VS-20CTQ150-M3

VS-20CTQ150-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A FEATURES Base 2 common cathode • 175 °C TJ operation • Low forward voltage drop • High frequency operation Anode 3L TO-220AB Anode 2 1 Common 3 cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS IF(AV) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 x 10 A VR 150 V VF at IF 0.66 V IRM max. 5 mA at 125 °C TJ 175 °C EAS 2.45 mJ Package 3L TO-220AB Circuit configuration Common cathode DESCRIPTION The center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 20 A 150 V IFSM tp = 5 μs sine 1030 A VF 10 Apk, TJ = 125 °C (per leg) 0.66 V TJ Range -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-20CTQ150-M3 UNITS 150 V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current, see fig. 5 TEST CONDITIONS VALUES UNITS 10 per leg IF(AV) 50 % duty cycle at TC = 154 °C, rectangular waveform A 20 per device 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 1030 Maximum peak one cycle non-repetitive surge current per leg, see fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.7 A, L = 10 mH 2.45 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.7 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse 180 A Revision: 14-Aug-17 Document Number: 96246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTQ150-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 10 A Maximum forward voltage drop per leg  See fig. 1 VFM (1) TJ = 25 °C 20 A 10 A TJ = 125 °C 20 A Maximum reverse leakage current per leg See fig. 2 IRM Typical junction capacitance per leg CT Typical series inductance per leg LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C TYP. MAX. 0.80 0.88 UNITS 0.90 1.0 0.63 0.66 0.73 0.77 3.0 25 μA 2.7 5.0 mA - 280 pF V Measured lead to lead 5 mm from package body - 8.0 nH Rated VR - 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case per leg - 55 to 175 °C DC operation 1.0 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth, and greased Approximate weight Marking device UNITS 2.0 RthJC Maximum thermal resistance,  junction to case per package Mounting torque VALUES °C/W 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf ·cm (lbf ·in) Case style 3L TO-220AB 20CTQ150 Revision: 14-Aug-17 Document Number: 96246 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTQ150-M3 www.vishay.com Vishay Semiconductors 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.2 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C 0.0001 0.6 0.4 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 20 40 60 80 100 120 140 160 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 40 80 160 120 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 14-Aug-17 Document Number: 96246 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTQ150-M3 Vishay Semiconductors 10 180 170 DC 160 150 Square wave (D = 0.50) 80 % rated VR applied 140 See note (1) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 9 Allowable Power Loss (W) Allowable Lead Temperature (°C) www.vishay.com 8 7 6 5 RMS limit 4 3 DC 2 1 130 0 0 2 4 6 8 10 12 16 14 0 3 6 9 12 15 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 14-Aug-17 Document Number: 96246 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20CTQ150-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 C T Q 150 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: 4 - C = Common cathode Package: T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings (150 = 150 A) 7 - Environmental digit -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20CTQ150-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 14-Aug-17 Document Number: 96246 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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