.25 IF = 10 A, TJ = 125 °C - 0.85 0.95 IR = 100 μA UNITS V VR = VR rated - - 20 TJ = 125 °C, VR = VR rated - 6 200 VR = 300 V - 30 - pF Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 18-Nov-2020 Document Number: 96386 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C - 31 - TJ = 125 °C UNITS ns - 42 - - 2.4 - - 5.6 - TJ = 25 °C - 36 - TJ = 125 °C - 120 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case per diode RthJC - - 1.5 °C/W Thermal resistance, junction to ambient RthJA - - 70 °C/W Peak recovery current IRRM Reverse recovery charge IF = 10 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C TJ = 125 °C Qrr A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Marking device - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Case style D2PAK (TO-263AB) 20CTH03S Case style TO-262AA 20CTH03-1 100 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 1 0.4 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 250 300 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-Nov-2020 Document Number: 96386 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 50 100 150 200 250 300 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 20 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC 160 Square wave (D = 0.50) Rated VR applied 150 16 RMS limit 12 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 8 4 DC See note (1) 140 0 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 18-Nov-2020 Document Number: 96386 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors 100 1000 IF = 10 A IF = 10 A Qrr (nC) trr (ns) TJ = 125 °C TJ = 25 °C TJ = 125 °C 100 TJ = 25 °C VR = 200 V VR = 200 V 10 100 10 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 18-Nov-2020 Document Number: 96386 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 C T H 03 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 A) 3 - C = common cathode 4 - T = TO-220, D2PAK (TO-263AB) 5 - H = hyperfast rectifier 6 - Voltage rating (03 = 300 V) 7 - S = D2PAK (TO-263AB) TRL -M3 8 9 -1 = TO-262AA 8 - None = tube (50 pieces) TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package) TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 (TO-263AB) www.vishay.com/doc?96424 D2PAK www.vishay.com/doc?96583 Revision: 18-Nov-2020 Document Number: 96386 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262AA DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 2 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC® TO-262 except A1 (max.), b (min., max.), b1 (min.), b2 (max.), c (min.), c1(min.), c2 (max.), D (min.), E (max.), L1 (max.), L2 (min., max.) Revision: 30-Nov-17 Document Number: 96165 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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